KSC2710R datasheet, аналоги, основные параметры
Наименование производителя: KSC2710R 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.3 W
Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Статический коэффициент передачи тока (hFE): 40
Корпус транзистора: TO92
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Аналоги (замена) для KSC2710R
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KSC2710R даташит
7.1. Size:41K fairchild semi
ksc2710.pdf 
KSC2710 Low Frequency Power Amplifier Complement to KSA1150 Collector Dissipation PC=300mW TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 5 V IC Collector Current 5
8.1. Size:59K fairchild semi
ksc2715.pdf 
KSC2715 FM RADIO AMP, MIX, CONV, OSC, IF AMP 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4 V IC Collector Current 50 mA PC Collector Power Dissipation 150 mW TJ Juncti
9.1. Size:77K fairchild semi
ksc2755.pdf 
KSC2755 RF AMP, FOR VHF &TV TUNER Low NF, High GPE 3 Forward AGC Capability to 30 dB NF=2.0dB (TYP.), GPE=23dB (TYP.) at f=200MHz 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emit
9.2. Size:40K fairchild semi
ksc2785.pdf 
KSC2785 Audio Frequency Amplifier & High Frequency OSC. Complement to KSA1175 Collector-Base Voltage VCBO=60V TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC
9.3. Size:41K fairchild semi
ksc2787.pdf 
KSC2787 FM/AM RF AMP, MIX, CONV, OSC, IF Collector-Emitter Voltage VCEO=30V High Current Gain Bandwidth Product fT=300MHz (TYP) Low Output Capacitance Cob=2.0pF (TYP) TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Co
9.4. Size:46K fairchild semi
ksc2784.pdf 
KSC2784 Audio Frequency Low Noise Amplifier Complement to KSA1174 TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current 50 mA IB Base Current 10 mA PC
9.5. Size:74K fairchild semi
ksc2786.pdf 
KSC2786 TV PIF Amplifier, FM Tuner RF Amplifier, Mixer, Oscillator High Current Gain Bandwidth Product fT=600MHz (TYP) High Power Gain GPE=22dB at f=100MHz TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter
9.6. Size:77K fairchild semi
ksc2757.pdf 
KSC2757 Mixer Oscillator for VHF Tuner High Current Gain Bandwidth Product fT=1100MHz (TYP) 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 5 V IC Collector Current 5
9.7. Size:56K fairchild semi
ksc2752.pdf 
KSC2752 High Speed High Voltage Swiching Industrial Use TO-126 1 NPN Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 0.5 A ICP *Collector Current (Pulse) 1
9.8. Size:53K samsung
ksc2785.pdf 
KSC2785 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER TO-92S HIGH FREQUENCY OSC. Complement to KSA1175 Collector-Base Voltage VCBO=60V ABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current IC 150 mA Collector Dissipation PC 250 mW
9.9. Size:152K samsung
ksc2786.pdf 
KSC2786 NPN EPITAXIAL SILICON TRANSISTOR TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, TO-92S MIXER, OSCILLATOR High Current-Gain-Bandwidth Product fT=600MHz (Typ) High Power Gain GPE=22dB at f=100MHz ABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 4 V Collector Curr
9.10. Size:208K onsemi
ksc2752.pdf 
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Другие транзисторы: KSC2690AR, KSC2690AY, KSC2690O, KSC2690R, KSC2690Y, KSC2710, KSC2710G, KSC2710O, 2N2907, KSC2710Y, KSC2715, KSC2715O, KSC2715R, KSC2715Y, KSC2734, KSC2749, KSC2751
