FMMT449CEB SuperSOTTM-3 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Sourced from Process NB. Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter FMMT449 Units30 VVCEO Collector-Emitter Voltage50 VVCBO Collector-Base Voltage5 VVEBO

SOT23 NPN SILICON PLANAR49 FMMT449MEDIUM POWER TRANSISTORISSUE 3 - NOVEMBER 1995 T i I i RCE(sat) 250m at 1AEC T T T T I D T I BABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I IT DITI II V V I I V I II i V

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors FMMT449 TRANSISTOR (NPN) SOT23 FEATURES Low Equivalent On-Resistance MARKING: 449 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage 50 V CBO3. COLLECTOR V Collector-Emitter Voltage 30 V CEO

FMMT449 TRANSISTOR (NPN) SOT23 FEATURES Low Equivalent On-Resistance MARKING: 449 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage 50 V CBO3. COLLECTOR V Collector-Emitter Voltage 30 V CEOV Emitter-Base Voltage 5 V EBOI Collector Current 1 A CPC Collector Power Dissipation 200

SOT23 NPN SILICON PLANAR400 FMMT4400GENERAL PURPOSE TRANSISTORS401 FMMT4401ISSUE 4 FEBRUARY 1997 E T I D T I T C T VB ABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) T T T I I IT DITI II i V V I I V I II V V I I V I

SOT23 PNP SILICON PLANAR402 FMMT4402GENERAL PURPOSE TRANSISTOR403 FMMT4403ISSUE 2 - MARCH 1995 E T I D T I T C T VB ABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) T T T I I IT DITI II i V V I I V I II V V I I V I i V

FMMT413 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data Avalanche Transistor Case: SOT23 50A Peak Avalanche Current (Pulse width = 20ns) Case Material: Molded Plastic. Green Molding Compound. BVCES > 150V UL Flammability Classification Rating 94V-0 BVCEO > 50V Moisture Sensitivity: Level 1 per J-STD-020 Specifically designed for Av

FMMT491A 40V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23 Feature Mechanical Data BVCEO > 40V Case: SOT23 Case Material: Molded Plastic, Green Molding Compound IC = 1A Continuous Collector Current UL Flammability Classification Rating 94V-0 ICM = 2A Peak Pulse Current Moisture Sensitivity: Level 1 per J-STD-020 RCE(sat) = 195m for a

FMMT491Q 60V NPN MEDIUM POWER TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the Case: SOT23 stringent requirements of automotive applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Feature Term

FMMT495 150V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23 Feature Mechanical Data BVCEO > 150V Case: SOT23 IC = 1A Continuous Collector Current Case Material: Molded Plastic, Green Molding Compound. ICM = 2A Peak Pulse Current UL Flammability Classification Rating 94V-0 500mW Power Dissipation Moisture Sensitivity: Level 1 per J-STD-020

A Product Line ofDiodes IncorporatedFMMT459500V NPN HIGH VOLTAGE TRANSISTOR IN SOT23 Feature Mechanical Data BVCEV > 500V Case: SOT23 BVECV > 6V reverse blocking Case Material: Molded Plastic, Green Molding Compound UL Flammability Classification Rating 94V-0 IC = 150mA high Continuous Collector Current Moisture Sensitivity: Level 1 per J-STD-020

FMMT494 120V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23 Feature Mechanical Data BVCEO > 120V Case: SOT23 (Type DN) IC = 1A Continuous Collector Current Case Material: Molded Plastic, Green Molding Compound. ICM = 2A Peak Pulse Current UL Flammability Classification Rating 94V-0 500mW Power Dissipation Moisture Sensitivity: Level 1 per J-STD

SOT SI I O A A T 6S IT HI T A SISTO ISS A H T I D T I A SO T A I ATI S T V IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T T I A HA A T ISTI S a Ta T I IT DITI II V V I V I II i V V I V I i V V I V I II I V V i I V V II i V V I I i V I i V V I I i V I i I V V T i I V V T i i T I V V i V V I

A Product Line ofDiodes IncorporatedFMMT48930V NPN MEDIUM POWER TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > 30V Case: SOT-23 IC = 1A high Continuous Collector Current Case material: Molded Plastic. Green Molding Compound. ICM Up to 4A Peak Pulse Current UL Flammability Rating 94V-0 Excellent hFE Characteristics Up To 4A Moisture Sens

SOT SI I O A A T S IT HI T A SISTO ISS A H T I D T I A SO T A I ATI S T V IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T T I A HA A T ISTI S a Ta T I IT DITI II V V I V I II i V V I V I i V V I V I II I V V i I V V II i V V I I i V I i V V I I i V I i I V V T i I V V T i i T I V V i V V I

FMMT497SOT23 NPN silicon planar high voltage high performance transistorComplementary part number - FMMT597CDevice marking - 497BEECBPinout - top viewAbsolute maximum ratingsParameter Symbol Value UnitCollector-base voltage VCBO 300 VCollector-emitter voltage VCEO 300 VEmitter-base voltage VEBO 5VContinuous collector current IC 500 mAPeak pulse current ICM 1A

SOT SI I O A A T S IT HI T A SISTO ISS A H T I D T I DA SO T A I ATI S T V IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T T I A HA A T ISTI S a Ta T I IT DITI II V V I V I II i V V I V I i V V I V I II I V V i I V V II i V V I I i V I i V V I I i V I i I V V T i I V V T i i T I V V i V V I

A Product Line ofDiodes IncorporatedFMMT459Q500V NPN HIGH VOLTAGE TRANSISTOR IN SOT23 Description Mechanical Data Case: SOT23This Bipolar Junction Transistor (BJT) has been designed to meet the Case Material: Molded Plastic, Green Molding Compound stringent requirements of Automotive Applications. UL Flammability Classification Rating 94V-0 Moisture Sensiti

SOT SI I O A A T S IT HI T A SISTO ISS A H T I D T I A SO T A I ATI S T V IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T T I A HA A T ISTI S a Ta T I IT DITI II V V I V I II i V V I V I i V V I V I II I V V i I V V II i V V I I i V I i V V I I i V I i I V V T i I V V T i i T I V V i V V I

A Product Line of Diodes Incorporated FMMT451 60V NPN MEDIUM POWER TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > 60V Case: SOT23 IC = 1A Continuous Collector Current Case Material: Molded Plastic, Green Molding Compound. ICM = 2A Peak Pulse Current UL Flammability Classification Rating 94V-0 500mW Power Dissipation Moisture Sensitivity: L

SOT SI I O A A T HI H O A T A SISTO ISS A Y 6 T V I V i T I D T I SOT A SO T A I ATI S T V IT II V I V V II i V I V V i V I V V I I i II I I Di i i T i T T T T I A HA A T ISTI S a Ta T I IT DITI II V V I V I II i V V I i i V I V i V V I V I II I V V i I V V II i V V I I i V I i I V V T i T I

A Product Line ofDiodes IncorporatedFMMT493100V NPN MEDIUM POWER TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > 100V Case: SOT23 IC = 1A High Continuous Collector Current Case material: Molded Plastic. Green Molding Compound. ICM = 2A Peak Pulse Current UL Flammability Rating 94V-0 500mW Power Dissipation Moisture Sensitivity: Level 1 p

FMMT458 400V NPN HIGH VOLTAGE TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > 400V Case: SOT23 IC = 225mA High Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound. UL ICM = 1A Peak Pulse Current Flammability Rating 94V-0 500mW Power Dissipation Moisture Sensitivity: Level 1 per J-STD-020 Excellent hFE Charac

FMMT415 FMMT417 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data Avalanche Transistor Case: SOT23 60A Peak Avalanche Current (Pulse width = 20ns) Case Material: Molded Plastic. Green Molding Compound. BVCES > 260V (415) & 320V (417) UL Flammability Classification Rating 94V-0 BVCEO > 100V Moisture Sensitivity: Level 1 per J-STD-020

FMMT493A HIGH GAIN NPN MEDIUM POWER TRANSISTOR IN SOT23 Feature Mechanical Data BVCEO > 60V Case: SOT23 IC = 1A Continuous Collector Current Case Material: Molded Plastic, Green Molding Compound. VCE(SAT)= 0.5V @1A UL Flammability Classification Rating 94V-0 500mW Power Dissipation Moisture Sensitivity: Level 1 per J-STD-020 Low Saturation Vol

A Product Line of Diodes Incorporated FMMT491 60V NPN MEDIUM POWER TRANSISTOR IN SOT23 Feature Mechanical Data BVCEO > 60V Case: SOT23 IC = 1A Continuous Collector Current Case Material: Molded plastic, Green Molding Compound ICM = 2A Peak Pulse Current UL Flammability Classification Rating 94V-0 RCE(sat) = 195m for a Low Equivalent On-Resistance

FMMT491Features Halogen Free. "Green" Device (Note 1) Moisture Sensitivity Level 1NPN Silicon Planar Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSHigh PerformanceCompliant. See Ordering Information)TransistorMaximum Ratings @ 25C Unless Otherwise Specified Operating Junction Temperature Range: -55

FMMT42CSMMECHANICAL DATAGENERAL PURPOSE Dimensions in mm (inches)NPN TRANSISTOR IN A HERMETICALLY SEALEDCERAMIC SURFACE MOUNT0.51 0.10(0.02 0.004) 0.31rad.(0.012)PACKAGE3FEATURES21 GENERAL PURPOSE NPN TRANSISTOR1.91 0.10(0.075 0.004)A HERMETIC CERAMIC SURFACE MOUNT0.31rad.(0.012)3.05 0.13PACKAGE (0.12 0.005)1.40(0.055)

FMMT42DCSMDimensions in mm (inches). Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar NPN Devices. A0.236 5rad. (0.009) V = 300V CEO6.22 0.13 A = 1.27 0.13I = 0.5A C(0.

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors FMMT495 TRANSISTOR (NPN)SOT-23FEATURE Low VCE(sat) hFE characterised up to 1A for high current gain hold up1. BASE For general amplification2. EMITTER3. COLLECTORMARKING: 495 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-B

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors FMMT493 TRANSISTOR (NPN) SOT23 FEATURES Complementary Type FMMT593 MARKING:493 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage 120 V CBO3. COLLECTOR V Collector-Emitter Voltage 100 V CEO

www.jscj-elec.com AD-FMMT491 JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-FMMT491 Plastic-Encapsulated Transistor AD-FMMT491 Transistor (NPN) FEATURES Low equivalent on-resistance AEC-Q101 qualified MARKING : 491 MAXIMUM RATINGS (T = 25C unless otherwise specified) j Parameter Symbol Value Unit Collector-base voltage V 80 V CBOCollector-emitter vo

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 FMMT491 TRANSISTOR (NPN) FEATURES 1. BASE Low equivalent on-resistance 2. EMITTER 3. COLLECTOR Marking :491 MAXIMUM RATINGS(Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Ba

FMMT4124TRANSISTOR (NPN) SOT23 FEATURES Switching Application MARKING:ZC 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage 30 V CBOV Collector-Emitter Voltage 25 V CEOV Emitter-Base Voltage 5 V EBOIC Collector Current 200 mA PC Collector Power Dissipation 330 mW R T

FMMT493 TRANSISTOR (NPN) SOT23 FEATURES Complementary Type FMMT593 MARKING:493 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage 120 V CBO3. COLLECTOR V Collector-Emitter Voltage 100 V CEOV Emitter-Base Voltage 5 V EBOI Collector Current 1000 mA CPC Collector Power Dissipation 2

FMMT491 TRANSISTOR (NPN) SOT-23 FEATURES Low equivalent on-resistance 1. BASE 2. EMITTER 3. COLLECTOR Marking :491 MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1 A PC Collector Power Dissipation 250 mW

FMMT491 SOT-23 Transistor(NPN)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Low equivalent on-resistance Marking :491 MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous

FMMT491COLLECTOR3General Purpose Transistor NPN Silicon 3P b Lead(Pb)-Free11BASE2SOT-232EMITTERMaximum RatingsRating Symbol Value UnitCollector-Base Breakdown VoltageV(BR)CEO 60 VCollector-Emitter Breakdown VoltageV(BR)CBO 80 VEmitter-Base Breakdown VoltageV(BR)EBOV 5.0Collector Current IC A 1.0Peak Pulse Current ICmA 2.0Power Dissipat

SEMICONDUCTORFMMT491TECHNICAL DATA FMMT491 TRANSISTOR (NPN) FEATURES Low equivalent on-resistance 3Marking :491 2MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1Symbol Parameter Value Unit V Collector-Base Voltage 80 V CBO SOT23V Collector-Emitter Voltage 60 V CEOVEBO Emitter-Base Voltage 5 V COLLECTORIC Collector Current 1 A 3ICM Peak Pulse Current

SMD Type TransistorsNPN TransistorsFMMT459 (KMMT459)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features 6V reverse blocking capability Low saturation voltage - 90mV @ 50mA1 2 IC=150mA continuous+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collecto

SMD Type TransistorsNPN TransistorsFMMT493 (KMMT493)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=1A1 2 Collector Emitter Voltage VCEO=100V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1 Complementary to FMMT5931.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

SMD Type TransistorsNPN TransistorsFMMT491 (KMMT491)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VCE(sat) maximum specification improvement Reverse blocking specification improvement1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1C1.Base2.EmitterB3.collectorE Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector

FMMT489SMD Type ICSMD Type TransistorsMedium Power TransistorSOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13FeaturesVery low equivalent on-resistance12+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO 50 VCollector-emitter voltage VCEO 30 VEmitter-base v

FMMT493Features SOT-23 For switching and AF amplifier applications. As complementary type of the PNP transistorFMMT593 is recommended.1.Base 2.Emitter 3.CollectorMarking:493Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value UnitCollector Base Voltage V 120 V CBOCollector Emitter Voltage V 100 V CEOE

FMMT458SMD Type TransistorsHigh Voltage TransistorSOT-23Unit: mm+0.12.9-0.1Features+0.10.4-0.13400 Volt VCEO12+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO 400 VCollector-emitter voltage VCEO 400 VEmitter-base voltage VEBO 5VPeak collector

FMMT491NPN Silicon Epitaxial Planar TransistorFeaturesSOT-23 Low equivalent on-resistance Be complementaty with FMMT5911.Base 2.Emitter 3.CollectorAbsolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value UnitCollector Base Voltage V 80 V CBOCollector Emitter Voltage V 60 V CEOEmitter Base Voltage V 5 V

FMMT413SOT23 NPN silicon planar avalanche transistorSummaryV(BR)CES = 150V, V(BR)CEO = 50V, IUSB = 25ADescriptionThe FMMT413 is a NPN silicon planar bipolar transistor optimized foravalanche mode operation. Tight process control and low inductancepackaging combine to produce high current pulses with fast edges, idealfor laser diode driving.FeaturesC Avalanche mode opera

FMMT493 NPN Transistor Features For switching and AF amplifier applications.SOT-23 (TO-236) As complementary type of the PNP transistorFMMT593 is recommended.1.Base 2.Emitter 3.CollectorMarking:493Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value UnitCollector Base Voltage V 120 V CBOCollector Em

FMMT491NPN Transistor Features Low equivalent on-resistanceSOT-23 (TO-236) Be complementaty with FMMT5911.Base 2.Emitter 3.CollectorMarking: 491Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value UnitCollector Base Voltage V 80 V CBOCollector Emitter Voltage V 60 V CEOEmitter Base Voltage V 5 V

FMMT489NPN Silicon Epitaxial Planar Transistor For switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. SOT-23 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO 25 VEmitter Base Voltage VEBO 6 VCollector Current IC 1 A Po

FMMT491TRANSISTOR (NPN) SOT-23 1BASE 2EMITTER 3COLLECTOR MARKING: 4 9 1MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150