Биполярный транзистор KSB1015 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: KSB1015
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 9 MHz
Ёмкость коллекторного перехода (Cc): 130 pf
Статический коэффициент передачи тока (hfe): 60
Корпус транзистора: TO220
KSB1015 Datasheet (PDF)
ksb1015.pdf
KSB1015Low Frequency Power Amplifier Low Collector Emitter Saturation Voltage Complement to KSD1406TO-220F11.Base 2.Collector 3.EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage - 60 VVCEO Collector-Emitter Voltage - 60 VVEBO Emitter-Base Voltage - 7 VIC Collecto
ksb1015.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
ksb1017.pdf
KSB1017Power Amplifier Applications Complement to KSD1408TO-220F11.Base 2.Collector 3.EmitterPNP Silicon Epitaxial TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage - 80 VVCEO Collector-Emitter Voltage - 80 VVEBO Emitter-Base Voltage - 5 VIC Collector Current - 4 AIB Base Current - 0.4 APC Co
ksb1017.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
ksb1097.pdf
KSB1097Low Frequency Power Amplifier Low Speed Switchng Industrial Use Complement to KSD1588TO-220F11.Base 2.Collector 3.EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage - 80 VVCEO Collector-Emitter Voltage - 60 VVEBO Emitter-Base Voltage - 7 VIC Collector Curre
ksb1098.pdf
KSB1098Low Frequency Power Amplifier Low Speed Switchng Industrial Use Complement to KSD1589TO-220F11.Base 2.Collector 3.EmitterPNP Silicon Darlington TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 100 V VCEO Collector-Emitter Voltage - 100 V VEBO Emitter-Base Voltage - 7 V IC Collect
ksb1023.pdf
KSB1023Power Amplifier Applications High DC Current Gain Low Collector-Emitter Saturation Voltage Complement to KSD1413TO-220F11.Base 2.Collector 3.EmitterPNP Silicon Darlington TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage - 60 VVCEO Collector-Emitter Voltage - 40 VVEBO Emitter-Base
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050