Биполярный транзистор DTD123ES - описание производителя. Основные параметры. Даташиты.
Наименование производителя: DTD123ES
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 2.2 kOhm
Встроенный резистор цепи смещения R2 = 2.2 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.3 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 140 MHz
Статический коэффициент передачи тока (hfe): 39
Корпус транзистора: SC72
DTD123ES Datasheet (PDF)
dtd123ek dtd123es.pdf
TransistorsDigital transistors (built-in resistors)DTD123EK / DTD123ESFFeatures FExternal dimensions (Units: mm)1) Built-in bias resistors enable theconfiguration of an inverter circuitwithout connecting external inputresistors (see equivalent circuit).2) The bias resistors consist of thin-film resistors with complete isola-tion to allow negative biasing of theinput. They
pdtd123ek pdtd123es.pdf
PDTD123E seriesNPN 500 mA, 50 V resistor-equipped transistors;R1 = 2.2 k, R2 = 2.2 kRev. 02 16 November 2009 Product data sheet1. Product profile1.1 General description500 mA NPN Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package PNP complementNXP JEITA JEDECPDTD123EK SOT346 SC-59A TO-236 PDTB123EKPDTD123ES[1] SOT54 SC-43A TO-92
pdtd123e ser.pdf
PDTD123E seriesNPN 500 mA, 50 V resistor-equipped transistors;R1 = 2.2 k, R2 = 2.2 kRev. 02 16 November 2009 Product data sheet1. Product profile1.1 General description500 mA NPN Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package PNP complementNXP JEITA JEDECPDTD123EK SOT346 SC-59A TO-236 PDTB123EKPDTD123ES[1] SOT54 SC-43A TO-92
dtd123ek.pdf
500mA / 50V Digital transistors (with built-in resistors) DTD123EK Applications Dimensions (Unit : mm) Inverter, Interface, Driver DTD123EK2.9 1.1 Features 1)Built-in bias resistors enable the configuration of an inverter 0.4 0.8circuit without connecting external input resistors (see (3)equivalent circuit). 2)The bias resistors consist of thin-film resistors
ddtd123eu.pdf
DDTD (xxxx) U NPN PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-323 Complementary PNP Types Available (DDTB) Dim Min Max Built-In Biasing Resistors, R1, R2 A 0.25 0.40 Lead Free/RoHS Compliant Version (Note 2) B 1.15 1.35 B C "Green" Device, Note 3 and 4 C 2.00 2.20 Mechanical Data D 0.65 Nominal E 0.
ddtd123ec.pdf
DDTD (xxxx) CNPN PRE-BIASED 500mA SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-23 Complementary PNP Types Available (DDTB) Case Material: Molded Plastic, Green Molding Compound, Note 3. UL Flammability Classification Rating 94V-0 Built-In Biasing Re
ldtd123eet1g.pdf
LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorNPN Silicon Surface Mount TransistorLDTD123EET1Gwith Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1resistors (see equivalent circuit). 22) The bias resistors consist
chdtd123ekgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHDTD123EKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23)SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabi
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Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050