D45H10. Аналоги и основные параметры
Наименование производителя: D45H10
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 50 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 10 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 20 MHz
Ёмкость коллекторного перехода (Cc): 400 pf
Статический коэффициент передачи тока (hFE): 20
Корпус транзистора: TOP66
Аналоги (замена) для D45H10
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D45H10 даташит
..1. Size:214K inchange semiconductor
d45h10.pdf 
isc Silicon PNP Power Transistors D45H10 DESCRIPTION Low Saturation Voltage Fast Switching Speeds Complement to Type D44H10 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general pourpose power amplification and switching such as output or driver stages in applications such as switching regulators,converters and p
9.1. Size:103K motorola
d44h d45h d45h11 d44h11.pdf 
Order this document MOTOROLA by D44H/D SEMICONDUCTOR TECHNICAL DATA NPN D44H Series * Complementary Silicon Power PNP D45H Series * Transistors . . . for general purpose power amplification and switching such as output or driver *Motorola Preferred Device stages in applications such as switching regulators, converters and power amplifiers. Low Collector Emitter Saturation V
9.2. Size:192K motorola
mjd44h11 mjd45h11.pdf 
Order this document MOTOROLA by MJD44H11/D SEMICONDUCTOR TECHNICAL DATA NPN * MJD44H11 Complementary Power PNP MJD45H11 * Transistors DPAK For Surface Mount Applications *Motorola Preferred Device . . . for general purpose power and switching such as output or driver stages in SILICON applications such as switching regulators, converters, and power amplifiers. POWER TRANSISTORS
9.3. Size:174K st
d44h11fp d45h11fp.pdf 
D44H11FP D45H11FP Complementary power transistors . Features Low collector-emitter saturation voltage Fast switching speed Applications Power amplifier 3 2 1 Switching circuits TO-220FP Description The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for Figure 1. Internal schematic diagram general purpose linear an
9.4. Size:49K st
d45h5 d45h8 d45h11.pdf 
D45H5 D45H8 D45H11 PNP SILICON POWER TRANSISTORS STM PREFERRED SALESTYPES LOW COLLECTOR-EMITTER SATURATION VOLTAGE FAST SWITCHING SPEED APPLICATIONS GENERAL PURPOSE SWITCHING GENERAL PURPOSE SWITCHING AND AMPLIFIER 3 2 1 DESCRIPTION The D45H5, D45H8 and D45H11 are silicon TO-220 multiepitaxial planar PNP transistors mounted in Jedec TO-220 plastic package. They
9.5. Size:569K st
mjd44h11t4a mjd45h11t4a.pdf 
MJD44H11T4-A MJD45H11T4-A Complementary power transistors . Features The devices are qualified for automotive application TAB2 Low collector-emitter saturation voltage Fast switching speed 3 Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4") 1 DPAK Applications TO-252 Power amplifier Switching circuits Figure 1. Internal sche
9.6. Size:210K st
mjd45h11t4-a.pdf 
MJD44H11T4-A MJD45H11T4-A Complementary power transistors . Features The devices are qualified for automotive application TAB2 Low collector-emitter saturation voltage Fast switching speed 3 Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4") 1 DPAK Applications TO-252 Power amplifier Switching circuits Figure 1. Internal sche
9.7. Size:182K st
d44h8 d44h11 d45h8 d45h11.pdf 
D44H8 - D44H11 D45H8 - D45H11 Complementary power transistors . Features Low collector-emitter saturation voltage TAB Fast switching speed Applications Power amplifier 3 2 Switching circuits 1 TO-220 Description The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for Figure 1. Internal schematic diagram general p
9.8. Size:180K st
d44h8 d44h11 d45h8-d45h11.pdf 
D44H8 - D44H11 D45H8 - D45H11 Complementary power transistors . Features Low collector-emitter saturation voltage TAB Fast switching speed Applications Power amplifier 3 2 Switching circuits 1 TO-220 Description The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for Figure 1. Internal schematic diagram general p
9.9. Size:395K st
mjd44h11 mjd45h11.pdf 
MJD44H11, MJD45H11 Complementary power transistors Datasheet - production data . Features Low collector-emitter saturation voltage TAB Fast switching speed 2 Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4") 3 1 Applications DPAK TO-252 Power amplifier Switching circuits Description Figure 1. Internal schematic diagram These d
9.10. Size:158K fairchild semi
mjd45h11.pdf 
April 2010 MJD45H11 PNP Epitaxial Silicon Transistor Applications General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications Features Load Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK -I Suffix) Electrically Similar to Popular MJE45H D-PAK I-PAK 11 Fast Switching Spe
9.11. Size:236K nxp
mjd45h11.pdf 
MJD45H11 80 V, 8 A PNP high power bipolar transistor 12 September 2019 Product data sheet 1. General description PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement MJD44H11 2. Features and benefits High thermal power dissipation capability High energy efficiency due to less heat generation Elect
9.12. Size:286K onsemi
mjd45h11.pdf 
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
9.13. Size:148K onsemi
mjd45h11t4g.pdf 
MJD44H11, NJVMJD44H11 (NPN) MJD45H11, NJVMJD45H11 (PNP) Complementary Power http //onsemi.com Transistors DPAK For Surface Mount Applications SILICON POWER TRANSISTORS Designed for general purpose power and switching such as output or 8 AMPERES driver stages in applications such as switching regulators, converters, 80 VOLTS, 20 WATTS and power amplifiers. Features MARKING Le
9.14. Size:148K onsemi
mjd45h11-1g.pdf 
MJD44H11, NJVMJD44H11 (NPN) MJD45H11, NJVMJD45H11 (PNP) Complementary Power http //onsemi.com Transistors DPAK For Surface Mount Applications SILICON POWER TRANSISTORS Designed for general purpose power and switching such as output or 8 AMPERES driver stages in applications such as switching regulators, converters, 80 VOLTS, 20 WATTS and power amplifiers. Features MARKING Le
9.15. Size:102K onsemi
d44h8 d45h8 d44h11 d45h11.pdf 
D44H Series (NPN), D45H Series (PNP) Complementary Silicon Power Transistors These series of plastic, silicon NPN and PNP power transistors can be used as general purpose power amplification and switching such as http //onsemi.com output or driver stages in applications such as switching regulators, converters and power amplifiers. 10 AMP COMPLEMENTARY SILICON POWER Features Lo
9.16. Size:148K onsemi
mjd45h11g.pdf 
MJD44H11, NJVMJD44H11 (NPN) MJD45H11, NJVMJD45H11 (PNP) Complementary Power http //onsemi.com Transistors DPAK For Surface Mount Applications SILICON POWER TRANSISTORS Designed for general purpose power and switching such as output or 8 AMPERES driver stages in applications such as switching regulators, converters, 80 VOLTS, 20 WATTS and power amplifiers. Features MARKING Le
9.17. Size:148K onsemi
njvmjd44h11 njvmjd45h11.pdf 
MJD44H11, NJVMJD44H11 (NPN) MJD45H11, NJVMJD45H11 (PNP) Complementary Power http //onsemi.com Transistors DPAK For Surface Mount Applications SILICON POWER TRANSISTORS Designed for general purpose power and switching such as output or 8 AMPERES driver stages in applications such as switching regulators, converters, 80 VOLTS, 20 WATTS and power amplifiers. Features MARKING Le
9.18. Size:148K onsemi
mjd45h11rlg.pdf 
MJD44H11, NJVMJD44H11 (NPN) MJD45H11, NJVMJD45H11 (PNP) Complementary Power http //onsemi.com Transistors DPAK For Surface Mount Applications SILICON POWER TRANSISTORS Designed for general purpose power and switching such as output or 8 AMPERES driver stages in applications such as switching regulators, converters, 80 VOLTS, 20 WATTS and power amplifiers. Features MARKING Le
9.19. Size:114K onsemi
d45h11g.pdf 
D44H Series (NPN), D45H Series (PNP) Preferred Devices Complementary Silicon Power Transistors These series of plastic, silicon NPN and PNP power transistors can be used as general purpose power amplification and switching such http //onsemi.com as output or driver stages in applications such as switching regulators, converters and power amplifiers. 10 AMP COMPLEMENTARY Features SI
9.20. Size:126K onsemi
mjd44h11 mjd45h11.pdf 
MJD44H11 (NPN), MJD45H11 (PNP) Complementary Power Transistors DPAK for Surface Mount Applications http //onsemi.com Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, SILICON and power amplifiers. POWER TRANSISTORS Features 8 AMPERES Lead Formed for Surface Mount Application in Plastic Slee
9.22. Size:247K cystek
d45h11e3.pdf 
Spec. No. C607E3 Issued Date 2007.03.07 CYStech Electronics Corp. Revised Date 2014.05.05 Page No. 1/5 Low Vcesat PNP Epitaxial Planar Transistor D45H11E3 Features Low VCE(sat) High BVCEO Excellent current gain characteristics Pb-free lead plating package Symbol Outline D45H11E3 TO-220 B Base C Collector E Emitter B C E Ordering
9.23. Size:267K cystek
d45h11fp.pdf 
Spec. No. C607FP Issued Date 2008.04.07 CYStech Electronics Corp. Revised Date 2013.10.29 Page No. 1/6 Low Vcesat PNP Epitaxial Planar Transistor D45H11FP Features Low VCE(sat) High BVCEO Excellent current gain characteristics Pb-free lead plating package Symbol Outline D45H11FP TO-220FP TO-220FP (C forming) (S forming) B Base C Collec
9.25. Size:243K inchange semiconductor
mjd45h11.pdf 
isc Silicon PNP Power Transistors MJD45H11 DESCRIPTION Low Collector-Emitter Saturation Voltage V )= 1.0V(Max)@ I = 8A CE(sat C Fast Switching Speeds Complement to Type MJD44H11 DPAK for Surface Mount Applications Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general pourpose power amplification and switchi
9.26. Size:187K inchange semiconductor
d45h11.pdf 
INCHANGE Semiconductor isc Silicon PNP Power Transistors D45H11 DESCRIPTION Low Collector-Emitter Saturation Voltage V )= 1.0V(Max)@ I = 8A CE(sat C Fast Switching Speeds Complement to Type D44H11 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general pourpose power amplification and switching such as output o
Другие транзисторы: D45D4, D45D5, D45D6, D45E, D45E1, D45E2, D45E3, D45H1, 2SD1047, D45H11, D45H12, D45H2, D45H3, D45H4, D45H5, D45H6, D45H7
