SEMICONDUCTOR KTC200TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B CFEATURES Excellent hFE Linearity: hFE(2)=25(Min.), (VCE=2V, IC=200mA).N DIM MILLIMETERS Complementary to KTA200.A 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85MAXIMUM RATING (Ta=25 )H 0.45_HJ 14.00 + 0.50CHARACTER

SEMICONDUCTOR KTC2028TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.ACFEATURES DIM MILLIMETERSSLow Collector-Emitter Saturation Voltage_A 10.0 + 0.3_+B 15.0 0.3E: VCE(sat)=2.0V(Max.).C _2.70 0.3+D 0.76+0.09/-0.05_E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +H 0.5+0.1/-0.05_+J 13.6 0.5L LRK _3.7 0.2+L

SEMICONDUCTOR KTC2022D/LTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.FEATURESAI C JLow Collector-Emitter Saturation VoltageDIM MILLIMETERS: VCE(sat)=-2.0V(Max.)._A 6.60 + 0.2_B 6.10 + 0.2_C 5.0 + 0.2_D 1.10 + 0.2_E 2.70 + 0.2_F 2.30 + 0.1H 1.00 MAX_I 2.30 + 0.2_J 0.5 + 0.1_HP K 2.00 + 0.20_L 0.50 + 0.

SEMICONDUCTOR KTC2020D/LTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.DPAK FOR SURFACE MOUNT APPLICATIONS. AI C JFEATURESDIM MILLIMETERS_A 6.60 + 0.2Low Collector Saturation Voltage_B 6.10 + 0.2_C 5.0 + 0.2: VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A._D 1.10 + 0.2_E 2.70 + 0.2Straight Lead (IPAK, "L" Suffix) _F 2.30 + 0.1

SEMICONDUCTOR KTC2025D/LTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORLOW FREQUENCY POWER AMP,MEDIUM SPEED SWITCHING APPLICATIONS A I C JFEATURES DIM MILLIMETERS_A 6.60 + 0.2_B 6.10 + 0.2High breakdown voltage VCEO 120V, high current 1A._C 5.0 + 0.2_D 1.10 + 0.2Low saturation voltage and good linearity of hFE. _E 2.70 + 0.2_F 2.30 + 0.1H 1.00 MAXC

SEMICONDUCTOR KTC2036TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.FEATURESLow Collector Saturation Voltage: VCE(sat)=1.0V(Max) at IC=2A, IB=0.2AMAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base Voltage 80 VVCEO60Collector-Emitter Voltage VVCER100VEBOEmitter-Base Voltage 10 VICCollector Current 3 AIB

SEMICONDUCTOR KTC2026TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.ACFEATURESDIM MILLIMETERSSLow Collector Saturation Voltage_A 10.0 0.3+_+B 15.0 0.3: VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A. EC _2.70 0.3+DComplementary to KTA1046. 0.76+0.09/-0.05_E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +H 0.5+0.1/-0.05_13.6

SEMICONDUCTOR KTC2027TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.ACFEATURES DIM MILLIMETERSSGood Linearity of hFE._A 10.0 0.3+_+B 15.0 0.3EC _2.70 0.3+D 0.76+0.09/-0.05_E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +H 0.5+0.1/-0.05_+J 13.6 0.5L LMAXIMUM RATING (Ta=25 )RK _3.7 0.2+L 1.2+0.25/-0.1CHA

SEMICONDUCTOR KTC2020DTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.DPAK FOR SURFACE MOUNT APPLICATIONS. FEATURESLow Collector Saturation Voltage: VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A.Straight Lead (IPAK, "L" Suffix) Complementary to KTA1040D/L.MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base Voltage 60 VVC

KTC2020D Rev.E May.-2016 DATA SHEET / Descriptions TO-252 NPN Silicon NPN transistor in a TO-252 Plastic Package. / Features , KTA1040D Low VCE(sat),complementary to KTA1040D. / Applications General purpose amplifier for surface mount application

KTC2022I(BR3DA2022I) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-251 NPN Silicon NPN transistor in a TO-251 Plastic Package. / Features , KTA1042I(BR3CA1042I) Low collector-emitter saturation voltage, complementary to KTA1042I(BR3CA1042I). / Applications General pu

DIP Type TransistorsNPN TransistorsKTC2028Unit: mmTO-220F0.200.200.202.540.200.70 Features Low Collector-Emitter Saturation Voltage Complementary to KTA10490.202.761.47max0.200.500.200.801. Base2.54typ2. Collector2.54typ3. Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base V

SMD Type TransistorsNPN TransistorsKTC2016TO-2209.90 0.20 4.50 0.20(8.70)+0.103.60 0.10 1.30 0.05 Features Low Collector Emitter Saturation Voltage. Complementary to KTA10361.27 0.10 1.52 0.1021 30.80 0.10 +0.100.50 0.05 2.40 0.202.54TYP 2.54TYP[2.54 0.20 ] [2.54 0.20 ]1. Base2. Collector10.00 0.203. Emit

DIP Type TransistorsNPN TransistorsKTC2026Unit: mmTO-220F0.200.200.202.54 Features0.200.70 Low saturation voltage Complementary to KTA10460.202.761.47max0.200.500.200.801. Base2.54typ2. Collector2.54typ3. Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 C

SMD Type TransistorsTransistorsNPN TransistorsKTC2020DTO -252U nit:m mFeatures+0.1 +0.156. 5 2.50-0.1 30-0.1+0.2 +0.85. 0.30-0.2 50-0.7 Low VCE(sat): 1.0V General purpose amplifier for surface mount applications. Complementary to KTA1040D.0.127+0.1 m ax0.80-0.1231+0.12. 0.3 60-0.11. BASE+0.154. 560-0.12. COLLECTOR3. EMITTERAb

SMD Type TransistorsNPN TransistorsKTC2018TO-2209.90 0.20 4.50 0.20(8.70)+0.103.60 0.10 1.30 0.05 Features Low Collector Emitter Saturation Voltage. High Breakdown Voltage Complementary to KTA10381.27 0.10 1.52 0.1021 30.80 0.10 +0.100.50 0.05 2.40 0.202.54TYP 2.54TYP[2.54 0.20 ] [2.54 0.20 ]1. Base2. Coll

isc Silicon NPN Power Transistor KTC2020DDESCRIPTIONHigh Breakdown Voltage-: V = 60V(Min)(BR)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh-definition CRT display horizontal deflectionoutput applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI