Справочник транзисторов. KSA1150

 

Биполярный транзистор KSA1150 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: KSA1150
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.3 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 40
   Корпус транзистора: TO92

 Аналоги (замена) для KSA1150

 

 

KSA1150 Datasheet (PDF)

 ..1. Size:40K  fairchild semi
ksa1150.pdf

KSA1150
KSA1150

KSA1150Low Frequency Power Amplifier Collector Dissipation : PC = 300mW Complement to KSC2710TO-92S11.Emitter 2. Collector 3. BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage -40 VVCEO Collector-Emitter Voltage -20 VVEBO Emitter-Base Voltage -5 VIC Collector Curr

 8.1. Size:65K  fairchild semi
ksa1156.pdf

KSA1150
KSA1150

KSA1156High Voltage SwitchingLow Power Switching Regulator DC-DC Converter High Breakdown Voltage Low Collector Saturation Voltage High Speed SwitchingTO-12611. Emitter 2.Collector 3.BasePNP Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage - 400 VVCEO Collector-Emitter Volta

 9.1. Size:66K  fairchild semi
ksa1142.pdf

KSA1150
KSA1150

KSA1142Audio Frequency Power Amplifier High Freqency Power Amplifier Complement to KSC2682TO-12611. Emitter 2.Collector 3.BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage - 180 VVCEO Collector-Emitter Voltage - 180 VVEBO Emitter-Base Voltage - 5 VIC Collector Curren

 9.2. Size:41K  fairchild semi
ksa1175.pdf

KSA1150
KSA1150

KSA1175Low Frequency Amplifier Collector-Base Voltage : VCBO= -60V Complement to KSC2785TO-92S11.Emitter 2. Collector 3. BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage -60 VVCEO Collector-Emitter Voltage -50 VVEBO Emitter-Base Voltage -5 VIC Collector Current -

 9.3. Size:58K  fairchild semi
ksa1182.pdf

KSA1150
KSA1150

KSA1182Low Frequency Power Amplifier Complement to KSC285932SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage -35 VVCEO Collector-Emitter Voltage -30 VVEBO Emitter-Base Voltage -5 VIC Collector Current -500 mAPC Collector Power D

 9.4. Size:46K  fairchild semi
ksa1174.pdf

KSA1150
KSA1150

KSA1174Audio Frequency Low Noise Amplifier Complement to KSC2784TO-92S11.Emitter 2. Collector 3. BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage -120 VVCEO Collector-Emitter Voltage -120 VVEBO Emitter-Base Voltage -5 VIC Collector Current -50 mAIB Base Current -10

 9.5. Size:218K  onsemi
ksa1142.pdf

KSA1150
KSA1150

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.6. Size:606K  jiangsu
ad-ksa1182.pdf

KSA1150
KSA1150

www.jscj-elec.com AD-KSA1182 series JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-KSA1182 series Plastic-Encapsulated Transistor AD-KSA1182 series Transistor (PNP) FEATURES Complementary to AD-KSC2859 AEC-Q101 qualified Version 1.0 1 / 5 2021-07-01 www.jscj-elec.com AD-KSA1182 series MAXIMUM RATINGS (T = 25C unless otherwise specified) j Parameter Symbol

 9.7. Size:511K  jiangsu
ksa1182.pdf

KSA1150
KSA1150

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate TransistorsSOT-23 KSA1182 TRANSISTOR (PNP)FEATURES Complement to KSC2859 1. BASEMAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER3. COLLECTORSymbol Parameter Value UnitVCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector

 9.8. Size:476K  htsemi
ksa1182.pdf

KSA1150
KSA1150

KSA1182TRANSISTOR (PNP) SOT-23 FEATURES Complement to KSC2859 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. EMITTER 3. COLLECTOR Symbol Parameter Value UnitsVCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Collector Power Dissipation 150 mW Tj Junction Temp

 9.9. Size:205K  lge
ksa1175.pdf

KSA1150
KSA1150

KSA1175TO-92S Transistor (PNP)TO-92S 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 Features Collector-Base Voltage : VCBO= -60V Complement to KSC2785 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 VVEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -0.15 A Dim

 9.10. Size:212K  lge
ksa1182.pdf

KSA1150
KSA1150

KSA1182 SOT-23 Transistor(PNP)1. BASE SOT-232. EMITTER 3. COLLECTOR Features Complement to KSC2859 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V Dimensions in inches and (millimeters)VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Coll

Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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