F103. Аналоги и основные параметры
Наименование производителя: F103
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 85 W
Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
Макcимальный постоянный ток коллектора (Ic): 4 A
Предельная температура PN-перехода (Tj): 175 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 1 MHz
Статический коэффициент передачи тока (hFE): 10
Корпус транзистора: TO53
Аналоги (замена) для F103
- подборⓘ биполярного транзистора по параметрам
F103 даташит
0.1. Size:100K motorola
mrf1035mbrev0.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1035MB/D The RF Line Microwave Pulse MRF1035MB Power Transistors Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 35 Watts Peak 35 W (PEAK), 960 1215 MHz Minimum Gain = 10 dB MIC
0.2. Size:54K motorola
mrf1030r.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1030/D The RF Line UHF Power Transistor MRF1030 . . . designed primarily for wideband, large signal output and driver amplifier stages to 1.0 GHz. Designed for Class A Linear Power Amplifiers Specified 25 Volt, 900 MHz Characteristics Output Power 3.0 Watts Power Gain 7.5 dB Min, Class AB 3.0 W, TO 1
0.3. Size:55K motorola
mrf1032.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1032/D The RF Line UHF Power Transistor MRF1032 . . . designed primarily for large signal output and driver amplifier stages to 1.0 GHz. Designed for Class A Linear Power Amplifiers Specified 25 Volt, 900 MHz Characteristics Output Power 6.0 Watts Power Gain 6.5 dB Min, Class AB 6.0 W, TO 1.0 GHz LI
0.4. Size:113K motorola
mrf1035m.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1035MA/D The RF Line Microwave Pulse MRF1035MA Power Transistors MRF1035MB . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 35 Watts Peak 35 W (PEAK), 960 1215 MHz Minimum
0.5. Size:55K motorola
mrf1032r.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1032/D The RF Line UHF Power Transistor MRF1032 . . . designed primarily for large signal output and driver amplifier stages to 1.0 GHz. Designed for Class A Linear Power Amplifiers Specified 25 Volt, 900 MHz Characteristics Output Power 6.0 Watts Power Gain 6.5 dB Min, Class AB 6.0 W, TO 1.0 GHz LI
0.6. Size:54K motorola
mrf1031r.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1031/D The RF Line UHF Power Transistor MRF1031 . . . designed primarily for wideband, large signal output and driver amplifier stages to 1.0 GHz. Designed for Class A Linear Power Amplifiers Specified 25 Volt, 900 MHz Characteristics Output Power 4.5 Watts Power Gain 7.0 dB Min, Class AB 4.5 W, TO 1
0.7. Size:100K motorola
mrf1035mb.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1035MB/D The RF Line Microwave Pulse MRF1035MB Power Transistors Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 35 Watts Peak 35 W (PEAK), 960 1215 MHz Minimum Gain = 10 dB MIC
0.8. Size:54K motorola
mrf1031.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1031/D The RF Line UHF Power Transistor MRF1031 . . . designed primarily for wideband, large signal output and driver amplifier stages to 1.0 GHz. Designed for Class A Linear Power Amplifiers Specified 25 Volt, 900 MHz Characteristics Output Power 4.5 Watts Power Gain 7.0 dB Min, Class AB 4.5 W, TO 1
0.9. Size:101K motorola
mrf10350.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF10350/D The RF Line Microwave Pulse MRF10350 Power Transistor Designed for 1025 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode S transmitters. Guaranteed Performance @ 1090 MHz Output Power = 350 Watts Peak 350 W (PEAK) Gain = 8.5 dB Min, 9.0 dB (Typ) 1025 1150 MHz MICROWAVE
0.10. Size:54K motorola
mrf1030.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1030/D The RF Line UHF Power Transistor MRF1030 . . . designed primarily for wideband, large signal output and driver amplifier stages to 1.0 GHz. Designed for Class A Linear Power Amplifiers Specified 25 Volt, 900 MHz Characteristics Output Power 3.0 Watts Power Gain 7.5 dB Min, Class AB 3.0 W, TO 1
0.11. Size:113K motorola
mrf1035ma mrf1035mb.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1035MA/D The RF Line Microwave Pulse MRF1035MA Power Transistors MRF1035MB . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 35 Watts Peak 35 W (PEAK), 960 1215 MHz Minimum
0.12. Size:183K macom
mrf10350.pdf 
MRF10350 Microwave Pulse Power Silicon NPN Transistor M/A-COM Products Released - Rev. 07.07 350W (peak), 1025 1150MHz Product Image Designed for 1025 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode S transmitters. Guaranteed performance @ 1090 MHz Output power = 350 W Peak Gain = 8.5 dB min, 9.0 dB (typ.) 100% tested for load
0.13. Size:826K silikron
ssf1030d.pdf 
SSF1030D Feathers ID =45A Advanced trench process technology BV=100V Ultra low Rdson, typical 23mohm Rdson=23m typ. High avalanche energy, 100% test Fully characterized avalanche voltage and current Description The SSF1030D is a new generation of middle voltage and high current N Channel enhancement mode trench power MOSFET. This new technology increa
0.14. Size:536K silikron
ssf1030.pdf 
SSF1030 Main Product Characteristics VDSS 100V RDS(on) 20.5m (typ.) ID 45A Mar ki ng a nd p in Sche ma ti c di agr a m TO-220 Assignment Features and Benefits Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recov
0.15. Size:390K silikron
ssf1030b.pdf 
SSF1030B Feathers Advanced trench process technology ID =7A Ultra low Rdson, typical 25mohm BV=100V High avalanche energy, 100% test Rdson=25m typ. Fully characterized avalanche voltage and current Description The SSF1030B is a new generation of middle voltage and high current N Channel enhancement mode trench power MOSFET. This new technology
Другие транзисторы: EW59, EW69, EW721, EW722, EW723, EWQ282, F101, F102, 2SB817, F104, F105, F106, F107, F108, F109, F110, F111
