Биполярный транзистор FMMT614 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: FMMT614
Маркировка: 614
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.5 W
Макcимально допустимое напряжение коллектор-база (Ucb): 120 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 150 °C
Ёмкость коллекторного перехода (Cc): 6 pf
Статический коэффициент передачи тока (hfe): 7000
Корпус транзистора: TO236
FMMT614 Datasheet (PDF)
fmmt619.pdf
A Product Line ofDiodes IncorporatedFMMT619 50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > 50V Case: SOT23 IC = 2A Continuous Collector Current Case Material: molded plastic, Green molding compound 625mW power dissipation UL Flammability Classification Rating 94V-0 Low Saturation Voltage VCE(sat)
fmmt618.pdf
A Product Line ofDiodes IncorporatedFMMT618 20V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > 20V Case: SOT23 IC = 2.5A Continuous Collector Current Case Material: molded plastic, Green molding compound RCE(SAT) = 50m for a low equivalent On-Resistance UL Flammability Classification Rating 94V-0 625mW Power
fmmt617.pdf
A Product Line ofDiodes IncorporatedFMMT61715V NPN LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > 15V Case: SOT23 IC = 3A high Continuous Collector Current Case Material: molded plastic, Green molding compound ICM = 12A Peak Pulse Current UL Flammability Classification Rating 94V-0 RCE(sat) = 50m for a low equivalent On-Re
fmmt617 fmmt618 fmmt619 fmmt624 fmmt625.pdf
SuperSOTFMMT617 FMMT618SOT23 NPN SILICON POWER FMMT619 FMMT624FMMT625(SWITCHING) TRANSISTORSISSUE 3 - NOVEMBER 1995 T * 625mW POWER DISSIPATION* IC CONT 3AE I C II i i T I I i V I 8 V T B I i I i RCE(sat)D VI T T T I RCE(sat) T T 50m at 3A T 8 T 8 8 50m at 2A T T 75m at 2A T T T ABSOLUTE MAXIMUM RATINGS. T T T T T T 8 IT II V I V V II
fmmt618.pdf
FMMT618Features Halogen Free. "Green" Device (Note 1) Moisture Sensitivity Level 1NPN Silicon Planar Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSHigh Performance Compliant. See Ordering Information)Maximum Ratings @ 25C Unless Otherwise SpecifiedTransistor Operating Junction Temperature Range: -55
fmmt619.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD J C T SOT-23 Plastic-Encapsulate Transistors FMMT619 TRANSISTOR (NPN) SOT-23 FEATURE 3 Low Saturation Voltage 1. BASE MARKING:619 1 2. EMITTER 2 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emi
fmmt618.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate TransistorsSOT23 FMMT TRANSISTOR ( )FEATURE Extremely low saturation voltage1. BASE Complementary PN type: FMMT 182. EMITTER3. COLLECTORAPPLICATION Gate Driving MOSFETs and IGBTs DC-DC converters Charging circuit Power switchesMARKING: 18 MAXIMUM RATINGS (Ta=25 unless othe
fmmt617ta.pdf
SMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD Type CSMD Type orSMD Type IorSMD Type ICSMD Type ICSM
fmmt619.pdf
SMD Type TransistorsNPN TransistorsFMMT619 SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=50V1 2 Complementary to FMMT720+0.1+0.050.95-0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector
fmmt618.pdf
SMD Type TransistorsNPN TransistorsFMMT618SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=2.5A Collector Emitter Voltage VCEO=20V Complementary to FMMT7181 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector
fmmt617.pdf
SMD Type TransistorsNPN TransistorsFMMT617SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=3A Collector Emitter Voltage VCEO=15V Complementary to FMMT7171 2+0.1+0.050.95 -0.1 0.1-0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector -
fmmt619.pdf
FMMT619TRANSISTOR (NPN) SOT-23 MARKING:6191BASE 2EMITTER 3COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.8 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150
fmmt617.pdf
FMMT617NPN Transistor Features High Continuous Collector CurrentSOT-23 Extremely Low Saturation Voltage1.Base 2.Emitter 3.CollectorMarking : 617Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value UnitCollector Base Voltage V 15 V CBOCollector Emitter Voltage V 15 V CEOEmitter Base Voltage V 5 V E
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050