SOT SI I O A A T 00HI H O TA T A SISTO S T 0 ISS O 6 T I D T I T T T T T T T T A SO T A I ATI S T T T IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T T I A HA A T ISTI S a Ta T T T I I IT DITI II V V I V I II i V V I V I i V V I V I II I V V V V T V V V V T i I V V T 8 I V V

August 2009FMMT549PNP Low Saturation TransistorFeatures ThIs device is designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Sourced from process PB.32SuperSOT-231Marking : 5491. Base 2. Emitter 3. CollectorAbsolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitVCEO Collector-Emi

A Product Line ofDiodes IncorporatedFMMT549 / FMMT549A 30V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT23 Features and Benefits Mechanical Data BVCEO > -30V Case: SOT23 Maximum Continuous Collector Current IC = -1A UL Flammability Rating 94V-0 500mW power dissipation Case material: molded Plastic. Complementary type: Moisture Sensitivity: L

A Product Line of Diodes Incorporated FMMT597 300V PNP HIGH VOLTAGE TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > -300V Case: SOT23 IC = -0.2A Continuous Collector Current Case Material: Molded Plastic, Green Molding Compound ICM = -1A Peak Pulse Current UL Flammability Classification Rating 94V-0 Complementary NPN Type: FMMT497 Moisture

SOT SI I O A A T 088S A SI A T A SISTO S T 08 ISS S T T I D T I T 88 T 8 T T T 88 T 8 T 8 iI I A SO T A I ATI S T T 88 T 8 IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T T I A HA A T ISTI S a Ta T 88 T 8 T I I IT DITI II V V I I V I II i V V I I V I II I V V I V V I i I V V I V V I i i V VV I I I

FMMT560Q500V PNP HIGH VOLTAGE TRANSISTOR IN SOT23 Description Mechanical Data This bipolar junction transistor (BJT) has been designed to meet the Case: SOT23 stringent requirements of automotive applications. Case Material: Molded Plastic, Green Molding Compound UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Features

A Product Line ofDiodes IncorporatedFMMT59160V PNP MEDIUM POWER TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > -60V Case: SOT23 IC = -1A High Continuous Collector Current Case Material: molded plastic, Green Molding Compound ICM = -2A Peak Pulse Current UL Flammability Classification Rating 94V-0 RSAT = 295m for a Low Equivalent On-Resistanc

SOT23 PNP SILICON PLANARFMMT555MEDIUM POWER TRANSISTORISSUE 4 AUGUST 2003FEATURES* 150 Volt VCEO* 1 Amp continuous currentEC=IB2=IC/10COMPLEMENTARY TYPE FMMT455tfnsB1000PARTMARKING DETAIL 555800600tdns SOT23ABSOLUTE MAXIMUM RATINGS.400 100PARAMETER SYMBOL VALUE UNIT200 500 0Collector-Base Voltage VCBO -160 V-1Collector-Emitter Vo

A Product Line ofDiodes IncorporatedFMMT591A40V PNP MEDIUM POWER HIGH PERFORMANCE TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > -40V Case: SOT23 IC = -1A High Continuous Current Case Material: Molded Plastic, Green Molding Compound ICM = -2A Peak Pulse Current UL Flammability Classification Rating 94V-0 Low Saturation Voltage VCE(sat)

FMMT593 100V PNP HIGH VOLTAGE TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > -100V Case: SOT23 IC = -1A High Continuous Collector Current Case Material: Molded Plastic, Green Molding Compound ICM = -2A Peak Pulse Current UL Flammability Classification Rating 94V-0 Low Saturation Voltage Moisture Sensitivity: Level 1 per J-STD-020 Excelle

A Product Line ofDiodes IncorporatedFMMT58930V PNP MEDIUM POWER HIGH PERFORMANCE TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > -30V Case: SOT23 Case Material: molded plastic, Green molding compound IC = -1A Continuous Collector Current UL Flammability Classification Rating 94V-0 ICM = -2A Peak Pulse Current Moisture Sensitivity: Level 1 pe

SOT SI I O A A T 0HI H O TA T A SISTO S T ISS O 6 T I D T I T T T T T T T T A SO T A I ATI S T T T IT II V I V 8 V II i V I V V i V I V V i II I Di i i T i T T T T I A HA A T ISTI S a Ta T T T I I IT DITI II V 8 V I V I II i V V I V I i V V I V I II I V V V V T V VV V T i 8 I V V T 8 I V V

SOT SI I O A A T 08 S A SI A T A SISTO T I D T I T 8 T 8 T T T 88A SO T A I ATI S T V IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T T I A HA A T ISTI S a Ta T I IT DITI II I V V I V V I i I V V I II i V V I I i V I i V 8 V I V V V I i 8 I V V T I V V i I V V T i i I V V T II i I I V V T i i

SOT23 NPN SILICON PLANARFMMT5209SMALL SIGNAL TRANSISTORSFMMT5210ISSUE 2 - JULY 1995 T I D T I T EC T BSOT23ABSOLUTE MAXIMUM RATINGS. T T T IT II V I V V II i V I V V i V I V V i II I Di i i i T T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T T T IT DITI I I II I V V I i I V V I II i V V I I i V I

A Product Line ofDiodes Incorporated FMMT558400V PNP HIGH VOLTAGE TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > -400V Case: SOT23 IC = -150mA high Continuous Collector Current Case material: molded plastic. Green molding compound. ICM = -500mA Peak Pulse Current UL Flammability Rating 94V-0 500mW Power Dissipation Moisture Sensitivity:

FMMT560 500V PNP HIGH VOLTAGE TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > -500V Case: SOT23 IC = -150mA high Continuous Collector Current Case Material: Molded Plastic, Green Molding Compound. ICM Up to -500mA Peak Pulse Current UL Flammability Classification Rating 94V-0 Excellent hFE Characteristics up to IC = -100mA Moisture Sensitivity

FMMT596SOT 23 PNP silicon planar high voltage transistorOrdering informationDevice Reel size Tape width Quantity(inches (mm) per reelFMMT596TA 7 8 3,000Device markingCE596CBBPinout - top viewEAbsolute maximum ratingsParameter Symbol Value UnitCollector-base voltage VCBO -220 VCollector-emitter voltage VCEO -200 VEmitter-base voltage VEBO -5 VPeak pulse cu

FMMT591Features Halogen Free. "Green" Device (Note 1) Moisture Sensitivity Level 1PNP Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Plastic-EncapsulateCompliant. See Ordering Information) Maximum Ratings @ 25 TransistorC Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150

FMMT593Features Halogen Free. "Green" Device (Note 1) Moisture Sensitivity Level 1PNP Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Plastic-EncapsulateCompliant. See Ordering Information) Maximum Ratings @ 25C Unless Otherwise SpecifiedTransistor Operating Junction Temperature Range: -55 to +150

FMMT591CSMDimensions in mm (inches). Bipolar PNP Device in a 0.51 0.10 Hermetically sealed LCC1 (0.02 0.004) 0.31rad.(0.012) Ceramic Surface Mount 3Package for High Reliability Applications 211.91 0.10(0.075 0.004)A0.31rad.Bipolar PNP Device. (0.012)3.05 0.13(0.12 0.005)1.40(0.055)1.02 0.10max.VCEO = 80V A =(0.04 0.00

FMMT591DCSMDimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar PNP Devices. A0.236 5rad. (0.009) V = 80V CEO6.22 0.13 A = 1.27 0.13I = 1A C(0.05

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors SOT-23 FMMT591 TRANSISTOR (PNP) FEATURES Low equivalent on-resistance 1. BASE 2. EMITTER Marking :591 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -80 V CBOVCEO Collector-Emitter Voltage -60 V V

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate TransistorsFMMT593 TRANSISTOR (PNP)SO T-23FEATURES Complementary Type FMMT493MARKING:5931. BASEMAXIMUM RATINGS (Ta=25 unless otherwise noted)2. EMITTERSymbol Parameter Value Unit 3. COLLECTORV Collector-Base Voltage -120 V CBOV Collector-Emitter Voltage -100 V CEOV Emitter-Base Vo

www.jscj-elec.com AD-FMMT591 JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-FMMT591 Plastic-Encapsulated Transistor AD-FMMT591 Transistor (PNP) FEATURES Low equivalent on-resistance AEC-Q101 qualified MARKING : 591 Version 1.0 1 / 6 2021-07-01 www.jscj-elec.com AD-FMMT591 MAXIMUM RATINGS (T = 25C unless otherwise specified) j Parameter Symbol Value U

FMMT591TRANSISTOR (PNP) SOT-23 FEATURES Low equivalent on-resistance 1. BASE 2. EMITTER Marking :591 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1 A PC Collector Power Dissipation 5

FMMT593TRANSISTOR (PNP) SOT23 FEATURES Complementary Type FMMT493 MARKING:593 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage -120 V CBOV Collector-Emitter Voltage -100 V CEOV Emitter-Base Voltage -5 V EBOI Collector Current -1 A CPC Collector Power Dissipation 25

FMMT591 SOT-23 Transistor(PNP)SOT-231. BASE 2. EMITTER 3. COLLECTOR FeaturesLow equivalent on-resistance Marking :591 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Conti

FMMT591COLLECTOR3General Purpose Transistor PNP Silicon 3P b Lead(Pb)-Free11BASE2SOT-232EMITTERMaximum RatingsRating Symbol Value UnitCollector-Base Breakdown VoltageV(BR)CEO-60 VCollector-Emitter Breakdown VoltageV(BR)CBO-80 VEmitter-Base Breakdown VoltageV(BR)EBOV-5.0Collector Current IC A-1.0Peak Pulse Current ICmA-2.0Power Dissipat

FMMT593COLLECTOR3General Purpose Transistor PNP Silicon 3P b Lead(Pb)-Free11BASE2SOT-232EMITTERMaximum RatingsRating Symbol Value UnitCollector-Base Breakdown VoltageV(BR)CEO-120 VCollector-Emitter Breakdown VoltageV(BR)CBO-100 VEmitter-Base Breakdown VoltageV(BR)EBOV-5.0Collector Current IC A-1.0Power DissipationPD mW250TA=25CJunc

SMD Type TransistorsPNP TransistorsFMMT560 (KMMT560)SOT-23Unit: mm Features+0.12.9 -0.1+0.1 Collector Current Capability IC=-150mA 0.4 -0.13 Collector Emitter Voltage VCEO=-500V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9-0.11.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO

FMMT591PNP Silicon Epitaxial Planar TransistorFeaturesSOT-23 Low equivalent on-resistance Be complementary with FMMT4911.Base 2.Emitter 3.CollectorAbsolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value UnitCollector Base Voltage -V 80 V CBOCollector Emitter Voltage -V 60 V CEOEmitter Base Voltage -V 5 V

FMMT591 PNP Transistor Features Low equivalent on-resistanceSOT-23 (TO-236) Be complementary with FMMT4911.Base 2.Emitter 3.CollectorMarking: 591Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value UnitCollector Base Voltage -V 80 V CBOCollector Emitter Voltage -V 60 V CEOEmitter Base Voltage -V 5

FMMT593 PNP Transistor Features For switching and AF amplifier applications.SOT-23 (TO-236) As complementary type of the NPN transistorFMMT493 is recommended.1.Base 2.Emitter 3.CollectorMarking : 593Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value UnitCollector Base Voltage -V 120 V CBOCollector

FMMT589PNP Silicon Epitaxial Planar Transistor For switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. As complementary type the NPN transistor 1.BASE 2.EMITTER 3.COLLECTORSOT-23 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage