KTA200 - описание и поиск аналогов

 ..1. Size:485K  kec
 kta200.pdf 

SEMICONDUCTOR KTA200 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEAUTRES Excellent hFE Linearity hFE(2)=25(Min.) at VCE=-6V, IC=-400mA. N DIM MILLIMETERS Complementary to KTC200. A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 MAXIMUM RATING (Ta=25 ) H 0.45 _ H J 14.00 + 0.50 C

 9.1. Size:230K  mcc
 kta2014-gr-o-y.pdf 

KTA2014-O MCC Micro Commercial Components TM KTA2014-Y 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 KTA2014-GR Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP RoHS Compliant. See ordering information) Low frequency power amplifier application Plastic-Encapsulate Power switching

 9.2. Size:445K  secos
 kta2014.pdf 

KTA2014 -0.15A , -50V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323 FEATURES Low frequency power amplifier application A Power switching application L 3 3 Top View C B CLASSIFICATION OF hFE 1 1 2 2 K E Product-Rank KTA2014-O KTA2014-Y KTA2014-GR Range 70 140 120 240

 9.3. Size:35K  kec
 kta2017.pdf 

SEMICONDUCTOR KTA2017 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES E High Voltage VCEO=-120V. M B M DIM MILLIMETERS Excellent hFE Linearity _ A + 2.00 0.20 D 2 hFE(0.1mA)/hFE(2mA)=0.95(Typ.). _ + B 1.25 0.15 _ + C 0.90 0.10 High hFE hFE=200 700. 3 1 D 0.3+0.10/-0.05 _ E + 2.10 0.20 Low Noise NF=1dB(Typ.),

 9.4. Size:72K  kec
 kta2012e.pdf 

SEMICONDUCTOR KTA2012E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. FEATURES E A Collector Current is Large. B DIM MILLIMETERS Collector Saturation Voltage is low. _ + A 1.60 0.10 D VCE(sat) -250mV at IC=-200mA/IB=-10mA. _ + 2 B 0.85 0.10 _ + C 0.70 0.10 Complementary to KTC4072E. 3 1 D 0.27+0.10/-0.05 _ + E 1.60 0.10 _ + 1.00 0.10 G

 9.5. Size:296K  kec
 kta2014e.pdf 

SEMICONDUCTOR KTA2014E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B DIM MILLIMETERS Excellent hFE Linearity _ + A 1.60 0.10 D hFE(0.1mA)/hFE(2mA)=0.95(Typ.). _ + 2 B 0.85 0.10 _ + C 0.70 0.10 Low Noise NF=1dB(Typ.), 10dB(Max.). 3 1 D 0.27+0.10/-0.05 _ Complementary to KTC4075E. E 1.60 0.10 + _ +

 9.6. Size:51K  kec
 kta2014f.pdf 

SEMICONDUCTOR KTA2014F TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E Excellent hFE Linearity B hFE(0.1mA)/hFE(2mA)=0.95(Typ.). Low Noise NF=1dB(Typ.), 10dB(Max.). Complementary to KTC4075F. DIM MILLIMETERS 2 _ A 0.6 + 0.05 Thin Fine Pitch Small Package. 3 _ + B 0.8 0.05 C 0.38+0.02/-0.04 1 _ + D

 9.7. Size:647K  kec
 kta2013f.pdf 

SEMICONDUCTOR KTA2013F TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E Excellent hFE Linearity B hFE(0.1mA)/hFE(2mA)=0.95(Typ.). High hFE hFE=120 400. Complementary to KTC4074F. DIM MILLIMETERS 2 _ A 0.6 + 0.05 Thin Fine Pitch Small Package. 3 _ + B 0.8 0.05 C 0.38+0.02/-0.04 1 _ + D 0.2 0.05 _ +

 9.8. Size:72K  kec
 kta2012v.pdf 

SEMICONDUCTOR KTA2012V TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. FEATURES E A Collector Current is Large. B Collector Saturation Voltage is low. VCE(sat) -250mV at IC=-200mA/IB=-10mA. DIM MILLIMETERS 2 _ Complementary to KTC4072V. A 1.2 +0.05 _ B 0.8 +0.05 1 3 _ C 0.5 + 0.05 _ D 0.3 + 0.05 _ E 1.2 + 0.05 _ G 0.8 + 0.05 H 0.40 P P MAXI

 9.9. Size:636K  kec
 kta2014.pdf 

SEMICONDUCTOR KTA2014 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES M B M DIM MILLIMETERS Excellent hFE Linearity _ + A 2.00 0.20 D 2 _ hFE(0.1mA)/hFE(2mA)=0.95(Typ.). B 1.25 0.15 + _ + C 0.90 0.10 3 Low Noise NF=1dB(Typ.), 10dB(Max.). 1 D 0.3+0.10/-0.05 _ + E 2.10 0.20 Complementary to KTC4075

 9.10. Size:36K  kec
 kta2015.pdf 

SEMICONDUCTOR KTA2015 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES M B M DIM MILLIMETERS Excellent hFE Linearity _ A + 2.00 0.20 D 2 hFE(2)=25(Min.) at VCE=-6V, IC=-400mA. _ + B 1.25 0.15 _ + C 0.90 0.10 Complementary to KTC4076. 3 1 D 0.3+0.10/-0.05 _ E + 2.10 0.20 G 0.65 H 0.15+0.1/-0.06 J 1.3

 9.11. Size:297K  kec
 kta2014v.pdf 

SEMICONDUCTOR KTA2014V TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B Excellent hFE Linearity hFE(0.1mA)/hFE(2mA)=0.95(Typ.). DIM MILLIMETERS 2 _ Low Noise NF=1dB(Typ.), 10dB(Max.). A 1.2 +0.05 _ B 0.8 +0.05 Complementary to KTC4075V. 1 3 _ C 0.5 + 0.05 _ D 0.3 + 0.05 Very Small Package. _ E 1.2 + 0.05

 9.12. Size:686K  htsemi
 kta2014.pdf 

KTA2014 TRANSISTOR (PNP) SOT-323 FEATURES Low frequency power amplifier application 1. BASE 2. EMITTER Power switching application 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current Continuous 150 m

 9.13. Size:510K  htsemi
 kta2015.pdf 

KTA2015 TRANSISTOR (PNP) FEATURES Excellent hFE Linearity SOT 323 Complementary to KTC4076 APPLICATIONS General Purpose Switching MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage -35 V CBO 3. COLLECTOR VCEO Collector-Emitter Voltage -30 V V Emitter-Base Voltage -5 V EBO I Col

 9.14. Size:204K  lge
 kta2014.pdf 

KTA2014 SOT-323 Transistor(PNP) 1. BASE SOT-323 2. EMITTER 3. COLLECTOR Features Low frequency power amplifier application Power switching application MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters)

 9.15. Size:66K  wietron
 kta2015.pdf 

KTA2015 PNP General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-323 MAXIMUM RATINGS(Ta=25 C) Rating Symbol Value Unit VCBO Collector-Base Voltage -35 V Collector-Emitter Voltage VCEO -30 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current - Continuous -500 mA Total Device Dissipation PD 100 mW T =25 C A Tj C Junction Temperature +150 Tstg Storage Temperatur

 9.16. Size:1167K  kexin
 kta2014.pdf 

SMD Type Transistors PNP Transistors KTA2014 Features Excellent hFE Linearity Low Noise Small Package Complementary to KTC4075 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -5 Collector Current - Cont

 9.17. Size:1010K  kexin
 kta2015.pdf 

SMD Type Transistors PNP Transistors KTA2015 Features Excellent hFE Linearity Complementary to KTC4076 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -35 Collector - Emitter Voltage VCEO -30 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -500 mA Base Current IB