DTC123JSA datasheet, аналоги, основные параметры
Наименование производителя: DTC123JSA
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 2.2 kOhm
Встроенный резистор цепи смещения R2 = 47 kOhm
Соотношение сопротивлений R1/R2 = 0.047
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.3 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 140 MHz
Статический коэффициент передачи тока (hFE): 80
Корпус транзистора: TO92S
Аналоги (замена) для DTC123JSA
- подборⓘ биполярного транзистора по параметрам
DTC123JSA даташит
..1. Size:345K secos
dtc123jsa dtc123jua.pdf 
DTC123JE/DTC123JUA/DTC123JKA DTC123JCA/TC123JSA Elektronische Bauelemente NPN Digital Transistors (Built-in Resistors) FEATURES * Built-in bias resistors enable the configuration of an inverter circuit without connecting input resistors (see equivalent circuit). * Only the on/off confitions need to be set for operation, making device design easy. * The bias resistors consis of thin-fi
6.1. Size:347K secos
dtc123jseries.pdf 
DTC123JE/DTC123JUA/DTC123JKA DTC123JCA/TC123JSA Elektronische Bauelemente NPN Digital Transistors (Built-in Resistors) FEATURES * Built-in bias resistors enable the configuration of an inverter circuit without connecting input resistors (see equivalent circuit). * Only the on/off confitions need to be set for operation, making device design easy. * The bias resistors consis of thin-fi
7.1. Size:54K motorola
pdtc123jef 1.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC123JEF NPN resistor-equipped transistor 1999 May 27 Preliminary specification Philips Semiconductors Preliminary specification NPN resistor-equipped transistor PDTC123JEF FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 k respectively) 3 handbook, halfpage 3 Simplification of circuit design R1 1 Red
7.2. Size:55K motorola
pdtc123je 3.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC123JE NPN resistor-equipped transistor 1999 May 21 Product specification Supersedes data of 1998 Aug 03 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123JE FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 and 47 k respectively) Simplification of circuit design handbook, halfpage 3 3
7.3. Size:56K motorola
pdtc123jt 3.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC123JT NPN resistor-equipped transistor 1999 May 18 Product specification Supersedes data of 1998 May 08 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123JT FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 k respectively) Simplification of circuit design
7.4. Size:54K philips
pdtc123jef 1.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC123JEF NPN resistor-equipped transistor 1999 May 27 Preliminary specification Philips Semiconductors Preliminary specification NPN resistor-equipped transistor PDTC123JEF FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 k respectively) 3 handbook, halfpage 3 Simplification of circuit design R1 1 Red
7.5. Size:55K philips
pdtc123je 3.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC123JE NPN resistor-equipped transistor 1999 May 21 Product specification Supersedes data of 1998 Aug 03 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123JE FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 and 47 k respectively) Simplification of circuit design handbook, halfpage 3 3
7.6. Size:174K philips
pdtc123j series.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET PDTC123J series NPN resistor-equipped transistors; R1 = 2.2 k , R2 = 47 k Product data sheet 2004 Aug 13 Supersedes data of 2003 Apr 10 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; PDTC123J series R1 = 2.2 k , R2 = 47 k FEATURES QUICK REFERENCE DATA Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNIT
7.7. Size:56K philips
pdtc123jt 3.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC123JT NPN resistor-equipped transistor 1999 May 18 Product specification Supersedes data of 1998 May 08 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123JT FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 k respectively) Simplification of circuit design
7.8. Size:73K rohm
dtc123jub.pdf 
Transistors DTC123JUB 100mA / 50V Digital transistors (with built-in resistors) DTC123JUB Applications Dimensions (Unit mm) Inverter, Interface, Driver UMT3F 2.0 Features 0.9 0.32 1) Built-in bias resistors enable the configuration of (3) an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-fi
7.9. Size:152K rohm
dtc123jeb.pdf 
100mA / 50V Digital transistors (with built-in resistors) DTC123JEB Applications Dimensions (Unit mm) Inverter, Interface, Driver EMT3F 1.6 0.7 0.26 Features 1) Built-in bias resistors enable the configuration of (3) an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors (1) (2)
7.10. Size:140K rohm
dtc123j-series dtc123je.pdf 
100mA / 50V Digital transistors (with built-in resistors) DTC123JM / DTC123JE / DTC123JUA / DTC123JKA Applications Inverter, Interface, Driver Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent circuit). 2)The bias resistors consist of thin-film resistors with complete isolati
7.11. Size:138K rohm
dtc123jka.pdf 
100mA / 50V Digital transistors (with built-in resistors) DTC123JM / DTC123JE / DTC123JUA / DTC123JKA Applications Inverter, Interface, Driver Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent circuit). 2)The bias resistors consist of thin-film resistors with complete isolati
7.12. Size:1527K rohm
dtc123jefra dtc123jkafra dtc123jmfha dtc123juafra.pdf 
DTC123J series Datasheet NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) lOutline l Parameter Value VMT3 EMT3F VCC 50V IC(MAX.) 100mA R1 2.2k DTC123JM DTC123JEB R2 (SC-105AA) (SC-89) 47k EMT3 UMT3F lFeatures l 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of DTC123JE DTC123
7.13. Size:76K rohm
dtc123je-jua-jka e42 sot416 323 346.pdf 
DTC123JE / DTC123JUA / DTC123JKA / DTC123JSA Transistor Digital transistors (built-in resistors) DTC123JE / DTC123JUA / DTC123JKA / DTC123JSA Features External dimensions (Units mm) 1) Built-in bias resistors enable the 1.6 0.2 DTC123JE configuration of an inverter circuit 1.0 0.1 without connecting external input 0.7 0.1 0.5 0.5 +0.1 +0.1 0.2-0.05 0.2-0.05 0.55 0.1 resist
7.14. Size:204K diodes
ddtc123jka.pdf 
DDTC (R1 R2 SERIES) KA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) A Built-In Biasing Resistors, R1 R2 SC-59 Lead Free/RoHS Compliant (Note 1) Dim Min Max "Green" Device, Note 2 and 3 B C A 0.35 0.50 B 1.50 1.70 Mechanical Data C 2.70 3.00 G Case
7.15. Size:93K diodes
ddtc123jca.pdf 
DDTC (R1 R2 SERIES) CA NPN PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTOR Product Summary Features and Benefits Epitaxial Planar Die Construction Part Number R1 (NOM) R2 (NOM) Complementary PNP Types Available (DDTA) DDTC113ZCA 1K 10K Built-In Biasing Resistors, R1 R2 DDTC123YCA 2.2K 10K Lead Free , RoHS Compliant (Note 1) DDTC123JCA
7.16. Size:197K diodes
ddtc123jlp.pdf 
DDTCxxxxLP (R1 R2 Series) PRE-BIASED SMALL SIGNAL SURFACE MOUNT 100mA NPN TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Epitaxial Planar Die Construction Case DFN1006-3 Ultra-Small Leadless Surface Mount Package Case Material Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0
7.17. Size:237K diodes
ddtc123je.pdf 
DDTC (R1 R2 SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-523 Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1 R2 Dim Min Max Typ Lead Free/RoHS Compliant (Note 2) B C A 0.15 0.30 0.22 TOP VIEW "Green" Device (Note 3 and 4) B 0.75 0.85 0.80 C 1.45 1.75 1.60
7.18. Size:203K diodes
ddtc123jua.pdf 
DDTC (R1 R2 SERIES) UA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-323 A Complementary PNP Types Available (DDTA) Dim Min Max Built-In Biasing Resistors, R1 R2 A 0.25 0.40 Lead Free/RoHS Compliant (Note 1) B 1.15 1.35 B C "Green" Device (Note 2 & 3) C 2.00 2.20 Mechanical Data D 0.65 No
7.19. Size:224K mcc
dtc123jua sot-323.pdf 
MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth DTC123JUA Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Epitaxial Planar Die Construction Complementary NPN Types Available Digital Transistors Built-in Bias Resistors Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering
7.20. Size:156K onsemi
dtc123jm3.pdf 
MUN2235, MMUN2235L, MUN5235, DTC123JE, DTC123JM3, NSBC123JF3 Digital Transistors (BRT) R1 = 2.2 kW, R2 = 47 kW http //onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 This series of digital transistors is designed to replace a single COLLECTOR (OUTPUT) device and its external resistor bias network. The Bias Resistor PIN 1 R1 Transistor (BRT)
7.21. Size:144K onsemi
dtc123jet1g dtc124eet1g dtc124xet1g dtc143eet1g dtc143tet1g dtc143zet1g dtc144eet1g.pdf 
DTC114EET1 Series, SDTC114EET1 Series Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single http //onsemi.com device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two r
7.22. Size:82K onsemi
dtc123jm3t5g dtc124em3t5g dtc124xm3t5g dtc143em3t5g dtc143tm3t5g dtc143zm3t5g dtc144em3t5g.pdf 
DTC114EM3T5G Series Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor http //onsemi.com contains a single transistor with a monolithic bias network consisting of two resistors; a series base resis
7.23. Size:399K onsemi
mun2235t1g mmun2235lt1g mun5235t1g dtc123jet1g dtc123jm3t5g nsbc123jf3t5g.pdf 
MUN2235, MMUN2235L, MUN5235, DTC123JE, DTC123JM3, NSBC123JF3 Digital Transistors (BRT) R1 = 2.2 kW, R2 = 47 kW www.onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 This series of digital transistors is designed to replace a single COLLECTOR (OUTPUT) device and its external resistor bias network. The Bias Resistor PIN 1 R1 Transistor (BRT) co
7.24. Size:180K utc
dtc123j.pdf 
UNISONIC TECHNOLOGIES CO., LTD DTC123J NPN SILICON TRANSISTOR NPN DIGITAL TRANSISTOR (BUILT-IN RESISTORS) FEATURES * Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). * The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. Th
7.25. Size:145K lge
dtc123j.pdf 
DTC123JE/DTC123JUA/DTC123JCA DTC123JKA/DTC123JSA Digital Transistor(NPN) Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost com
7.26. Size:400K willas
dtc123jca.pdf 
FM120-M WILLAS THRU DTC123JCA NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produc Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimize board s
7.27. Size:403K willas
dtc123jua.pdf 
FM120-M WILLAS THRU DTC123JUA NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produ Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimize board spa
7.28. Size:290K cystek
dtc123jn3.pdf 
Spec. No. C360N3 Issued Date 2005.09.08 CYStech Electronics Corp. Revised Date 2011.01.24 Page No. 1/6 NPN Digital Transistors (Built-in Resistors) DTC123JN3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors wi
7.30. Size:545K lrc
ldtc143em3t5g ldtc143zm3t5g ldtc124xm3t5g ldtc123jm3t5g ldtc115em3t5g ldtc144wm3t5g ldtc144tm3t5g.pdf 
LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors NPN Silicon Surface Mount Transistors Series LDTC114EM3T5G LDTC114EM3T5G S-LDTC114EM3T5G Series With Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic
7.31. Size:306K first silicon
dtc123j.pdf 
SEMICONDUCTOR DTC123J TECHNICAL DATA Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network B This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor K Transistor) contains a single transistor with a monolithic bias network resistor. The BRT eliminates the
7.32. Size:90K kexin
dtc123jua.pdf 
SMD Type Transistors Digital Transistors DTC123JUA (KDTC123JUA) Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.They also have the advantage of almost completely eliminatin
7.33. Size:150K chenmko
chdtc123jegp.pdf 
CHENMKO ENTERPRISE CO.,LTD CHDTC123JEGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation c
7.34. Size:134K chenmko
chdtc123jugp.pdf 
CHENMKO ENTERPRISE CO.,LTD CHDTC123JUGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE SC-70/SOT-323 * Small surface mounting type. (SC-70/SOT-323) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation
7.35. Size:127K chenmko
chdtc123jkgp.pdf 
CHENMKO ENTERPRISE CO.,LTD CHDTC123JKGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-23) SOT-23 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabil
7.36. Size:1628K cn shikues
dtc123je.pdf 
DTC123JE Digital Transistors (Built-in Resistors) DIGITAL TRANSISTOR (NPN) FEATURES Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input.They also have the advantage of almos
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