Биполярный транзистор KTA1657 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: KTA1657
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 20 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 150 V
Макcимальный постоянный ток коллектора (Ic): 1.5 A
Предельная температура PN-перехода (Tj): 175 °C
Статический коэффициент передачи тока (hfe): 40
Корпус транзистора: TO220F
KTA1657 Datasheet (PDF)
kta1659 a.pdf
SEMICONDUCTOR KTA1659/ATECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH VOLTAGE APPLICATION.ACFEATURESDIM MILLIMETERSSHigh Transition Frequency : fT=100MHz(Typ.)._A 10.0 + 0.3_+B 15.0 0.3EComplementary to KTC4370/A.C _2.70 0.3+D 0.76+0.09/-0.05_E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +H 0.5+0.1/-0.05_+J 13.6 0.5L LMAXIMUM RATING (T
kta1659 kta1659a.pdf
SEMICONDUCTOR KTA1659/ATECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH VOLTAGE APPLICATION.ACFEATURESDIM MILLIMETERSSHigh Transition Frequency : fT=100MHz(Typ.)._A 10.0 + 0.3_+B 15.0 0.3EComplementary to KTC4370/A.C _2.70 0.3+D 0.76+0.09/-0.05_E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +H 0.5+0.1/-0.05_+J 13.6 0.5L LMAXIMUM RATING (T
kta1658.pdf
SEMICONDUCTOR KTA1658TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION. ACFEATURES DIM MILLIMETERSSGood Linearity of hFE._A 10.0 + 0.3_+B 15.0 0.3EComplementary to KTC4369.C _2.70 0.3+D 0.76+0.09/-0.05_E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +H 0.5+0.1/-0.05_+J 13.6 0.5L LMAXIMUM RATING (Ta=25 )RK _3.7 0
kta1659.pdf
DIP Type TransistorsPNP TransistorsKTA1659Unit: mmTO-220F0.200.200.202.540.200.70 Features High Transition Frequency Comlementary to KTC43700.202.761.47max0.200.500.200.801. Base2.54typ2. Collector2.54typ3. Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -160
kta1659a.pdf
DIP Type TransistorsPNP TransistorsKTA1659AUnit: mmTO-220F0.200.200.202.540.200.70 Features High Transition Frequency Comlementary to KTC4370A0.202.761.47max0.200.500.200.801. Base2.54typ2. Collector2.54typ3. Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -1
kta1659.pdf
isc Silicon PNP Power Transistor KTA1659DESCRIPTIONHigh Collector-Emitter Breakdown VoltageV = -160V(Min)CEOComplement to Type KTC4370Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -160 VCBO
kta1659a.pdf
isc Silicon PNP Power Transistor KTA1659ADESCRIPTIONHigh Collector-Emitter Breakdown VoltageV = -180V(Min)CEOComplement to Type KTC4370AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -180 VC
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050