Биполярный транзистор KSA1175 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: KSA1175
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.15 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 50 MHz
Ёмкость коллекторного перехода (Cc): 2.8 pf
Статический коэффициент передачи тока (hfe): 40
Корпус транзистора: TO92
KSA1175 Datasheet (PDF)
ksa1175.pdf
KSA1175Low Frequency Amplifier Collector-Base Voltage : VCBO= -60V Complement to KSC2785TO-92S11.Emitter 2. Collector 3. BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage -60 VVCEO Collector-Emitter Voltage -50 VVEBO Emitter-Base Voltage -5 VIC Collector Current -
ksa1175.pdf
KSA1175TO-92S Transistor (PNP)TO-92S 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 Features Collector-Base Voltage : VCBO= -60V Complement to KSC2785 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 VVEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -0.15 A Dim
ksa1174.pdf
KSA1174Audio Frequency Low Noise Amplifier Complement to KSC2784TO-92S11.Emitter 2. Collector 3. BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage -120 VVCEO Collector-Emitter Voltage -120 VVEBO Emitter-Base Voltage -5 VIC Collector Current -50 mAIB Base Current -10
ksa1142.pdf
KSA1142Audio Frequency Power Amplifier High Freqency Power Amplifier Complement to KSC2682TO-12611. Emitter 2.Collector 3.BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage - 180 VVCEO Collector-Emitter Voltage - 180 VVEBO Emitter-Base Voltage - 5 VIC Collector Curren
ksa1150.pdf
KSA1150Low Frequency Power Amplifier Collector Dissipation : PC = 300mW Complement to KSC2710TO-92S11.Emitter 2. Collector 3. BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage -40 VVCEO Collector-Emitter Voltage -20 VVEBO Emitter-Base Voltage -5 VIC Collector Curr
ksa1156.pdf
KSA1156High Voltage SwitchingLow Power Switching Regulator DC-DC Converter High Breakdown Voltage Low Collector Saturation Voltage High Speed SwitchingTO-12611. Emitter 2.Collector 3.BasePNP Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage - 400 VVCEO Collector-Emitter Volta
ksa1182.pdf
KSA1182Low Frequency Power Amplifier Complement to KSC285932SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage -35 VVCEO Collector-Emitter Voltage -30 VVEBO Emitter-Base Voltage -5 VIC Collector Current -500 mAPC Collector Power D
ksa1142.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
ad-ksa1182.pdf
www.jscj-elec.com AD-KSA1182 series JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-KSA1182 series Plastic-Encapsulated Transistor AD-KSA1182 series Transistor (PNP) FEATURES Complementary to AD-KSC2859 AEC-Q101 qualified Version 1.0 1 / 5 2021-07-01 www.jscj-elec.com AD-KSA1182 series MAXIMUM RATINGS (T = 25C unless otherwise specified) j Parameter Symbol
ksa1182.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate TransistorsSOT-23 KSA1182 TRANSISTOR (PNP)FEATURES Complement to KSC2859 1. BASEMAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER3. COLLECTORSymbol Parameter Value UnitVCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector
ksa1182.pdf
KSA1182TRANSISTOR (PNP) SOT-23 FEATURES Complement to KSC2859 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. EMITTER 3. COLLECTOR Symbol Parameter Value UnitsVCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Collector Power Dissipation 150 mW Tj Junction Temp
ksa1182.pdf
KSA1182 SOT-23 Transistor(PNP)1. BASE SOT-232. EMITTER 3. COLLECTOR Features Complement to KSC2859 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V Dimensions in inches and (millimeters)VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Coll
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050