SuperSOT T T 8 T 0 T SOT Si i O O T S iT Hi T A SiSTO SiSS 6 T * 625mW POWER DISSIPATIONi O T AI T I II i i T I I i V I V T i i I I i I i a 8 D VI T T T I a T T a A T 8 T 8 8 a A T T 6 a A T T T A SO T A i ATi S T T T T T T 8 IT II V I V V II i V I V V i V I V V I I on inuou oII o u n i A I o Di i a ion a Ta o

A Product Line ofDiodes IncorporatedFMMT717 12V PNP SILICON LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > -12V Case: SOT23 IC = -2.5A Continuous Collector Current Case Material: molded plastic, Green molding compound ICM = -10A Peak Pulse Current UL Flammability Classification Rating 94V-0 Low Saturation Voltage E.g. -17mV M

SMD Type TransistorsPNP TransistorsFMMT717SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=-2.5A Collector Emitter Voltage VCEO=-12V Complementary to FMMT6171 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collec

A Product Line ofDiodes IncorporatedFMMT718 20V PNP SILICON LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data Case: SOT23 BVCEO > -20V Case Material: molded plastic, Green molding compound IC = -1.5A Continuous Collector Current UL Flammability Classification Rating 94V-0 ICM = -6A Peak Pulse Current Moisture Sensitivity: Level 1

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate TransistorsSOT23 FMMT TRANSISTOR (PNP)FEATURE Extremely low saturation voltage1. BASE Complementary NPN type: FMMT6182. EMITTER3. COLLECTORAPPLICATION Gate Driving MOSFETs and IGBTs DC-DC converters Charging circuit Power switchesMARKING: 718 MAXIMUM RATINGS (Ta=25 unless othe

SMD Type orSMD Type TransistICsPNP TransistorsFMMT718 (KMMT718)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13Features625mW power dissipation.IC CONT 2.5A.1 2IC up to 10A peak pulse current.+0.1+0.050.95-0.1 0.1-0.01Excellent hfe characteristics up to 10A (pulsed). +0.11.9-0.1Extremely low saturation voltage e.g. 10mV typ..Exhibits extremely low equivalent on