Справочник транзисторов. 2N3749

 

Биполярный транзистор 2N3749 - описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2N3749

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 30 W

Макcимально допустимое напряжение коллектор-база (Ucb): 100 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 8 V

Макcимальный постоянный ток коллектора (Ic): 5 A

Предельная температура PN-перехода (Tj): 200 °C

Граничная частота коэффициента передачи тока (ft): 40 MHz

Ёмкость коллекторного перехода (Cc): 150 pf

Статический коэффициент передачи тока (hfe): 40

Корпус транзистора: MT38-1

Аналоги (замена) для 2N3749

 

 

2N3749 Datasheet (PDF)

1.1. 2n3749 2n2880.pdf Size:64K _microsemi

2N3749
2N3749

TECHNICAL DATA PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/315 Devices Qualified Level JAN 2N2880 2N3749 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol Value Units Collector-Emitter Voltage 80 Vdc VCEO Collector-Base Voltage 110 Vdc VCBO Emitter-Base Voltage 8.0 Vdc VEBO Base Current I 0.5 Adc B Collector Current 5.0 Adc IC Total Power Dissipation @

5.1. 2n373 2n374 2n456 2n457 2n497 2n544 2n561 2n578 2n579 2n580.pdf Size:317K _rca

2N3749

5.2. 2n3740r.pdf Size:10K _upd

2N3749

2N3740R Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250) Metal Package. 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. Bipolar PNP Device. 1 2 VCEO = 60V IC = 4A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci

 5.3. 2n3741smd.pdf Size:32K _upd

2N3749
2N3749

2N3741 SMD SEME LAB MECHANICAL DATA MEDIUM POWER PNP Dimensions in mm SILICON POWER TRANSISTOR •LOW SATURATION VOLTAGE •HIGH GAIN FEATURES • Hermetically sealed Surface Mount Package. • Small Footprint - efficient use of PCB space. • Lightweight

5.4. 2n3741a.pdf Size:62K _microsemi

2N3749
2N3749

7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 2N3741A APPLICATIONS: Drivers Switches Medium-Power Amplifiers FEATURES: Medium Power Low Saturation Voltage: 0.6 VCE(sat) @ IC = 1.0 Amp High Gain Characteristics: hFE @ IC = 250 mA: 30-100 PNP Transistors Excellent Safe Area Limits Low Collector Cutoff Current: 100 n

 5.5. 2n3743 2n4930 2n4931.pdf Size:55K _microsemi

2N3749
2N3749

TECHNICAL DATA PNP HIGH VOLTAGE SILICON TRANSISTOR Qualified per MIL-PRF-19500/397 Devices Qualified Level JAN, JANTX 2N3743 2N4930 2N4931 JANTXV MAXIMUM RATINGS Ratings Sym 2N3743 2N4930 2N4931 Unit Collector-Emitter Voltage 300 200 250 Vdc VCEO Collector-Base Voltage 300 200 250 Vdc VCBO Emitter-Base Voltage 5.0 Vdc VEBO Collector Current 200 mAdc IC Total Pow

5.6. 2n3740.pdf Size:62K _microsemi

2N3749
2N3749

7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 2N3740 APPLICATIONS: Drivers Switches Medium-Power Amplifiers FEATURES: Medium Power Low Saturation Voltage: 0.6 VCE(sat) @ IC = 1.0 Amp High Gain Characteristics: hFE @ IC = 250 mA: 30-100 PNP Transistors Excellent Safe Area Limits Complementary to NPN 2N3766 (2N3740)

5.7. 2n3741.pdf Size:62K _microsemi

2N3749
2N3749

7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 2N3741 APPLICATIONS: Drivers Switches Medium-Power Amplifiers FEATURES: Medium Power Low Saturation Voltage: 0.6 VCE(sat) @ IC = 1.0 Amp High Gain Characteristics: hFE @ IC = 250 mA: 30-100 PNP Transistors Excellent Safe Area Limits Complementary to NPN 2N3767 (2N3741)

5.8. 2n3740a.pdf Size:62K _microsemi

2N3749
2N3749

7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 2N3740A APPLICATIONS: Drivers Switches Medium-Power Amplifiers FEATURES: Medium Power Low Saturation Voltage: 0.6 VCE(sat) @ IC = 1.0 Amp High Gain Characteristics: hFE @ IC = 250 mA: 30-100 PNP Transistors Excellent Safe Area Limits Low Collector Cutoff Current: 100 n

5.9. 2n3740 3741.pdf Size:196K _inchange_semiconductor

2N3749
2N3749

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N3740/3741 DESCRIPTION ·DC Current Gain- : hFE= 30-100@IC= -250mA ·Wide Area of Safe Operation ·Collector-Emitter Saturation Voltage- : VCE(sat)= -0.6 V(Max)@ IC = -1A APPLICATIONS ·Designed for use as drivers, switches and medium-power amplifier and general purpose applications ABSOLUTE

5.10. 2n37402n3741.pdf Size:126K _inchange_semiconductor

2N3749
2N3749

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N3740 2N3741 DESCRIPTION Ў¤ With TO-66 package Ў¤ Excellent safe area limits Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ Suitable for use in as drivers,switches and medium-power amplifier and applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-66) and symbol Col

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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