Справочник транзисторов. FMMT593

 

Биполярный транзистор FMMT593 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: FMMT593
   Маркировка: 593
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.5 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 120 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 50 MHz
   Ёмкость коллекторного перехода (Cc): 5 pf
   Статический коэффициент передачи тока (hfe): 50
   Корпус транзистора: TO236

 Аналоги (замена) для FMMT593

 

 

FMMT593 Datasheet (PDF)

 ..1. Size:402K  diodes
fmmt593.pdf

FMMT593
FMMT593

FMMT593 100V PNP HIGH VOLTAGE TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > -100V Case: SOT23 IC = -1A High Continuous Collector Current Case Material: Molded Plastic, Green Molding Compound ICM = -2A Peak Pulse Current UL Flammability Classification Rating 94V-0 Low Saturation Voltage Moisture Sensitivity: Level 1 per J-STD-020 Excelle

 ..2. Size:715K  mcc
fmmt593.pdf

FMMT593
FMMT593

FMMT593Features Halogen Free. "Green" Device (Note 1) Moisture Sensitivity Level 1PNP Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Plastic-EncapsulateCompliant. See Ordering Information) Maximum Ratings @ 25C Unless Otherwise SpecifiedTransistor Operating Junction Temperature Range: -55 to +150

 ..3. Size:778K  jiangsu
fmmt593.pdf

FMMT593
FMMT593

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate TransistorsFMMT593 TRANSISTOR (PNP)SO T-23FEATURES Complementary Type FMMT493MARKING:5931. BASEMAXIMUM RATINGS (Ta=25 unless otherwise noted)2. EMITTERSymbol Parameter Value Unit 3. COLLECTORV Collector-Base Voltage -120 V CBOV Collector-Emitter Voltage -100 V CEOV Emitter-Base Vo

 ..4. Size:442K  htsemi
fmmt593.pdf

FMMT593

FMMT593TRANSISTOR (PNP) SOT23 FEATURES Complementary Type FMMT493 MARKING:593 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage -120 V CBOV Collector-Emitter Voltage -100 V CEOV Emitter-Base Voltage -5 V EBOI Collector Current -1 A CPC Collector Power Dissipation 25

 ..5. Size:267K  wietron
fmmt593.pdf

FMMT593
FMMT593

FMMT593COLLECTOR3General Purpose Transistor PNP Silicon 3P b Lead(Pb)-Free11BASE2SOT-232EMITTERMaximum RatingsRating Symbol Value UnitCollector-Base Breakdown VoltageV(BR)CEO-120 VCollector-Emitter Breakdown VoltageV(BR)CBO-100 VEmitter-Base Breakdown VoltageV(BR)EBOV-5.0Collector Current IC A-1.0Power DissipationPD mW250TA=25CJunc

 ..6. Size:1255K  pjsemi
fmmt593.pdf

FMMT593
FMMT593

FMMT593 PNP Transistor Features For switching and AF amplifier applications.SOT-23 (TO-236) As complementary type of the NPN transistorFMMT493 is recommended.1.Base 2.Emitter 3.CollectorMarking : 593Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value UnitCollector Base Voltage -V 120 V CBOCollector

 8.1. Size:611K  diodes
fmmt597.pdf

FMMT593
FMMT593

A Product Line of Diodes Incorporated FMMT597 300V PNP HIGH VOLTAGE TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > -300V Case: SOT23 IC = -0.2A Continuous Collector Current Case Material: Molded Plastic, Green Molding Compound ICM = -1A Peak Pulse Current UL Flammability Classification Rating 94V-0 Complementary NPN Type: FMMT497 Moisture

 8.2. Size:470K  diodes
fmmt591.pdf

FMMT593
FMMT593

A Product Line ofDiodes IncorporatedFMMT59160V PNP MEDIUM POWER TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > -60V Case: SOT23 IC = -1A High Continuous Collector Current Case Material: molded plastic, Green Molding Compound ICM = -2A Peak Pulse Current UL Flammability Classification Rating 94V-0 RSAT = 295m for a Low Equivalent On-Resistanc

 8.3. Size:336K  diodes
fmmt591a.pdf

FMMT593
FMMT593

A Product Line ofDiodes IncorporatedFMMT591A40V PNP MEDIUM POWER HIGH PERFORMANCE TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > -40V Case: SOT23 IC = -1A High Continuous Current Case Material: Molded Plastic, Green Molding Compound ICM = -2A Peak Pulse Current UL Flammability Classification Rating 94V-0 Low Saturation Voltage VCE(sat)

 8.4. Size:183K  diodes
fmmt596.pdf

FMMT593
FMMT593

FMMT596SOT 23 PNP silicon planar high voltage transistorOrdering informationDevice Reel size Tape width Quantity(inches (mm) per reelFMMT596TA 7 8 3,000Device markingCE596CBBPinout - top viewEAbsolute maximum ratingsParameter Symbol Value UnitCollector-base voltage VCBO -220 VCollector-emitter voltage VCEO -200 VEmitter-base voltage VEBO -5 VPeak pulse cu

 8.5. Size:859K  mcc
fmmt591.pdf

FMMT593
FMMT593

FMMT591Features Halogen Free. "Green" Device (Note 1) Moisture Sensitivity Level 1PNP Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Plastic-EncapsulateCompliant. See Ordering Information) Maximum Ratings @ 25 TransistorC Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150

 8.6. Size:11K  semelab
fmmt591csm.pdf

FMMT593

FMMT591CSMDimensions in mm (inches). Bipolar PNP Device in a 0.51 0.10 Hermetically sealed LCC1 (0.02 0.004) 0.31rad.(0.012) Ceramic Surface Mount 3Package for High Reliability Applications 211.91 0.10(0.075 0.004)A0.31rad.Bipolar PNP Device. (0.012)3.05 0.13(0.12 0.005)1.40(0.055)1.02 0.10max.VCEO = 80V A =(0.04 0.00

 8.7. Size:10K  semelab
fmmt591dcsm.pdf

FMMT593

FMMT591DCSMDimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar PNP Devices. A0.236 5rad. (0.009) V = 80V CEO6.22 0.13 A = 1.27 0.13I = 1A C(0.05

 8.8. Size:973K  jiangsu
fmmt591.pdf

FMMT593
FMMT593

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors SOT-23 FMMT591 TRANSISTOR (PNP) FEATURES Low equivalent on-resistance 1. BASE 2. EMITTER Marking :591 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -80 V CBOVCEO Collector-Emitter Voltage -60 V V

 8.9. Size:715K  jiangsu
ad-fmmt591.pdf

FMMT593
FMMT593

www.jscj-elec.com AD-FMMT591 JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-FMMT591 Plastic-Encapsulated Transistor AD-FMMT591 Transistor (PNP) FEATURES Low equivalent on-resistance AEC-Q101 qualified MARKING : 591 Version 1.0 1 / 6 2021-07-01 www.jscj-elec.com AD-FMMT591 MAXIMUM RATINGS (T = 25C unless otherwise specified) j Parameter Symbol Value U

 8.10. Size:429K  htsemi
fmmt591.pdf

FMMT593
FMMT593

FMMT591TRANSISTOR (PNP) SOT-23 FEATURES Low equivalent on-resistance 1. BASE 2. EMITTER Marking :591 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1 A PC Collector Power Dissipation 5

 8.11. Size:187K  lge
fmmt591.pdf

FMMT593
FMMT593

FMMT591 SOT-23 Transistor(PNP)SOT-231. BASE 2. EMITTER 3. COLLECTOR FeaturesLow equivalent on-resistance Marking :591 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Conti

 8.12. Size:219K  wietron
fmmt591.pdf

FMMT593
FMMT593

FMMT591COLLECTOR3General Purpose Transistor PNP Silicon 3P b Lead(Pb)-Free11BASE2SOT-232EMITTERMaximum RatingsRating Symbol Value UnitCollector-Base Breakdown VoltageV(BR)CEO-60 VCollector-Emitter Breakdown VoltageV(BR)CBO-80 VEmitter-Base Breakdown VoltageV(BR)EBOV-5.0Collector Current IC A-1.0Peak Pulse Current ICmA-2.0Power Dissipat

 8.13. Size:1589K  slkor
fmmt591.pdf

FMMT593
FMMT593

FMMT591PNP Silicon Epitaxial Planar TransistorFeaturesSOT-23 Low equivalent on-resistance Be complementary with FMMT4911.Base 2.Emitter 3.CollectorAbsolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value UnitCollector Base Voltage -V 80 V CBOCollector Emitter Voltage -V 60 V CEOEmitter Base Voltage -V 5 V

 8.14. Size:1358K  pjsemi
fmmt591.pdf

FMMT593
FMMT593

FMMT591 PNP Transistor Features Low equivalent on-resistanceSOT-23 (TO-236) Be complementary with FMMT4911.Base 2.Emitter 3.CollectorMarking: 591Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value UnitCollector Base Voltage -V 80 V CBOCollector Emitter Voltage -V 60 V CEOEmitter Base Voltage -V 5

 8.15. Size:684K  cn shikues
fmmt591.pdf

FMMT593
FMMT593

 8.16. Size:1070K  cn yfw
fmmt591.pdf

FMMT593

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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