F121 - параметры, поиск аналогов, даташиты транзистора

Биполярный транзистор F121 - описание производителя. Основные параметры. Даташиты.

   Наименование производителя: F121
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 85 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 55 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 55 V
   Макcимальный постоянный ток коллектора (Ic): 4 A
   Предельная температура PN-перехода (Tj): 100 °C
   Граничная частота коэффициента передачи тока (ft): 1 MHz
   Статический коэффициент передачи тока (hfe): 10
   Корпус транзистора: TO53

Аналоги (замена) для F121

F121 Datasheet (PDF)

0.1. Size:415K philips
bf1211 r wr.pdf

DISCRETE SEMICONDUCTORS DATA SHEETBF1211; BF1211R; BF1211WRN-channel dual-gate MOS-FETsProduct specification 2003 Dec 16NXP Semiconductors Product specificationBF1211; BF1211R;N-channel dual-gate MOS-FETsBF1211WRFEATURES PINNING Short channel transistor with high forward transfer PIN DESCRIPTIONadmittance to input capacitance ratio1source Low noise gain contr

0.2. Size:252K philips
bf1210.pdf

BF1210Dual N-channel dual gate MOSFETRev. 01 25 October 2006 Product data sheet1. Product profile1.1 General descriptionThe BF1210 is a combination of two dual gate MOSFET amplifiers with shared sourceand gate2 leads.The source and substrate are interconnected. Internal bias circuits enableDC stabilization and a very good cross modulation performance during AGC. Integrated

0.3. Size:262K philips
bf1215.pdf

BF1215Dual N-channel dual gate MOSFETRev. 01 6 May 2010 Product data sheet1. Product profile1.1 General descriptionThe BF1215 is a combination of two dual gate MOSFET amplifiers with shared source lead, shared gate2 lead and an integrated switch.The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross modulation perfor

0.4. Size:672K philips
bf1218.pdf

BF1218Dual N-channel dual gate MOSFETRev. 01 14 April 2010 Product data sheet1. Product profile1.1 General descriptionThe BF1218 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The integrated switch is operated by the gate1 bias of amplifier B.The source and substrate are interconnected. Internal bias circuits

0.5. Size:211K philips
bf1214.pdf

BF1214Dual N-channel dual gate MOSFETRev. 01 30 October 2007 Product data sheet1. Product profile1.1 General descriptionThe BF1214 is a combination of two dual gate MOSFET amplifiers with shared sourceand gate2 leads.The source and substrate are interconnected. Internal bias circuits enableDC stabilization and a very good cross modulation performance during AGC. Integrated

0.6. Size:185K philips
bf1216.pdf

BF1216Dual N-channel dual gate MOSFETRev. 01 29 April 2010 Product data sheet1. Product profile1.1 General descriptionThe BF1216 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads.The source and substrate are interconnected. Internal bias circuits enable DC stabilization and very good cross modulation performance during AGC. Integrated dio

0.7. Size:429K philips
bf1212 r wr.pdf

DISCRETE SEMICONDUCTORS DATA SHEETBF1212; BF1212R; BF1212WRN-channel dual-gate MOS-FETsProduct specification 2003 Nov 14NXP Semiconductors Product specificationBF1212; BF1212R;N-channel dual-gate MOS-FETsBF1212WRFEATURES PINNING Short channel transistor with high forward transfer PIN DESCRIPTIONadmittance to input capacitance ratio1source Low noise gain contr

0.8. Size:170K fairchild semi
irf120 irf121 irf122 irf123 mtp10n08.pdf