Биполярный транзистор KSC5027O - описание производителя. Основные параметры. Даташиты.
Наименование производителя: KSC5027O
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 50 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1100 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 800 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 15 MHz
Ёмкость коллекторного перехода (Cc): 35 pf
Статический коэффициент передачи тока (hfe): 20
Корпус транзистора: TO220
KSC5027O Datasheet (PDF)
ksc5027.pdf
KSC5027High Voltage and High Reliability High Speed Switching Wide SOATO-22011.Base 2.Collector 3.EmitterNPN Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 3 A ICP Collector Curre
ksc5027f.pdf
KSC5027F NPN SILICON TRANSISTORHIGH VOLTAGE AND HIGH RELIABILITYHIGH SPEED SWITCHINGTO-220FWIDE SOAABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1100 V Collector-Emitter Voltage V CEO 800 V Emitter-Base Voltage VEBO 7 V Collector Current (DC) IC 3 A Collector Current (Pulse) IC 10 A Base Current IB 1.5 A Collector Dissipation (TC
ksc5027.pdf
KSC5027 NPN SILICON TRANSISTORHIGH VOLTAGE AND HIGH RELIABILITYTO-220HIGH SPEED SWITCHINGWIDE SOAABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1100 V Collector-Emitter Voltage VCEO 800 V Emitter-Base Voltage VEBO 7 V Collector Current (DC) IC 3 A Collector Current (Pulse) IC 10 A Base Current IB 1.5 A1.Base 2.Collector 3.Emitter
ksc5027.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
ksc5027f.pdf
isc Silicon NPN Power Transistor KSC5027FDESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applicationsHigh speed DC-DC converter applications.ABSOLUT
ksc5027.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors KSC5027 DESCRIPTION With TO-220C package High voltage and high reliability High speed switching Wide area of safe operation PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
