2N363 - Аналоги. Основные параметры
Наименование производителя: 2N363
Тип материала: Ge
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.17
W
Макcимально допустимое напряжение коллектор-база (Ucb): 32
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6
V
Макcимальный постоянный ток коллектора (Ic): 0.1
A
Предельная температура PN-перехода (Tj): 85
°C
Граничная частота коэффициента передачи тока (ft): 0.6
MHz
Статический коэффициент передачи тока (hfe): 90
Корпус транзистора:
TO5
Аналоги (замена) для 2N363
-
подбор ⓘ биполярного транзистора по параметрам
2N363 - технические параметры
0.1. Size:87K central
2n3634 2n3635.pdf 

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824
0.2. Size:32K semelab
2n3637dcsm.pdf 

2N3637DCSM MECHANICAL DATA DUAL PNP SILICON TRANSISTORS Dimensions in mm (inches) IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS 1.40 0.15 2.29 0.20 1.65 0.13 (0.055 0.006) (0.09 0.008) (0.065 0.005) FEATURES 2 3 High Voltage Switching 1 4 A Low Power Amplifier Applications 0.23 6 5 rad. (0.009) Herme
0.3. Size:32K semelab
2n3634csm.pdf 

2N3634CSM MECHANICAL DATA PNP SILICON TRANSISTOR IN A Dimensions in mm (inches) HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR 0.51 0.10 (0.02 0.004) 0.31 HIGH RELIABILITY APPLICATIONS rad. (0.012) 3 FEATURES 21 High Voltage Switching 1.91 0.10 Low Power Amplifier Applications (0.075 0.004) A 0.31 rad. Hermetic Ceramic Surface Mount (0.012) 3.
0.4. Size:18K semelab
2n3637csm.pdf 

2N3637CSM MECHANICAL DATA PNP SILICON TRANSISTOR IN A Dimensions in mm (inches) HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS 0.51 0.10 (0.02 0.004) 0.31 rad. (0.012) 3 FEATURES 21 High Voltage Switching Low Power Amplifier Applications 1.91 0.10 (0.075 0.004) A 0.31 rad. Hermetic Ceramic Surface Mount (0.012)
0.5. Size:219K bocasemi
2n3634 2n3635 2n3636 2n3637.pdf 

Boca Semiconductor Corp. BSC http //www.bocasemi.com http //www.bocasemi.com http //www.bocasemi.com http //www.bocasemi.com http //www.bocasemi.com http //www.bocasemi.com http //www.bocasemi.com
0.6. Size:247K cdil
2n3635 6 7.pdf 

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR RF TRANSISTORS 2N3635 2N3636 2N3637 TO-39 Metal Can Package 2N3635 and 2N3637 Are PNP Silicon Transistros For High Voltage Switching and Low Power Amplifier. ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL 2N3635 2N3636, 37 UNITS Collector E
0.7. Size:227K microsemi
2n3635ub.pdf 

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS JANSM 3K Rads (Si) 2N3634 2N3635 2N3636 2N3637 JANSD 10K Rads (Si) 2N3634L 2N3635L 2N3636L 2N3637L JANSP 30K Rads (Si)
0.8. Size:227K microsemi
2n3637ub.pdf 

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS JANSM 3K Rads (Si) 2N3634 2N3635 2N3636 2N3637 JANSD 10K Rads (Si) 2N3634L 2N3635L 2N3636L 2N3637L JANSP 30K Rads (Si)
0.9. Size:169K microsemi
2n3637l.pdf 

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Tel +353 (0) 65 6840044 Fax +353 (0) 65 6822298 Website http //www.microsemi.com PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS 2N3634 2N3635 2N3636 2N3637 JAN 2N3634L 2N3635L 2N3636L 2
0.10. Size:227K microsemi
2n3636ub.pdf 

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS JANSM 3K Rads (Si) 2N3634 2N3635 2N3636 2N3637 JANSD 10K Rads (Si) 2N3634L 2N3635L 2N3636L 2N3637L JANSP 30K Rads (Si)
0.11. Size:227K microsemi
2n3634l.pdf 

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS JANSM 3K Rads (Si) 2N3634 2N3635 2N3636 2N3637 JANSD 10K Rads (Si) 2N3634L 2N3635L 2N3636L 2N3637L JANSP 30K Rads (Si)
0.12. Size:227K microsemi
2n3635l.pdf 

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS JANSM 3K Rads (Si) 2N3634 2N3635 2N3636 2N3637 JANSD 10K Rads (Si) 2N3634L 2N3635L 2N3636L 2N3637L JANSP 30K Rads (Si)
0.13. Size:227K microsemi
2n3634ub.pdf 

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS JANSM 3K Rads (Si) 2N3634 2N3635 2N3636 2N3637 JANSD 10K Rads (Si) 2N3634L 2N3635L 2N3636L 2N3637L JANSP 30K Rads (Si)
0.15. Size:227K microsemi
2n3636l.pdf 

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS JANSM 3K Rads (Si) 2N3634 2N3635 2N3636 2N3637 JANSD 10K Rads (Si) 2N3634L 2N3635L 2N3636L 2N3637L JANSP 30K Rads (Si)
Другие транзисторы... 2N3622
, 2N3623
, 2N3624
, 2N3625
, 2N3626
, 2N3627
, 2N3628
, 2N3629
, TIP41
, 2N3630
, 2N3632
, 2N3633
, 2N3634
, 2N3634S
, 2N3635
, 2N3635S
, 2N3636
.
History: 2SC133
| CMBTA92