2SB1478. Аналоги и основные параметры
Наименование производителя: 2SB1478
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 60 W
Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 8 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Статический коэффициент передачи тока (hFE): 2000
Корпус транзистора: TO247
Аналоги (замена) для 2SB1478
- подборⓘ биполярного транзистора по параметрам
2SB1478 даташит
..2. Size:236K inchange semiconductor
2sb1478.pdf 
isc Silicon PNP Darlington Power Transistor 2SB1478 DESCRIPTION High DC Current Gain- h = 2000(Min)@ I = -2A FE C Low Collector Saturation Voltage- V = -2.0V(Max.) @I = 5A CE(sat) C Complement to Type 2SD2237 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power linear and switching applications. ABSOLUTE MA
8.3. Size:53K rohm
2sb1474.pdf 
2SB1474 Transistor Power Transistor (-80V, -4A) 2SB1474 Features External dimensions (Units mm) 1) Darlington connection for a high hFE. 2) Built-in resistor between base and emitter. 5.5 1.5 3) Built-in damper doide. 0.9 C0.5 Absolute maximum ratings (Ta=25 C) 0.8Min. (1) Base(Gate) 1.5 2.5 (2) Collector(Drain) ROHM CPT3 9.5 Parameter Symbol Limits Unit (3) Emitter(Sour
8.4. Size:95K panasonic
2sb1470.pdf 
Power Transistors 2SB1470 Silicon PNP triple diffusion planar type darlington Unit mm 20.0 0.5 5.0 0.3 For power amplification (3.0) Complementary to 2SD2222 3.3 0.2 Features Optimum for 120 W HiFi output (1.5) High forward current transfer ratio hFE (1.5) Low collector-emitter saturation voltage VCE(sat) 2.0 0.3 2.7 0.3 3.0 0.3 1.0 0.2 0.6 0.2
8.6. Size:1107K kexin
2sb1475.pdf 
SMD Type Transistors PNP Transistors 2SB1475 Features Super Miniature Package Low collector-emitter saturation voltage High DC Current 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -25 Collector - Emitter Voltage VCEO -16 V Emitter - Base Voltage VEBO -6 Collector Current - Co
8.7. Size:219K inchange semiconductor
2sb1477.pdf 
isc Silicon PNP Power Transistor 2SB1477 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min.) (BR)CEO Wide Area of Safe Operation Complement to Type 2SD2236 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for driver and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
8.8. Size:204K inchange semiconductor
2sb1470.pdf 
isc Silicon PNP Darlington Power Transistor 2SB1470 DESCRIPTION High forward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplification Optimum for 120W HiFi output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR
Другие транзисторы: 2SB1412-P, FMMTA20, 2SB1550, FMMTA20R, 2SB1507, FMMTA42, FMMTA42R, FMMTA43, S8550, FMMTA43R, FMMTA55, FMMTA55R, FMMTA56, FMMTA56R, FMMTA63, FMMTA64, FMMTA70
