DTA123JSA datasheet, аналоги, основные параметры
Наименование производителя: DTA123JSA
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 2.2 kOhm
Встроенный резистор цепи смещения R2 = 47 kOhm
Соотношение сопротивлений R1/R2 = 0.047
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.3 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 140 MHz
Статический коэффициент передачи тока (hFE): 80
Корпус транзистора: SC72
Аналоги (замена) для DTA123JSA
- подборⓘ биполярного транзистора по параметрам
DTA123JSA даташит
..1. Size:68K rohm
dta123je dta123jka dta123jsa.pdf 
Transistors Digital transistors (built-in resistors) DTA123JE / DTA123JUA / DTA123JKA / DTA123JSA FFeatures FExternal dimensions (Units mm) 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin- film resistors with complete isola- tion to allow positive bi
..2. Size:544K htsemi
dta123jca dta123je dta123jka dta123jsa dta123jua.pdf 
DTA123JKA/DTA123JCA/DTA123JSA DTA123JE/DTA123JUA/ TRANSISTOR(PNP) Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost complet
6.1. Size:141K cystek
dta123js3.pdf 
Spec. No. C261S3 Issued Date 2003.07.21 CYStech Electronics Corp. Revised Date Page No. 1/3 PNP Digital Transistors (Built-in Resistors) DTA123JS3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors with complet
7.1. Size:54K motorola
pdta123jef 1.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA123JEF PNP resistor-equipped transistor 1999 Apr 20 Preliminary specification Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA123JEF FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 k respectively) 3 handbook, halfpage 3 Simplification of circuit design R1 1 Red
7.2. Size:57K motorola
pdta123je 2.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA123JE PNP resistor-equipped transistor Product specification 1998 Nov 25 Supersedes data of 1997 Dec 15 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA123JE FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 k respectively) handbook, halfpage 3 3 Simplification of circuit d
7.3. Size:56K motorola
pdta123jt 1.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTA123JT PNP resistor-equipped transistor 1999 May 27 Product specification Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA123JT FEATURES Built-in bias resistors (typ 2.2 k and 47 k respectively) 3 handbook, 4 columns Simplification of circuit design 3 Reduces number
7.4. Size:54K philips
pdta123jef 1.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA123JEF PNP resistor-equipped transistor 1999 Apr 20 Preliminary specification Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA123JEF FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 k respectively) 3 handbook, halfpage 3 Simplification of circuit design R1 1 Red
7.5. Size:175K philips
pdta123j series.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET PDTA123J series PNP resistor-equipped transistors; R1 = 2.2 k , R2 = 47 k Product data sheet 2004 Aug 02 Supersedes data of 2003 Apr 14 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; PDTA123J series R1 = 2.2 k , R2 = 47 k FEATURES QUICK REFERENCE DATA Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNIT
7.6. Size:57K philips
pdta123je 2.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA123JE PNP resistor-equipped transistor Product specification 1998 Nov 25 Supersedes data of 1997 Dec 15 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA123JE FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 k respectively) handbook, halfpage 3 3 Simplification of circuit d
7.7. Size:56K philips
pdta123jt 1.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTA123JT PNP resistor-equipped transistor 1999 May 27 Product specification Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA123JT FEATURES Built-in bias resistors (typ 2.2 k and 47 k respectively) 3 handbook, 4 columns Simplification of circuit design 3 Reduces number
7.8. Size:2790K nxp
pdta143xqa pdta123jqa pdta143zqa pdta114yqa.pdf 
PDTA143X/123J/143Z/114YQA series 50 V, 100 mA PNP resistor-equipped transistors Rev. 1 30 October 2015 Product data sheet 1. Product profile 1.1 General description 100 mA PNP Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Table 1. Product overview Type
7.9. Size:1050K nxp
pdta123je pdta123jm pdta123jt pdta123ju.pdf 
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
7.10. Size:69K rohm
dta123je-jua-jka 132 132 e32 sot416 323 346.pdf 
Transistors Digital transistors (built-in resistors) DTA123JE / DTA123JUA / DTA123JKA / DTA123JSA FFeatures FExternal dimensions (Units mm) 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin- film resistors with complete isola- tion to allow positive bi
7.11. Size:1531K rohm
dta123jefra dta123jkafra dta123jmfha dta123juafra.pdf 
DTA123J series Datasheet PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) lOutline l Parameter Value VMT3 EMT3F VCC -50V IC(MAX.) -100mA R1 2.2k DTA123JM DTA123JEB R2 (SC-105AA) (SC-89) 47k EMT3 UMT3F lFeatures l 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of DTA123JE DT
7.12. Size:141K rohm
dta123j-series.pdf 
-100mA / -50V Digital transistors (with built-in resistors) DTA123JM / DTA123JE / DTA123JUA / DTA123JKA Applications Inverter, Interface, Driver Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2)The bias resistors consist of thin-film resistors with complete isolation
7.13. Size:475K rohm
dta123j.pdf 
DTA123J series Datasheet PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) Outline VMT3 EMT3F Parameter Value OUT OUT VCC 50V IN IN IC(MAX.) 100mA GND GND R1 2.2k DTA123JM DTA123JEB R2 47k (SC-105AA) (SC-89) EMT3 UMT3F OUT Features OUT IN 1) Built-In Biasing Resistors IN GND GND 2) Built-in bias resistors enable the configur
7.14. Size:188K diodes
ddta123jua.pdf 
DDTA (R1 R2 SERIES) UA PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-323 A Complementary NPN Types Available (DDTC) Dim Min Max Built-In Biasing Resistors, R1 R2 A 0.25 0.40 Lead Free/RoHS Compliant (Note 1) B 1.15 1.35 "Green" Device (Note 2 & 3) B C C 2.00 2.20 Mechanical Data D 0.65 No
7.15. Size:191K diodes
ddta123jka.pdf 
DDTA (R1 R2 SERIES) KA PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A Complementary NPN Types Available (DDTC) Built-In Biasing Resistors, R1 R2 SC-59 Lead Free/RoHS Compliant (Note 1) Dim Min Max "Green" Device, Note 2 and 3 B C A 0.35 0.50 Mechanical Data B 1.50 1.70 C 2.70 3.00 Case SC
7.16. Size:93K diodes
ddta123je.pdf 
DDTA (R1 R2 SERIES) PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case SOT523 Complementary NPN Types Available (DDTC) Case Material Molded Plastic, Green Molding Compound, Note 3. UL Flammability Classification Rating 94V-0 Built-In Biasing Resistors, R1 R2 Moisture Sensitivity L
7.17. Size:176K diodes
ddta123jca.pdf 
DDTA (R1 R2 SERIES) CA PNP PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Epitaxial Planar Die Construction SOT-23 A Complementary NPN Types Available (DDTC) Dim Min Max Built-In Biasing Resistors, R1 R2 A 0.37 0.51 Lead, Halogen and Antimony Free, RoHS Compliant B 1.20 1.40
7.18. Size:240K mcc
dta123je sot-523.pdf 
MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 DTA123JE Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Built-in bias resistors enable the
7.19. Size:248K mcc
dta123jua sot-323.pdf 
MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 DTA123JUA Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 PNP Built-in bias resistors enab
7.21. Size:117K onsemi
dta123jm3.pdf 
MUN2135, MMUN2135L, MUN5135, DTA123JE, DTA123JM3, NSBA123JF3 Digital Transistors (BRT) R1 = 2.2 kW, R2 = 47 kW www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 This series of digital transistors is designed to replace a single COLLECTOR (OUTPUT) device and its external resistor bias network. The Bias Resistor PIN 1 R1 Transistor (BRT) co
7.22. Size:222K onsemi
dta114eet1g dta114tet1g dta114yet1g dta115eet1g dta123eet1g dta123jet1g dta124eet1g dta124xet1g.pdf 
DTA114EET1 Series, SDTA114EET1 Series Preferred Devices Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http //onsemi.com This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias PNP SIL
7.23. Size:128K utc
dta123j.pdf 
UNISONIC TECHNOLOGIES CO., LTD DTA123J PNP SILICON TRANSISTOR DIGITAL TRANSISTORS 3 (BUILT- IN BIAS RESISTORS) 1 2 SOT-23 (JEDEC TO-236) FEATURES 3 3 * Built-in bias resistors that implies easy ON/OFF applications. 1 1 * The bias resistors are thin-film resistors with complete isolation to 2 2 SOT-523 allow positive input. SOT-323 EQUIVALENT CIRCUIT 1 TO-92
7.24. Size:964K secos
dta123j series.pdf 
DTA123JCA/ DTA123JE/DTA123JUA/ DTA123JSA Elektronische Bauelemente PNP Digital Transistors (Built-in Resistors) FEATURES * Built-in bias resistors enable the configuration of an inverter circuit without connecting input resistors (see equivalent circuit). * Only the on/off confitions need to be set for operation, making device design easy. * The bias resistors consis of thin-film res
7.25. Size:143K lge
dta123j.pdf 
DTA123JE/DTA123JUA/DTA123JKA DTA123JCA/DTA123JSA Digital Transistor(PNP) Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost com
7.26. Size:336K willas
dta123je.pdf 
FM120-M WILLAS DTA123JE THRU PNP Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produc Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to Features optimize
7.27. Size:359K willas
dta123jca.pdf 
FM120-M WILLAS THRU DTA123JCA PNP Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produc Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimize board sp
7.28. Size:330K willas
dta123jua.pdf 
FM120-M WILLAS THRU DTA123JUA PNP Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produ Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimize board space
7.29. Size:371K cystek
dta123jc3.pdf 
Spec. No. C261C3 Issued Date 2014.10.28 CYStech Electronics Corp. Revised Date Page No. 1/6 PNP Digital Transistors (Built-in Resistors) DTA123JC3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors with complet
7.32. Size:262K first silicon
dta123j.pdf 
SEMICONDUCTOR DTA123J TECHNICAL DATA Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network B This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor K Transistor) contains a single transistor with a monolithic bias network resistor. The BRT eliminates the
7.33. Size:114K chenmko
chdta123jkgp.pdf 
CHENMKO ENTERPRISE CO.,LTD CHDTA123JKGP SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-23) SOT-23 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabil
7.34. Size:119K chenmko
chdta123jegp.pdf 
CHENMKO ENTERPRISE CO.,LTD CHDTA123JEGP SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation c
7.35. Size:131K chenmko
chdta123jugp.pdf 
CHENMKO ENTERPRISE CO.,LTD CHDTA123JUGP SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-70/SOT-323) SC-70/SOT-323 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation c
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