Биполярный транзистор DRAF144E - описание производителя. Основные параметры. Даташиты.
Наименование производителя: DRAF144E
Маркировка: LL
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 47 kOhm
Встроенный резистор цепи смещения R2 = 47 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 80
Корпус транзистора: ML3-N4-B
DRAF144E Datasheet (PDF)
draf144e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRAF144ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCF144EDRA3144E in ML3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction ML3-N4-B Eco-friendly Halogen-free packagePac
draf144t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRAF144TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCF144TDRA3144T in ML3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) ML3-N4-B Contributes to miniaturization of
draf143e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRAF143ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCF143EDRA3143E in ML3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction ML3-N4-B Eco-friendly Halogen-free packagePac
draf143x.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRAF143XSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCF143XDRA3143X in ML3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction ML3-N4-B Eco-friendly Halogen-free packagePac
draf143z.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRAF143ZSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCF143ZDRA3143Z in ML3 type package Features Package High forward current transfer ratio hFE Code Low collector-emitter saturation voltage VCE(sat) ML3-N4-B Contributes to miniaturization of sets, mount area reductio
draf143t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRAF143TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCF143TDRA3143T in ML3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) ML3-N4-B Contributes to miniaturization of
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050
