KN3905S - Даташиты. Аналоги. Основные параметры

SEMICONDUCTOR KN3905S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES L B L DIM MILLIMETERS Low Leakage Current _ + 2.93 0.20 A B 1.30+0.20/-0.15 ICEX=-50nA(Max.) ; @VCE=-30V, VEB=-3V. C 1.30 MAX 2 Low Saturation Voltage 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 VCE(sat)=-0.4V(Max.) ; IC=-50mA, IB=-5mA. 1 G

SEMICONDUCTOR KN3906S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES L B L DIM MILLIMETERS Low Leakage Current _ + 2.93 0.20 A B 1.30+0.20/-0.15 ICEX=-50nA(Max.) ; @VCE=-30V, VEB=-3V. C 1.30 MAX 2 Low Saturation Voltage 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 VCE(sat)=-0.4V(Max.) ; IC=-50mA, IB=-5mA. 1 G 1.

SEMICONDUCTOR KN3904 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Low Leakage Current ICEX=50nA(Max.), @VCE=30V, VEB=3V. N DIM MILLIMETERS Low Saturation Voltage A 4.70 MAX E K VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. B 4.80 MAX G C 3.70 MAX D Complementary to KN3906. D 0.45 E 1.00 F 1.27 G 0.85 H 0

SEMICONDUCTOR KN3906 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Low Leakage Current ICEX=-50nA(Max.), @VCE=-30V, VEB=-3V. N DIM MILLIMETERS Low Saturation Voltage A 4.70 MAX E K VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. B 4.80 MAX G C 3.70 MAX D Complementary to KN3904. D 0.45 E 1.00 F 1.27 G 0.8

SEMICONDUCTOR KN3904S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES L B L DIM MILLIMETERS Low Leakage Current _ + 2.93 0.20 A B 1.30+0.20/-0.15 ICEX=50nA(Max.) ; @VCE=30V, VEB=3V. C 1.30 MAX 2 Low Saturation Voltage 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 VCE(sat)=0.3V(Max.) ; IC=50mA, IB=5mA. 1 G 1.90 H