KSA1156. Аналоги и основные параметры
Наименование производителя: KSA1156
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 10 W
Макcимально допустимое напряжение коллектор-база (Ucb): 400 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 375 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Статический коэффициент передачи тока (hFE): 30
Корпус транзистора: TO126
Аналоги (замена) для KSA1156
- подборⓘ биполярного транзистора по параметрам
KSA1156 даташит
..1. Size:65K fairchild semi
ksa1156.pdf 

KSA1156 High Voltage Switching Low Power Switching Regulator DC-DC Converter High Breakdown Voltage Low Collector Saturation Voltage High Speed Switching TO-126 1 1. Emitter 2.Collector 3.Base PNP Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage - 400 V VCEO Collector-Emitter Volta
8.1. Size:40K fairchild semi
ksa1150.pdf 

KSA1150 Low Frequency Power Amplifier Collector Dissipation PC = 300mW Complement to KSC2710 TO-92S 1 1.Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -5 V IC Collector Curr
9.1. Size:66K fairchild semi
ksa1142.pdf 

KSA1142 Audio Frequency Power Amplifier High Freqency Power Amplifier Complement to KSC2682 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage - 180 V VCEO Collector-Emitter Voltage - 180 V VEBO Emitter-Base Voltage - 5 V IC Collector Curren
9.2. Size:41K fairchild semi
ksa1175.pdf 

KSA1175 Low Frequency Amplifier Collector-Base Voltage VCBO= -60V Complement to KSC2785 TO-92S 1 1.Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -
9.3. Size:58K fairchild semi
ksa1182.pdf 

KSA1182 Low Frequency Power Amplifier Complement to KSC2859 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -500 mA PC Collector Power D
9.4. Size:46K fairchild semi
ksa1174.pdf 

KSA1174 Audio Frequency Low Noise Amplifier Complement to KSC2784 TO-92S 1 1.Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current -50 mA IB Base Current -10
9.5. Size:218K onsemi
ksa1142.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
9.6. Size:606K jiangsu
ad-ksa1182.pdf 

www.jscj-elec.com AD-KSA1182 series JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-KSA1182 series Plastic-Encapsulated Transistor AD-KSA1182 series Transistor (PNP) FEATURES Complementary to AD-KSC2859 AEC-Q101 qualified Version 1.0 1 / 5 2021-07-01 www.jscj-elec.com AD-KSA1182 series MAXIMUM RATINGS (T = 25 C unless otherwise specified) j Parameter Symbol
9.7. Size:511K jiangsu
ksa1182.pdf 

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 KSA1182 TRANSISTOR (PNP) FEATURES Complement to KSC2859 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector
9.8. Size:476K htsemi
ksa1182.pdf 

KSA1182 TRANSISTOR (PNP) SOT-23 FEATURES Complement to KSC2859 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. EMITTER 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Collector Power Dissipation 150 mW Tj Junction Temp
9.9. Size:205K lge
ksa1175.pdf 

KSA1175 TO-92S Transistor (PNP) TO-92S 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 Features Collector-Base Voltage VCBO= -60V Complement to KSC2785 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -0.15 A Dim
9.10. Size:212K lge
ksa1182.pdf 

KSA1182 SOT-23 Transistor(PNP) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features Complement to KSC2859 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Coll
Другие транзисторы: KSA1142, KSA1142O, KSA1142Y, KSA1150, KSA1150G, KSA1150O, KSA1150R, KSA1150Y, NJW0281G, KSA1156N, KSA1156O, KSA1156R, KSA1156Y, KSA1174, KSA1174E, KSA1174F, KSA1174P