KTA1661 - описание и поиск аналогов

 ..1. Size:42K  kec
 kta1661.pdf 

SEMICONDUCTOR KTA1661 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURES A C High Voltage VCEO=-120V. H High Transition Frequency fT=120MHz(Typ.). G 1W(Monunted on Ceramic Substrate). Small Flat Package. DIM MILLIMETERS Complementary to KTC4373. A 4.70 MAX D _ + D B 2.50 0.20 K C 1.70 MAX D 0.45+0.15/-0.10 F F E 4.25 MAX _ + F 1.50 0.10

 ..2. Size:885K  kexin
 kta1661.pdf 

SMD Type Transistors PNP Transistors KTA1661 1.70 0.1 Features High Voltage High Transition Frequency Small Flat Package 0.42 0.1 0.46 0.1 Complementary to KTC4373 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -120 V Emitter - Base

 ..3. Size:631K  cn hottech
 kta1661.pdf 

KTA1661 BIPOLAR TRANSISTOR (PNP) FEATURES Complementary to KTC4373 High Transition Frequency High Current Application High Voltage Surface Mount device SOT-89 MECHANICAL DATA Case SOT-89 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.055 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted

 8.1. Size:256K  mcc
 kta1664-o.pdf 

KTA1664-O MCC TM Micro Commercial Components KTA1664-Y 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Low Collector Saturation Voltage PNP Silicon Execllent current-to-gain characteristics Epitaxial Transistors Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See orderi

 8.2. Size:678K  jiangsu
 kta1663.pdf 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTA1663 TRANSISTOR (PNP) 1. BASE FEATURES High current applications 2. COLLECTOR Complementary to KTC4375 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage

 8.3. Size:561K  jiangsu
 kta1666.pdf 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTA1666 TRANSISTOR (PNP) 1. BASE FEATURES 2. COLLECTOR Complementary to KTC4379 Small Flat Package 3. EMITTER Low Saturation Voltage Power Amplifier and Switching Application MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Co

 8.4. Size:138K  jiangsu
 kta1664.pdf 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTA1664 TRANSISTOR (PNP) 1. BASE FEATURES 2. COLLECTOR Complementary to KTC4376 Small Flat Package 3. EMITTER High Current Application MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -35 V VCEO Collector-

 8.5. Size:542K  jiangsu
 kta1668.pdf 

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTA1668 TRANSISTOR(PNP) 1. BASE FEATURES High voltage VCEO=-60V 2. COLLECTOR High transistors frequency 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Em

 8.6. Size:307K  kec
 kta1663.pdf 

SEMICONDUCTOR KTA1663 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURES A C 1W (Mounted on Ceramic Substrate). H Small Flat Package. G Complementary to KTC4375. DIM MILLIMETERS A 4.70 MAX D _ + D B 2.50 0.20 K C 1.70 MAX D 0.45+0.15/-0.10 MAXIMUM RATING (Ta=25 ) F F E 4.25 MAX _ + F 1.50 0.10 CHARACTERISTIC SYMBOL RATING UNIT G

 8.7. Size:306K  kec
 kta1662.pdf 

SEMICONDUCTOR KTA1662 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES A C 1W (Mounted on Ceramic Substrate). H Small Flat Package. G Complementary to KTC4374. DIM MILLIMETERS A 4.70 MAX D _ + D B 2.50 0.20 K C 1.70 MAX D 0.45+0.15/-0.10 MAXIMUM RATING (Ta=25 ) F F E 4.25 MAX _ + F 1.50 0.10 CHARACTERISTIC SYMBOL RATING UNIT

 8.8. Size:49K  kec
 kta1660.pdf 

SEMICONDUCTOR KTA1660 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE SWITCHING APPLICATION. FEATURES A C High Voltage VCEO=-150V. H High Transition Frequency fT=120MHz(Typ.). G 1W (Monunted on Ceramic Substrate). Small Flat Package. DIM MILLIMETERS Complementary to KTC4372. A 4.70 MAX D _ + D B 2.50 0.20 K C 1.70 MAX D 0.45+0.15/-0.10 F F E 4.25 MAX _ +

 8.9. Size:86K  kec
 kta1666.pdf 

SEMICONDUCTOR KTA1666 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. A C FEATURES H Low Saturation Voltage G VCE(sat)=-0.5V(Max.) (IC=-1A) High Speed Switching Time tstg=1.0 S(Typ.) DIM MILLIMETERS PC=1 2W (Mounted on Ceramic Substrate) A 4.70 MAX D _ + D B 2.50 0.20 Small Flat Package. K C 1.70 MAX D 0.

 8.10. Size:74K  kec
 kta1664.pdf 

SEMICONDUCTOR KTA1664 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURES A C 1W (Mounted on Ceramic Substrate). H Small Flat Package. G Complementary to KTC4376. DIM MILLIMETERS A 4.70 MAX D _ + D B 2.50 0.20 K C 1.70 MAX D 0.45+0.15/-0.10 MAXIMUM RATING (Ta=25 ) F F E 4.25 MAX _ + F 1.50 0.10 CHARACTERISTIC SYMBOL RATING UNIT G 0.40

 8.11. Size:280K  kec
 kta1668.pdf 

SEMICONDUCTOR KTA1668 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR VOLTAGE REGULATOR, RELAY, LAMP DRIVER, INDUSTRIAL USE A C FEATURES H High Voltage VCEO=-60V(Min.). G High Current IC(Max.)=-1A. High Transition Frequency fT=150MHz (Typ.). DIM MILLIMETERS Wide Area of Safe Operation. A 4.70 MAX D _ + D B 2.50 0.20 Complementary to KTC4378. K C 1.70 MAX D 0.45+0.15/-

 8.12. Size:470K  htsemi
 kta1663.pdf 

KTA1663 TRANSISTOR (PNP) SOT-89 FEATURES High current applications 1. BASE Complementary to KTC4375 2. COLLECTOR 1 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.5 A PC Coll

 8.13. Size:364K  htsemi
 kta1666.pdf 

KTA1666 TRANSISTOR (PNP) SOT-89-3L FEATURES 1. BASE Complementary to KTC4379 Small Flat Package 2. COLLECTOR Low Saturation Voltage 3. EMITTER Power Amplifier and Switching Application MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V

 8.14. Size:364K  htsemi
 kta1664.pdf 

KTA1664 TRANSISTOR (PNP) SOT-89-3L FEATURES 1. BASE Complementary to KTC4376 Small Flat Package 2. COLLECTOR High Current Application 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -800 mA PC Collect

 8.15. Size:586K  htsemi
 kta1668.pdf 

KTA1668 TRANSISTOR (PNP) SOT-89 FEATURES 1. BASE High voltage VCEO=-60V High transistors frequency 2. COLLECTOR 1 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -1 A PC Collector power di

 8.16. Size:242K  lge
 kta1663 sot-89.pdf 

KTA1663 SOT-89 Transistor(PNP) 1. BASE 2. COLLECTOR SOT-89 1 4.6 2 B 4.4 1.6 3. EMITTER 1.8 1.4 3 1.4 Features 2.6 4.25 2.4 3.75 High current applications 0.8 MIN Complementary to KTC4375 0.53 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 1.5 3.0 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Valu

 8.17. Size:222K  lge
 kta1668 sot-89.pdf 

KTA1668 SOT-89 Transistor(PNP) 1. BASE 2. COLLECTOR 1 SOT-89 2 4.6 B 4.4 3. EMITTER 1.6 3 1.8 1.4 1.4 Features 2.6 4.25 2.4 3.75 High voltage VCEO=-60V 0.8 High transistors frequency MIN 0.53 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 1.5 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.0 Symbol Parameter Value Units Dimensions in inches and (mill

 8.18. Size:172K  wietron
 kta1663.pdf 

KTA1663 PNP Epitaxial Planar Transistors P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 1 3. EMITTER 2 3 SOT-89 ABSOLUTE MAXIMUM RATINGS (TA=25 C) Rating Symbol Limits Unit VCBO V Collector-Base Voltage -35 VCEO V Collector-Emitter Voltage -30 VEBO V Emitter-Base Voltage -5.0 Collector Current IC A -1.5 Collector Power Dissipation PD 0.5 W Tj Junction Temperature -55 to +150

 8.19. Size:357K  wietron
 kta1666.pdf 

KTA1666 PNP EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1. BASE 1 2. COLLECTOR 2 3 3. EMITTER SOT-89 ABSOLUTE MAXIMUM RATINGS(Ta Rating Symbol Value Unit VCBO -50 V Collector-Base Voltage VCEO -50 V Collector-Emitter Voltage V VEBO -5 Emitter-Base Voltage IC Collector Current-Continuous -2.0 A PC 0.5 W Collector Power Disspation Junction Temperature TJ 150 C -55 t

 8.20. Size:228K  wietron
 kta1664.pdf 

KTA166 PNP Epitaxial Planar Transistors P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 1 3. EMITTER 2 3 SOT-89 ABSOLUTE MAXIMUM RATINGS (TA=25 C) Rating Symbol Limits Unit VCBO V Collector-Base Voltage -35 VCEO V Collector-Emitter Voltage -30 VEBO V Emitter-Base Voltage -5.0 Collector Current IC A -0.8 Collector Power Dissipation PD 0.5 W Tj Junction Temperature -55 to +150

 8.21. Size:700K  blue-rocket-elect
 kta1666.pdf 

 8.22. Size:1083K  kexin
 kta1663.pdf 

SMD Type Transistors PNP Transistors KTA1663 1.70 0.1 Features 1W (Mounted on Ceramic Substrate) Small Flat Package Comlementary to KTC4375 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -30 V Emitter - Base Voltage VEBO -

 8.23. Size:1121K  kexin
 kta1660.pdf 

SMD Type Transistors PNP Transistors KTA1660 1.70 0.1 Features High Voltage High Transition Frequency Complementary to KTC4372 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -150 Collector - Emitter Voltage VCEO -150 V Emitter - Base Voltage VEBO -5 Collect

 8.24. Size:1170K  kexin
 kta1666.pdf 

SMD Type Transistors PNP Transistors KTA1666 1.70 0.1 Features Small Flat Package Low Saturation Voltage 0.42 0.1 0.46 0.1 Power Amplifier and Switching Application Comlementary to KTC4379 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO

 8.25. Size:1223K  kexin
 kta1664.pdf 

SMD Type Transistors PNP Transistors KTA1664 1.70 0.1 Features 1W (Mounted on Ceramic Substrate) Small Flat Package 0.42 0.1 0.46 0.1 Comlementary to KTC4376 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -35 Collector - Emitter Voltage VCEO -30 V Emitter - Base Voltage VEBO -

 8.26. Size:623K  kexin
 kta1668.pdf 

SMD Type Transistors PNP Transistors KTA1668 1.70 0.1 Features High Voltage VCEO=-60V(Min.). High Current IC(Max.)=-1A. High Transition Frequency 0.42 0.1 0.46 0.1 Complementary to KTC4378. 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter Voltage

 8.27. Size:553K  cn shikues
 kta1663o kta1663y.pdf 

KTA1663 PNP-Silicon General use Transistors 0.8W 1.5A 25V 4 Applications Can be used for switching and amplifying in various 2 1 3 SOT-89 electrical and electronic circuit. Maximum ratings Parameters Symbol Rating Unit V VCEO 25 Collector-emitter voltage (IB=0) VCBO 30 V Collector-base voltage IE=0 VEBO 6 V Emitter-base voltage IC=0 IC 1.5 A Col