EMB6 / UMB6NDatasheetPNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)lOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) VCC-50V (5) (4) (4) (1) (1) IC(MAX.)-100mA (2) (2) (3) (3) R147kWEMB6 UMB6N R2(SC-107C) 47kW SOT-353 (SC-88) lFeatures lInner circuit1) Built-In Biasing Resistors, R1 = R2 = 47kW.2) Tw

EMB60DatasheetComplex Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter DTr1 and DTr2 EMT6VCC-50VIC(MAX.)-100mA R12.2kEMB60R2 (SC-107C) 47k lFeatures lInner circuitl l1) Two DTA023J chips in a EMT6 package.2) Transister elements are independent, eliminati

EMB61DatasheetComplex Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter DTr1 and DTr2 EMT6VCC-50VIC(MAX.)-100mA R110kEMB61R2 (SC-107C) 10k lFeatures lInner circuitl l1) Two DTA014E chips in a EMT6 package.2) Transister elements are independent, eliminatin

EMB6 / UMB6NEMB6FHA / UMB6NFHADatasheetPNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) VCC-50V (5) (4) (4) (1) (1) IC(MAX.)-100mA (2) (2) (3) (3) R147kWEMB6 UMB6N EMB6FHA UMB6NFHAR247kW (SC-107C) SOT-353 (SC-88) lFeatures lInner circui

CHENMKO ENTERPRISE CO.,LTDCHEMB6GPSURFACE MOUNT Dual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 30 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-563)SOT-563* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabili

EMB60N06Awww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.073 at VGS = 10 V 18.2 Material categorization:60 19.8For definitions of compliance please see0.085 at VGS = 4.5 V 13.2TO-252APPLICATIONSD DC/DC Converters DC/AC Inverters