Биполярный транзистор KSR2106
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: KSR2106
Маркировка: R56
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 10 kOhm
Встроенный резистор цепи смещения R2 = 47 kOhm
Соотношение сопротивлений R1/R2 = 0.21
Максимальная рассеиваемая мощность (Pc): 0.2
W
Макcимально допустимое напряжение коллектор-база (Ucb): 50
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 10
V
Макcимальный постоянный ток коллектора (Ic): 0.1
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 200
MHz
Ёмкость коллекторного перехода (Cc): 5.5
pf
Статический коэффициент передачи тока (hfe): 68
Корпус транзистора:
SOT23
Аналоги (замена) для KSR2106
KSR2106
Datasheet (PDF)
8.1. Size:52K fairchild semi
ksr2101.pdf KSR2101Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1 =4.7K, R2=4.7K) Complement to KSR11012SOT-2311. Base 2. Emitter 3. CollectorEquivalent CircuitCMarkingR1BR51R2PNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted
8.2. Size:53K fairchild semi
ksr2107.pdf KSR2107Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=22K, R2=47K) Complement to KSR11072SOT-2311. Base 2. Emitter 3. CollectorEquivalent CircuitCMarkingR1BR57R2PNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted
8.3. Size:52K fairchild semi
ksr2104.pdf KSR2104Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=47K, R2=47K) Complement to KSR11042SOT-2311. Base 2. Emitter 3. CollectorEquivalent CircuitCMarkingR1BR54R2PNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted
8.4. Size:53K fairchild semi
ksr2103.pdf KSR2103Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=22K, R2=22K) Complement to KSR11032SOT-2311. Base 2. Emitter 3. CollectorEquivalent CircuitCMarkingR1BR53R2PNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted
8.5. Size:53K fairchild semi
ksr2105.pdf KSR2105Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=4.7K, R2=10K) Complement to KSR11052SOT-2311. Base 2. Emitter 3. CollectorEquivalent CircuitCMarkingR1BR55R2PNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted
8.6. Size:41K fairchild semi
ksr2102.pdf KSR2102Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=10K, R2=10K) Complement to KSR11022SOT-2311. Base 2. Emitter 3. CollectorEquivalent CircuitCMarkingR1R52 BR2PNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted Sy
8.7. Size:49K fairchild semi
ksr2109.pdf KSR2109Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R=4.7K) Complement to KSR11092SOT-2311. Base 2. Emitter 3. CollectorEquivalent CircuitCMarkingRR59 BPNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter
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