SEMICONDUCTOR KTC1020TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. BFEATURES Excellecnt hFE Linearity: hFE(2)=25Min. : VCE=6V, IC=400mA.DIM MILLIMETERSOA 3.20 MAX 1 Watt Amplifier Application.HM B 4.30 MAXC 0.55 MAX Complementary to KTA1021. _D 2.40 + 0.15E 1.27F 2.30C_+G 14.00 0.50H 0.60 MAXJ

DIP Type TransistorsNPN TransistorsKTC1020TO-92M Unit:mm6.0 0.2 Features1.0 0.1 Excelent hFE Linearity 1 Watt Amplifier Application0.50 0.1 Complementary to KTA102121 31.50 3.0 0.11.60 (max)Emitter1.2.Collector3.Base4.0(min) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 35

SEMICONDUCTOR KTC1027TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH VOLTAGE APPLICATION. B DFEATURE Complementary to KTA1023.DIM MILLIMETERSPDEPTH:0.2A 7.20 MAXB 5.20 MAXCC 0.60 MAXSMAXIMUM RATING (Ta=25 )D 2.50 MAXQE 1.15 MAXKCHA RACTERISTIC SYMBOL RATING UNITF 1.27G 1.70 MAXVCBOCollector-Base Voltage 120 VH 0.55 MAXFF_J 14.00 + 0.50V

SEMICONDUCTOR KTC1026TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH VOLTAGE APPLICATION. COLOR TV CLASS B SOUND OUTPUT APPLICATION.B DFEATURES High Voltage : VCEO=180V.DIM MILLIMETERSP High DC Current Gain.DEPTH:0.2A 7.20 MAXB 5.20 MAXCC 0.60 MAXSD 2.50 MAXQE 1.15 MAXKF 1.27G 1.70 MAXMAXIMUM RATINGS (Ta=25 )H 0.55 MAXFF_J 14.00 + 0.50CHAR

KTC1027WEITRONNPN TransistorP b Lead(Pb)-Free1. EMITTER2. COLLECTOR3. BASETO-92LMAXIMUM RATINGS (TA=25 unless otherwise noted)valueParameter Symbol UnitsCollector-Base Voltage VCBO 120 V 120 VCollector-Emitter Voltage VCEO 5 VEmitter-Base Voltage VEBO 0.8 ACollector Current -Continuous ICCollector Power Dissipation PC 0.75 WRJAThermal Resistance From

KTC1027 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92LM NPN Silicon NPN transistor in a TO-92LM Plastic Package. / Features KTA1023 Complementary pair with KTA1023. / Applications High voltage application. / Equivalent Circuit / Pinning 1 2 3 PIN