FZT951 Green 60V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > -60V Case: SOT223 IC = -5A High Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound. ICM = -15A Peak Pulse Current UL Flammability Rating 94V-0 Low Saturation Voltage VCE(SAT)

SMD Type TransistorsPNP TransistorsFZT951 (KZT951)Unit:mmSOT-2236.500.23.000.1 Features 4 Collector Current Capability IC=-5A Collector Emitter Voltage VCEO=-60V Complementary to FZT8511 2 30.2502.30 (typ)Gauge Plane1.Base 2.Collector0.700.13.Emitter4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rati

GreenFZT958 400V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data Case: SOT223 BVCEO > -400V Case Material: Molded Plastic. Green Molding Compound. UL IC = -0.5A High Continuous Collector Current Flammability Rating 94V-0 ICM = -1.5A Peak Pulse Current Moisture Sensitivity: Level 1 per J-STD-020 Low Saturation Voltage VCE(SAT

A Product Line ofDiodes IncorporatedGreen FZT953 100V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > -100V Case: SOT223 IC = -5A High Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound; ICM = -10A Peak Pulse Current UL Flammability Rating 94V-0 Low Saturation Voltage VCE(sat)

FZT955 Green 140V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > -140V Case: SOT223 IC = -4A High Continuous Collector Current Case material: Molded Plastic. Green Molding Compound; ICM = -10A Peak Pulse Current UL Flammability Rating 94V-0 Low Saturation Voltage VCE(sat)

SOT223 PNP SILICON PLANAR HIGH CURRENTFZT955(HIGH PERFORMANCE) TRANSISTORSFZT956ISSUE 3 MARCH 2005FEATURES* 4 Amps continuous current (10 Amps peak current)C* Very low saturation voltages* Excellent gain characteristics specified up to 3 AmpsEPARTMARKING DETAILS DEVICE TYPE IN FULLCCOMPLEMENTARY TYPES FZT955 - FZT855BFZT956 - N/AABSOLUTE MAXIMUM RATIN

FZT956 Green 200V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > -200V Case: SOT223 IC = -2A High Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound. IC = -5A Peak Pulse Current UL Flammability Rating 94V-0 Low Saturation Voltage VCE(SAT)

SOT223 PNP SILICON PLANAR HIGH CURRENTFZT957(HIGH PERFORMANCE) TRANSISTORSFZT958ISSUE 3 - JANUARY 1996 T i C V I i I II i i i i i E T T T T8 C T 8 B T I D T I D VI T I ABSOLUTE MAXIMUM RATINGS. T T T 8 IT II V I V V II i V I V V i V I V V I I i II I Di i i T 3W i T T T T i i i i i i i i I i I i i i 8 FZT957ELECTRICAL CHARAC

M C CRMicro Commercial Components Micro Commercial Components20736 Marilla Street ChatsworthCA 91311 FZT955Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designatesRoHS Compliant. See ordering information)PNP High Voltage Epoxy meets UL 94 V-0 flammability ratingPlastic-Encapsulate Moisture Sensitivity Le

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-223(8R) Plastic-Encapsulate TransistorsFZT955 TRANSISTOR (PNP)SOT-223 FEATURES High Voltage Low saturation voltages1. BASE2. COLLECTORMARKING: ZT9553. EMITTERMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -180 V CBOV Collector-Emitter Voltage -140 V

SMD Type TransistorsPNP TransistorsFZT958 (KZT958)Unit:mmSOT-2236.500.23.000.14 Features Collector Current Capability IC=-0.5A Collector Emitter Voltage VCEO=-400V1 2 30.2502.30 (typ)0.84 (max)Gauge Plane0.66 (min)1.Base 2.Collector3.Emitter4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Col

SMD Type TransistorsPNP TransistorsFZT957 (KZT957)Unit:mmSOT-2236.500.23.000.1 Features 4 Collector Current Capability IC=-1A Collector Emitter Voltage VCEO=-300V1 2 30.2502.30 (typ)0.84 (max)Gauge Plane0.66 (min)1.Base 2.Collector3.Emitter4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collec

SMD Type TransistorsPNP TransistorsFZT953 (KZT953)Unit:mmSOT-2236.500.23.000.14 Features Collector Current Capability IC=-5A Collector Emitter Voltage VCEO=-100V Complementary to FZT8531 2 30.2502.30 (typ)Gauge Plane1.Base 2.Collector0.700.13.Emitter4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Ra

SMD Type TransistorsPNP TransistorsFZT955 (KZT955)Unit:mmSOT-2236.500.23.000.1 Features4 Collector Current Capability IC=-4A Collector Emitter Voltage VCEO=-140V Very low saturation voltages1 2 3 Complementary to FZT8550.2502.30 (typ)0.84 (max)Gauge Plane0.66 (min)1.Base 2.Collector3.Emitter4.60 (typ) 4.Collector Absolute

SMD Type TransistorsPNP TransistorsFZT956 (KZT956)Unit:mmSOT-2236.500.23.000.1 Features4 Collector Current Capability IC=-2A Collector Emitter Voltage VCEO=-200V Very low saturation voltages1 2 3 Excellent gain characteristics specified up to 3 A0.2502.30 (typ)0.84 (max)Gauge Plane0.66 (min)1.Base 2.Collector3.Emitter4.60 (typ)

www.msksemi.comFZT955-MSSemiconductor CompianceSemiconductor CompiancePNP TransistorsSOT-223 Features11. BASE Collector Current Capability IC=-4A22. COLLECTOR Collector Emitter Voltage VCEO=-140V33. EMITTER Very low saturation voltages Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -180 Collector - Em