Биполярный транзистор 2SB1507 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SB1507
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 40 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 7 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 10 MHz
Статический коэффициент передачи тока (hfe): 30
Корпус транзистора: TO3PML
2SB1507 Datasheet (PDF)
2sb1507.pdf
isc Silicon PNP Power Transistor 2SB1507DESCRIPTIONLow Collector Saturation Voltage:V = -0.4(V)(Max)@I = -4ACE(sat) CGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SD2280Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers,high-speed inverters,converters.ABSOLUTE MAXIMUM
2sb1509 2sd2282.pdf
Ordering number:EN3715PNP/NPN Epitaxial Planar Silicon Transistors2SB1509/2SD2282High-Current Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters. unit:mm2039AFeatures [2SB1509/2SD2282] Low collector-to-emitter saturation voltage :VCE(sat)=0.5V max. Wide ASO and highly registant to breakdown. Micaless package
2sb1502.pdf
Power Transistors2SB1502Silicon PNP epitaxial planar type DarlingtonFor power amplificationUnit: mm 3.3 0.220.0 0.5 5.0 0.3Complementary to 2SD22753.0FeaturesOptimum for 55W HiFi outputHigh foward current transfer ratio hFE: 5000 to 300001.5Low collector to emitter saturation voltage VCE(sat):
2sb1504.pdf
Power Transistors2SB1504Silicon PNP epitaxial planar type darlingtonUnit: mm7.50.2 4.50.2For power switching High forward current transfer ratio hFE High-speed switching0.650.1 0.850.1 Allowing automatic insertion with radial taping 0.8 C 0.8 C1.00.10.70.1 Absolute Maximum Ratings Ta = 25C0.70.11.150.21.150.2Parameter Symbol Rating
2sb1503.pdf
Power Transistors2SB1503Silicon PNP epitaxial planar type DarlingtonFor power amplificationUnit: mm 3.3 0.220.0 0.5 5.0 0.3Complementary to 2SD22763.0FeaturesOptimum for 110W HiFi outputHigh foward current transfer ratio hFE: 5000 to 300001.5Low collector to emitter saturation voltage VCE(sat):
2sb1508.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1508 DESCRIPTION With TO-3PML package Low collector saturation voltage Complement to type 2SD2281 Wide area of safe operation APPLICATIONS For use in relay drivers ,high-speed Inverters,converters PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 Emitter
2sb1502.pdf
isc Silicon PNP Darlington Power Transistor 2SB1502DESCRIPTIONHigh DC Current Gain-: h = 5000(Min)@I = -4AFE CLow-Collector Saturation Voltage-: V = -2.5V(Max.)@I = -4ACE(sat) CComplement to Type 2SD2275Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsOptimum for 55W HiFi o
2sb1509.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1509 DESCRIPTION Low Collector Saturation Voltage :VCE(sat)= -0.5(V)(Max)@IC= -8A Good Linearity of hFE Wide Area of Safe Operation Complement to Type 2SD2282 APPLICATIONS Designed for relay drivers,high-speed inverters,converters. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARA
2sb1503.pdf
isc Silicon PNP Darlington Power Transistor 2SB1503DESCRIPTIONHigh DC Current Gain-: h = 5000(Min)@I = -7AFE CLow-Collector Saturation Voltage-: V = -2.5V(Max.)@I = -7ACE(sat) CComplement to Type 2SD2276Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsOptimum for 110W HiFi
2sb1508.pdf
isc Silicon PNP Power Transistor 2SB1508DESCRIPTIONLow Collector Saturation Voltage:V = -0.5(V)(Max)@I = -6ACE(sat) CGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SD2281Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers,high-speed inverters,converters.ABSOLUTE MAXIMUM
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050