Биполярный транзистор 2N349 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2N349
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.75 W
Макcимально допустимое напряжение коллектор-база (Ucb): 125 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 125 V
Макcимальный постоянный ток коллектора (Ic): 0.04 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 2 MHz
Статический коэффициент передачи тока (hfe): 25
Корпус транзистора: TO31
2N349 Datasheet (PDF)
2n3496 7.pdf
Continental Device India LimitedQAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR SWITCHING TRANSISTORS 2N34962N3497TO-18Metal Can PackageGeneral Purpose Transistors for Switching and Linear Applications. DC Amplilfier & Driver For Industrial ApplicationsABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL 2N3496 2N3497
2n3498 99 2n3500 01.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR RF TRANSISTORS 2N3498, 2N3499, 2N3500, 2N3501TO-39Metal Can PackageABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL TEST CONDITION 2N3498 2N3500 UNITS2N3499 2N3501VCEOCollector Emitter Voltage 100 150 VVCBOCollector Base Voltage 100
2n3498 2n3499 2n3450 2n3451.pdf
TECHNICAL DATA NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/366 Devices Qualified Level JAN 2N3498 2N3499 2N3500 2N3501 JANTX 2N3498L 2N3499L 2N3500L 2N3501L JANTXV JANS MAXIMUM RATINGS 2N3498* 2N3500* Ratings Symbol 2N3499* 2N3501* Unit Collector-Emitter Voltage 100 150 Vdc VCEO Collector-Base Voltage 100 150 Vdc VCBO Emitter-Base Voltage 6.0 6.0 Vdc VE
2n3498l.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/366 DEVICES LEVELS JANSM 3K Rads (Si) 2N3498 2N3499 2N3500 2N3501JANSD 10K Rads (Si) 2N3498L 2N3499L 2N3500L 2N3501LJANSP 30K Rads (Si)
2n3499l.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/366 DEVICES LEVELS JANSM 3K Rads (Si) 2N3498 2N3499 2N3500 2N3501JANSD 10K Rads (Si) 2N3498L 2N3499L 2N3500L 2N3501LJANSP 30K Rads (Si)
2n3497.pdf
Data Sheet No. 2N3498Generic Part Number:Type 2N34982N3498Geometry 5620Polarity NPNREF: MIL-PRF-19500/366Qual Level: JAN - JANTXVFeatures: General-purpose silicon transistorfor switching and amplifier appli-cations. Housed in TO-39 case. Also available in chip form usingthe 5620 chip geometry. The Min and Max limits shown areper MIL-PRF-19500/366 whic
Другие транзисторы... 2N3485A , 2N3486 , 2N3486A , 2N3486CSM , 2N3487 , 2N3488 , 2N3489 , 2N348A , 13001-A , 2N3490 , 2N3491 , 2N3492 , 2N3493 , 2N3494 , 2N3494S , 2N3495 , 2N3495S .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050