FMMT596. Аналоги и основные параметры
Наименование производителя: FMMT596
Маркировка: 596
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.5 W
Макcимально допустимое напряжение коллектор-база (Ucb): 220 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 200 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 150 MHz
Ёмкость коллекторного перехода (Cc): 10 pf
Статический коэффициент передачи тока (hFE): 100
Корпус транзистора: TO236
Аналоги (замена) для FMMT596
- подборⓘ биполярного транзистора по параметрам
FMMT596 даташит
..1. Size:183K diodes
fmmt596.pdf 
FMMT596 SOT 23 PNP silicon planar high voltage transistor Ordering information Device Reel size Tape width Quantity (inches (mm) per reel FMMT596TA 7 8 3,000 Device marking C E 596 C B B Pinout - top view E Absolute maximum ratings Parameter Symbol Value Unit Collector-base voltage VCBO -220 V Collector-emitter voltage VCEO -200 V Emitter-base voltage VEBO -5 V Peak pulse cu
8.1. Size:611K diodes
fmmt597.pdf 
A Product Line of Diodes Incorporated FMMT597 300V PNP HIGH VOLTAGE TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > -300V Case SOT23 IC = -0.2A Continuous Collector Current Case Material Molded Plastic, Green Molding Compound ICM = -1A Peak Pulse Current UL Flammability Classification Rating 94V-0 Complementary NPN Type FMMT497 Moisture
8.2. Size:470K diodes
fmmt591.pdf 
A Product Line of Diodes Incorporated FMMT591 60V PNP MEDIUM POWER TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > -60V Case SOT23 IC = -1A High Continuous Collector Current Case Material molded plastic, Green Molding Compound ICM = -2A Peak Pulse Current UL Flammability Classification Rating 94V-0 RSAT = 295m for a Low Equivalent On-Resistanc
8.3. Size:336K diodes
fmmt591a.pdf 
A Product Line of Diodes Incorporated FMMT591A 40V PNP MEDIUM POWER HIGH PERFORMANCE TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > -40V Case SOT23 IC = -1A High Continuous Current Case Material Molded Plastic, Green Molding Compound ICM = -2A Peak Pulse Current UL Flammability Classification Rating 94V-0 Low Saturation Voltage VCE(sat)
8.4. Size:402K diodes
fmmt593.pdf 
FMMT593 100V PNP HIGH VOLTAGE TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > -100V Case SOT23 IC = -1A High Continuous Collector Current Case Material Molded Plastic, Green Molding Compound ICM = -2A Peak Pulse Current UL Flammability Classification Rating 94V-0 Low Saturation Voltage Moisture Sensitivity Level 1 per J-STD-020 Excelle
8.7. Size:11K semelab
fmmt591csm.pdf 
FMMT591CSM Dimensions in mm (inches). Bipolar PNP Device in a 0.51 0.10 Hermetically sealed LCC1 (0.02 0.004) 0.31 rad. (0.012) Ceramic Surface Mount 3 Package for High Reliability Applications 21 1.91 0.10 (0.075 0.004) A 0.31 rad. Bipolar PNP Device. (0.012) 3.05 0.13 (0.12 0.005) 1.40 (0.055) 1.02 0.10 max. VCEO = 80V A = (0.04 0.00
8.8. Size:10K semelab
fmmt591dcsm.pdf 
FMMT591DCSM Dimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.15 2.29 0.20 1.65 0.13 (0.055 0.006) (0.09 0.008) (0.065 0.005) Applications 2 3 1 4 Dual Bipolar PNP Devices. A 0.23 6 5 rad. (0.009) V = 80V CEO 6.22 0.13 A = 1.27 0.13 I = 1A C (0.05
8.9. Size:973K jiangsu
fmmt591.pdf 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors SOT-23 FMMT591 TRANSISTOR (PNP) FEATURES Low equivalent on-resistance 1. BASE 2. EMITTER Marking 591 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -80 V CBO VCEO Collector-Emitter Voltage -60 V V
8.10. Size:778K jiangsu
fmmt593.pdf 
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors FMMT593 TRANSISTOR (PNP) SO T-23 FEATURES Complementary Type FMMT493 MARKING 593 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage -120 V CBO V Collector-Emitter Voltage -100 V CEO V Emitter-Base Vo
8.11. Size:715K jiangsu
ad-fmmt591.pdf 
www.jscj-elec.com AD-FMMT591 JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-FMMT591 Plastic-Encapsulated Transistor AD-FMMT591 Transistor (PNP) FEATURES Low equivalent on-resistance AEC-Q101 qualified MARKING 591 Version 1.0 1 / 6 2021-07-01 www.jscj-elec.com AD-FMMT591 MAXIMUM RATINGS (T = 25 C unless otherwise specified) j Parameter Symbol Value U
8.12. Size:429K htsemi
fmmt591.pdf 
FMMT591 TRANSISTOR (PNP) SOT-23 FEATURES Low equivalent on-resistance 1. BASE 2. EMITTER Marking 591 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1 A PC Collector Power Dissipation 5
8.13. Size:442K htsemi
fmmt593.pdf 
FMMT593 TRANSISTOR (PNP) SOT 23 FEATURES Complementary Type FMMT493 MARKING 593 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage -120 V CBO V Collector-Emitter Voltage -100 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current -1 A C PC Collector Power Dissipation 25
8.14. Size:187K lge
fmmt591.pdf 
FMMT591 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Low equivalent on-resistance Marking 591 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Conti
8.15. Size:219K wietron
fmmt591.pdf 
FMMT591 COLLECTOR 3 General Purpose Transistor PNP Silicon 3 P b Lead(Pb)-Free 1 1 BASE 2 SOT-23 2 EMITTER Maximum Ratings Rating Symbol Value Unit Collector-Base Breakdown Voltage V(BR)CEO -60 V Collector-Emitter Breakdown Voltage V(BR)CBO -80 V Emitter-Base Breakdown Voltage V(BR)EBO V -5.0 Collector Current IC A -1.0 Peak Pulse Current ICm A -2.0 Power Dissipat
8.16. Size:267K wietron
fmmt593.pdf 
FMMT593 COLLECTOR 3 General Purpose Transistor PNP Silicon 3 P b Lead(Pb)-Free 1 1 BASE 2 SOT-23 2 EMITTER Maximum Ratings Rating Symbol Value Unit Collector-Base Breakdown Voltage V(BR)CEO -120 V Collector-Emitter Breakdown Voltage V(BR)CBO -100 V Emitter-Base Breakdown Voltage V(BR)EBO V -5.0 Collector Current IC A -1.0 Power Dissipation PD mW 250 TA=25 C Junc
8.17. Size:1589K slkor
fmmt591.pdf 
FMMT591 PNP Silicon Epitaxial Planar Transistor Features SOT-23 Low equivalent on-resistance Be complementary with FMMT491 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage -V 80 V CBO Collector Emitter Voltage -V 60 V CEO Emitter Base Voltage -V 5 V
8.18. Size:1358K pjsemi
fmmt591.pdf 
FMMT591 PNP Transistor Features Low equivalent on-resistance SOT-23 (TO-236) Be complementary with FMMT491 1.Base 2.Emitter 3.Collector Marking 591 Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage -V 80 V CBO Collector Emitter Voltage -V 60 V CEO Emitter Base Voltage -V 5
8.19. Size:1255K pjsemi
fmmt593.pdf 
FMMT593 PNP Transistor Features For switching and AF amplifier applications. SOT-23 (TO-236) As complementary type of the NPN transistor FMMT493 is recommended. 1.Base 2.Emitter 3.Collector Marking 593 Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage -V 120 V CBO Collector
Другие транзисторы: FMMT5856, FMMT5857, FMMT5858, FMMT589, FMMT591, FMMT5910, FMMT591A, FMMT593, D667, FMMT597, FMMT6076, FMMT614, FMMT617, FMMT618, FMMT619, FMMT624, FMMT625
