2N3449 - описание и поиск аналогов

Order this document MOTOROLA by 2N3442/D SEMICONDUCTOR TECHNICAL DATA 2N3442 High-Power Industrial Transistors 10 AMPERE NPN silicon power transistor designed for applications in industrial and commercial POWER TRANSISTOR equipment including high fidelity audio amplifiers, series and shunt regulators and NPN SILICON power switches. 140 VOLTS Collector Emitter Sustaining Vol

2N3439 2N3440 SILICON NPN TRANSISTORS STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR DESCRIPTION The 2N3439 and 2N3440 are silicon epitaxial planar NPN transistors in jedec TO-39 metal case designed for use in consumer and industrial line-operated applications. These devices are particularly suited as drivers in high-voltage low current inverters, switching and seri

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2N3442 High-Power Industrial Transistors NPN silicon power transistor designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches. http //onsemi.com Features 10 AMPERE Collector -Emitter Sustaining Voltage - VCEO(sus) = 140 Vdc (Min) POWER TRANSISTOR Excellent Second Breakdown Capabi

2N3442 High-Power Industrial Transistors NPN silicon power transistor designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches. http //onsemi.com Features 10 AMPERE Collector -Emitter Sustaining Voltage - VCEO(sus) = 140 Vdc (Min) POWER TRANSISTOR Excellent Second Breakdown Capabi

2N3442 2N4347 HIGH POWER INDUSTRIAL TRANSISTORS HIGH POWER INDUSTRIAL TRANSISTORS NPN silicon transistors designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunts regulators and power switches. Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0 Vdc (Max) @ IC = 2.0 Adc 2N4347 Collector-Emitter Susta

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SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3439C3A / 2N3440C3A 2N3439C3B / 2N3440C3B 2N3439C3C / 2N3440C3C High Voltage Hermetic Ceramic Surface Mount Package. Variant B to MIL-PRF-19500/368 outline Ideally suited for drivers in high-voltage low current inverters, switching and series regulators. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA =

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3439C3A / 2N3440C3A 2N3439C3B / 2N3440C3B 2N3439C3C / 2N3440C3C High Voltage Hermetic Ceramic Surface Mount Package. Variant B to MIL-PRF-19500/368 outline Ideally suited for drivers in high-voltage low current inverters, switching and series regulators. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA =

2N3441 SEME LAB MECHANICAL DATA Dimensions in mm (inches) MEDIUM POWER SILICON NPN 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. TRANSISTOR 3.61 (0.142) max. 3.86 (0.145) rad. FEATURES Low Saturation Voltages High Voltage Ratings Maximum Safe Operating Area Curves for DC and Pulse Operation. 1.27 (0.050) 1.91 (0.750) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360)

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3439C3A / 2N3440C3A 2N3439C3B / 2N3440C3B 2N3439C3C / 2N3440C3C High Voltage Hermetic Ceramic Surface Mount Package. Variant B to MIL-PRF-19500/368 outline Ideally suited for drivers in high-voltage low current inverters, switching and series regulators. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA =

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3439CSM4 / 2N3439CSM4R 2N3440CSM4 / 2N3440CSM4R High Voltage Hermetic Ceramic Surface Mount Package. Ideally suited for drivers in high-voltage low current inverters, switching and series regulators. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) 2N3439 2N3440 Symbols Parame

2N3447 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 60V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 7.5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

2N3445 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 60V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 7.5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

2N3439DCSM 2N3440DCSM HIGH VOLTAGE, MEDIUM POWER, NPN DUAL TRANSISTOR IN A HERMETICALLY SEALED MECHANICAL DATA CERAMIC SURFACE MOUNT PACKAGE Dimensions in mm (inches) FOR HIGH RELIABILITY APPLICATIONS FEATURES 2.29 0.20 1.65 0.13 1.40 0.15 (0.055 0.006) (0.09 0.008) (0.065 0.005) DUAL SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2 3 HERMETIC CERAMIC SURFACE

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N3445 DESCRIPTION With TO-3 package Excellent safe operating area APPLICATIONS Designed for medium-switching and amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALU

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N3446 DESCRIPTION With TO-3 package Excellent safe operating area APPLICATIONS Designed for medium-switching and amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALU

2N3439 thru 2N3440 Qualified Levels NPN LOW POWER SILICON JAN, JANTX, Available on TRANSISTOR JANTXV and JANS commercial versions Qualified per MIL-PRF-19500/368 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage. These devices are also available in TO-39 and low profile U4 and UA packaging. Microsemi also offers nume

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Tel +353 (0) 65 6840044 Fax +353 (0) 65 6822298 Website http //www.microsemi.com NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/368 DEVICES LEVELS JAN 2N3439 * 2N3440 JANTX 2N3439L * 2N3440L JANTXV

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3448 DESCRIPTION With TO-3 package Excellent Safe Operating Area APPLICATIONS Designed for medium-switching and amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER CON

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3441 DESCRIPTION With TO-66 package Continuous collector current-IC=3A Power dissipation -PD=25W @TC=25 APPLICATIONS For use in general-purpose switching and Linear amplifier applications such as Driver for high power outputs Series and shunt regulators Audio and servo amplifiers

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3442 DESCRIPTION With TO-3 package Excellent safe operating area APPLICATIONS For industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (T

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3447 DESCRIPTION With TO-3 package Excellent safe operating area APPLICATIONS Designed for medium-switching and amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER CON

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3445 DESCRIPTION With TO-3 package Excellent safe operating area APPLICATIONS Designed for medium-switching and amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDI

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3446 DESCRIPTION With TO-3 package Excellent safe operating area APPLICATIONS Designed for medium-switching and amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDI