Биполярный транзистор KSH117 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: KSH117
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 20 W
Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 2 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 25 MHz
Ёмкость коллекторного перехода (Cc): 100 pf
Статический коэффициент передачи тока (hfe): 10000
Корпус транзистора: TO252
KSH117 Datasheet (PDF)
ksh117.pdf
KSH117D-PAK for Surface Mount Applications High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, - I Suffix)D-PAK I-PAK11 Electrically Similar to Popular TIP1171.Base 2.Collector 3.EmitterPNP Silicon Darlington TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted
ksh117.pdf
KSH117 PNP SILICON DARLINGTON TRANSISTORD-PACK FOR SURFACE MOUNTD-PAKAPPLICATIONS High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I. PACK, - I Suffix)1 Electrically Similar to Popular TIP117ABSOLUTE MAXIMUM RATINGS1. Base 2. Collector 3. EmitterCharacteristic Symbol Rating Un
ksh117.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor KSH117DESCRIPTIONHigh DC current gainBuilt-in a damper diode at E-CElectrically similar to popular TIP117100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low speedswitching applications.ABSOLUTE MAX
ksh112.pdf
KSH112D-PAK for Surface Mount Applications High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, - I Suffix)D-PAK I-PAK11 Electrically Similar to Popular TIP1121.Base 2.Collector 3.EmitterNPN Silicon Darlington TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted
ksh112.pdf
KSH112 NPN SILICON DARLINGTON TRANSISTORD-PACK FOR SURFACE MOUNTD-PAKAPPLICATIONS High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I. PACK, - I Suffix)1 Electrically Similar to Popular TIP112ABSOLUTE MAXIMUM RATINGS1. Base 2. Collector 3. EmitterCharacteristic Symbol Rating Un
ksh112.pdf
isc Silicon NPN Power Transistor KSH112DESCRIPTIONHigh DC current gainBuilt-in a damper diode at E-CElectrically similar to popular TIP112100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low speedswitching applications.ABSOLUTE MAXIMUM RATINGS(T =25)
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050 | HSA1037AKS | HSA1037AKR | HSA1037AKQ