Биполярный транзистор KSR2102 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: KSR2102
Маркировка: R52
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 10 kOhm
Встроенный резистор цепи смещения R2 = 10 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 200 MHz
Ёмкость коллекторного перехода (Cc): 5.5 pf
Статический коэффициент передачи тока (hfe): 30
Корпус транзистора: SOT23
KSR2102 Datasheet (PDF)
ksr2102.pdf
KSR2102Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=10K, R2=10K) Complement to KSR11022SOT-2311. Base 2. Emitter 3. CollectorEquivalent CircuitCMarkingR1R52 BR2PNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted Sy
ksr2101.pdf
KSR2101Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1 =4.7K, R2=4.7K) Complement to KSR11012SOT-2311. Base 2. Emitter 3. CollectorEquivalent CircuitCMarkingR1BR51R2PNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted
ksr2107.pdf
KSR2107Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=22K, R2=47K) Complement to KSR11072SOT-2311. Base 2. Emitter 3. CollectorEquivalent CircuitCMarkingR1BR57R2PNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted
ksr2104.pdf
KSR2104Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=47K, R2=47K) Complement to KSR11042SOT-2311. Base 2. Emitter 3. CollectorEquivalent CircuitCMarkingR1BR54R2PNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted
ksr2103.pdf
KSR2103Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=22K, R2=22K) Complement to KSR11032SOT-2311. Base 2. Emitter 3. CollectorEquivalent CircuitCMarkingR1BR53R2PNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted
ksr2105.pdf
KSR2105Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=4.7K, R2=10K) Complement to KSR11052SOT-2311. Base 2. Emitter 3. CollectorEquivalent CircuitCMarkingR1BR55R2PNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted
ksr2109.pdf
KSR2109Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R=4.7K) Complement to KSR11092SOT-2311. Base 2. Emitter 3. CollectorEquivalent CircuitCMarkingRR59 BPNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter
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