KSB1151Feature Low Collector-Emitter Saturation Voltage Large Collector Current High Power Dissipation : PC=1.3W (Ta=25C) Complement to KSD 1691TO-12611. Emitter 2.Collector 3.BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 60 V VCEO Collector-Emitter V

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate TransistorsKSB1151 TRANSISTOR (PNP)TO 126 FEATURES 1. EMITTER Low Collector-Emitter Saturation Voltage Large Collector Current 2. COLLECTOR High Power Dissipation Complement to KSD1691 3. BASE Equivalent Circuit B1151=Device code Solid dot = Green molding compound device,

KSB1116SAudio Frequency Power Amplifier & Medium Speed SwitchingTO-9211. Emitter 2. Base 3. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage -60 VVCEO Collector-Emitter Voltage -50 VVEBO Emitter-Base Voltage -6 VIC Collector Current (DC) -1 AICP * Collector Curren

KSB1116/1116AAudio Frequency Power Amplifier & Medium Speed Switching Complement to KSD1616/1616ATO-9211. Emitter 2. Collector 3. BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage : KSB1116 -60 V : KSB1116A -80 VVCEO Collector-Emitter Voltage : KSB1116 -50 V : KSB111

July 2005KSB1121PNP Epitaxial Planar Silicon TransistorHigh Current Driver Applications Low Collector-Emitter Saturation Voltage Large Current Capacity Fast Switching Speed Complement to KSD1621Marking1 1 2 1P Y W WSOT-891Weekly code1. Base 2. Collector 3. EmitterYear codehFE grageAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Pa

KSB1149Low Collector Saturation VoltageBuilt-in Damper Diode at E-C High DC Current Gain High Power Dissipation : PC=1.3W (Ta=25C)TO-12611. Emitter 2.Collector 3.BasePNP Silicon Darlington TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 100 V VCEO Collector-Emitter Voltage - 100 V VEB