Справочник транзисторов. KSC2710R

 

Биполярный транзистор KSC2710R - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: KSC2710R
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.3 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 40
   Корпус транзистора: TO92

 Аналоги (замена) для KSC2710R

 

 

KSC2710R Datasheet (PDF)

 7.1. Size:41K  fairchild semi
ksc2710.pdf

KSC2710R
KSC2710R

KSC2710Low Frequency Power Amplifier Complement to KSA1150 Collector Dissipation : PC=300mWTO-92S11.Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 20 VVEBO Emitter-Base Voltage 5 VIC Collector Current 5

 8.1. Size:59K  fairchild semi
ksc2715.pdf

KSC2710R
KSC2710R

KSC2715FM RADIO AMP, MIX, CONV, OSC, IF AMP321 SOT-231. Base 2. Emitter 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 35 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 4 VIC Collector Current 50 mAPC Collector Power Dissipation 150 mWTJ Juncti

 9.1. Size:77K  fairchild semi
ksc2755.pdf

KSC2710R
KSC2710R

KSC2755RF AMP, FOR VHF &TV TUNER Low NF, High GPE3 Forward AGC Capability to 30 dB NF=2.0dB (TYP.), GPE=23dB (TYP.) at f=200MHz21 SOT-231. Base 2. Emitter 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 VVCEO Collector-Emitter Voltage 30 VVEBO Emit

 9.2. Size:40K  fairchild semi
ksc2785.pdf

KSC2710R
KSC2710R

KSC2785Audio Frequency Amplifier & High Frequency OSC. Complement to KSA1175 Collector-Base Voltage : VCBO=60VTO-92S11.Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50 VVEBO Emitter-Base Voltage 5 VIC

 9.3. Size:41K  fairchild semi
ksc2787.pdf

KSC2710R
KSC2710R

KSC2787FM/AM RF AMP, MIX, CONV, OSC, IF Collector-Emitter Voltage : VCEO=30V High Current Gain Bandwidth Product : fT=300MHz (TYP) Low Output Capacitance : Cob=2.0pF (TYP)TO-92S11.Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 50 VVCEO Co

 9.4. Size:46K  fairchild semi
ksc2784.pdf

KSC2710R
KSC2710R

KSC2784Audio Frequency Low Noise Amplifier Complement to KSA1174TO-92S11.Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 120 VVCEO Collector-Emitter Voltage 120 VVEBO Emitter-Base Voltage 5 VIC Collector Current 50 mAIB Base Current 10 mAPC

 9.5. Size:74K  fairchild semi
ksc2786.pdf

KSC2710R
KSC2710R

KSC2786TV PIF Amplifier, FM Tuner RF Amplifier, Mixer, Oscillator High Current Gain Bandwidth Product : fT=600MHz (TYP) High Power Gain : GPE=22dB at f=100MHzTO-92S11.Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 VVCEO Collector-Emitter

 9.6. Size:77K  fairchild semi
ksc2757.pdf

KSC2710R
KSC2710R

KSC2757Mixer Oscillator for VHF Tuner High Current Gain Bandwidth Product : fT=1100MHz (TYP)321 SOT-231. Base 2. Emitter 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 VVCEO Collector-Emitter Voltage 15 VVEBO Emitter-Base Voltage 5 VIC Collector Current 5

 9.7. Size:56K  fairchild semi
ksc2752.pdf

KSC2710R
KSC2710R

KSC2752High SpeedHigh Voltage Swiching Industrial UseTO-1261NPN Epitaxial Silicon Transistor1. Emitter 2.Collector 3.BaseAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 0.5 A ICP *Collector Current (Pulse) 1

 9.8. Size:53K  samsung
ksc2785.pdf

KSC2710R
KSC2710R

KSC2785 NPN EPITAXIAL SILICON TRANSISTORAUDIO FREQUENCY AMPLIFIERTO-92SHIGH FREQUENCY OSC. Complement to KSA1175 Collector-Base Voltage VCBO=60VABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 60 VCollector-Emitter Voltage VCEO 50 VEmitter-Base Voltage VEBO 5 VCollector Current IC 150 mACollector Dissipation PC 250 mW

 9.9. Size:152K  samsung
ksc2786.pdf

KSC2710R
KSC2710R

KSC2786 NPN EPITAXIAL SILICON TRANSISTORTV PIF AMPLIFIER, FM TUNER RF AMPLIFIER,TO-92SMIXER, OSCILLATOR High Current-Gain-Bandwidth Product fT=600MHz (Typ) High Power Gain GPE=22dB at f=100MHzABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 30 VCollector-Emitter Voltage VCEO 20 VEmitter-Base Voltage VEBO 4 VCollector Curr

 9.10. Size:208K  onsemi
ksc2752.pdf

KSC2710R
KSC2710R

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 

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