Биполярный транзистор KTC3103A1
Даташит. Аналоги
Наименование производителя: KTC3103A1
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.3
W
Макcимально допустимое напряжение коллектор-база (Ucb): 15
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 0.02
A
Предельная температура PN-перехода (Tj): 175
°C
Граничная частота коэффициента передачи тока (ft): 600
MHz
Статический коэффициент передачи тока (hfe): 40
- подбор биполярного транзистора по параметрам
KTC3103A1
Datasheet (PDF)
9.1. Size:557K mcc
ktc3199-bl-gr-o-y.pdf 
KTC3199-OMCCMicro Commercial ComponentsTMKTC3199-Y20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311KTC3199-GRPhone: (818) 701-4933Fax: (818) 701-4939 KTC3199-BLFeatures High DC Current Gain: hFE=70~700NPN General Excellent hFE Linearity: hFE(0.1mA)/hFE(2.0mA)=0.95(Typ) Low Noise: NF=1.0dB(Typ.), 10dB(Max.)Purpose Application Compl
9.2. Size:244K secos
ktc3198.pdf 
KTC3198 0.15A , 60V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURE TO-92 V(BR)CBO=60V CLASSIFICATION OF hFE (1) Product-Rank KTC3198-O KTC3198-Y KTC3198-GR Range 70~140 120~240 200~400 1Emitter Collector 2Base 3 3Collector Millimeter Millimeter 2 REF. REF.
9.3. Size:426K jiangsu
ktc3198.pdf 
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate TransistorsTO 92 KTC3198 TRANSISTOR (NPN)1.EMITTERFEATURES 2.COLLECTOR General Purpose Switching Application3.BASE Complementary to KTA1266. Equivalent Circuit C 3198
9.4. Size:562K jiangsu
ktc3199.pdf 
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate TransistorsTO 92S KTC3199 TRANSISTOR (NPN)1. EMITTERFEATURES 2. COLLECTOR High DC Current Gain3. BASE Complementary to KTA1267123 Equivalent Circuit C3199C3199=Device code Solid dot = Green molding compound device, if none, the normal device XXX=Code ORDERING INFORM
9.5. Size:794K kec
ktc3198.pdf 
SEMICONDUCTOR KTC3198TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.FEATURESExcellent hFE Linearity: hFE(2)=100(Typ.) at VCE=6V, IC=150mA: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).Low Noise : NF=1dB(Typ.). at f=1kHz.Complementary to KTA1266. MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base
9.6. Size:78K kec
ktc3199.pdf 
SEMICONDUCTOR KTC3199TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATIONSWITCHING APPLICATION.BFEATURES High DC Current Gain : hFE=70~700. Excellent hFE LinearityDIM MILLIMETERSOA 3.20 MAX: hFE(0.1mA)/hFE(2mA)=0.95(Typ.).HM B 4.30 MAXC 0.55 MAX Low Noise : NF=1dB(Typ.), 10dB(Max.)._D 2.40 + 0.15E 1.27 Complementary to KTA1267.F 2.30
9.7. Size:94K kec
ktc3193.pdf 
SEMICONDUCTOR KTC3193TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION.BFEATURE High Power Gain : Gpe=30dB(Typ.) (f=10.7MHz). Recommended for FM IF, OSC Stage and AM CONV, IF Stage.DIM MILLIMETERSOA 3.20 MAXHM B 4.30 MAXC 0.55 MAX_D 2.40 + 0.15E 1.27F 2.30C_MAXIMUM RATING (Ta=25 )+G 14.00 0.50
9.8. Size:98K kec
ktc3197.pdf 
SEMICONDUCTOR KTC3197TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH FREQUENCY APPLICATION. VHF BAND AMPLIFIER APPLICATION.B CFEATURES High Gain : Gpe=33dB(Typ.) (f=45MHz).N DIM MILLIMETERS Good Linearity of hFE.A 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85MAXIMUM RATING (Ta=25 )H 0.45_HJ 14.00 + 0.50CHARACTERISTIC SYMBOL RATING
9.9. Size:75K kec
ktc3113.pdf 
SEMICONDUCTOR KTC3113TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.BFEATURE High DC Current Gain : hFE=600 3600. Small Package.DIM MILLIMETERSOA 3.20 MAXHM B 4.30 MAXC 0.55 MAX_D 2.40 + 0.15E 1.27MAXIMUM RATING (Ta=25 )F 2.30C_+G 14.00 0.50CHARACTERISTIC SYMBOL RATING UNITH 0.60 MAXJ 1.05VCBO
9.10. Size:114K kec
ktc3194.pdf 
SEMICONDUCTOR KTC3194TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION.B CFEATURES Small Reverse Transfer Capacitance: Cre=0.7pF(Typ.). N DIM MILLIMETERS Low Noise Figure : NF=2.5dB(Typ.) (f=100MHz).A 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85MAXIMUM RATING (Ta=25 )
9.11. Size:84K kec
ktc3121.pdf 
SEMICONDUCTOR KTC3121TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORTV TUNER, UHF OSCILLATOR APPLICATION.(COMMON BASE) TV TUNER, UHF CONVERTER APPLICATION.EL B L(COMMON BASE) DIM MILLIMETERS_+2.93 0.20AB 1.30+0.20/-0.15FEATURESC 1.30 MAX2 High Transition Frequency : fT=1500MHz (Typ.). 3 D 0.45+0.15/-0.05E 2.40+0.30/-0.20 Excellent hFE Linearity. 1G 1.90
9.12. Size:114K kec
ktc3195.pdf 
SEMICONDUCTOR KTC3195TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION.BFEATURES Small Reverse Transfer Capacitance: Cre=0.7pF(Typ.). DIM MILLIMETERSOA 3.20 MAX Low Noise Figure : NF=2.5dB(Typ.) (f=100MHz).HM B 4.30 MAXC 0.55 MAX_D 2.40 + 0.15E 1.27F 2.30C_+G 14.00 0.50H 0.60
9.13. Size:60K kec
ktc3199l.pdf 
SEMICONDUCTOR KTC3199LTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORLOW NOISE AUDIO AMPLIFIER APPLICATION.FEATURES B High DC Current Gain : hFE=70 700. Excellent hFE Linearity: hFE(0.1mA)/hFE(2mA)=0.95(Typ.).DIM MILLIMETERSOA 3.20 MAX Low Noise : NF=0.2dB(Typ.), 3dB(Max.).HM B 4.30 MAXC 0.55 MAX Complementary to KTA1267L._D 2.40 + 0.15E 1.27F 2.30C_+
9.14. Size:66K kec
ktc3198a.pdf 
SEMICONDUCTOR KTC3198ATECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.B CFEATURESExcellent hFE Linearity: hFE(2)=100(Typ.) at VCE=6V, IC=150mA: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).N DIM MILLIMETERSA 4.70 MAXLow Noise : NF=1dB(Typ.). at f=1kHz. EKB 4.80 MAXGComplementary to KTA1266A. C 3.70 MAXDD 0.45E
9.15. Size:75K kec
ktc3112.pdf 
SEMICONDUCTOR KTC3112TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.B CFEATURE High DC Current Gain : hFE=600 3600.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDMAXIMUM RATING (Ta=25 )D 0.45E 1.00CHARACTERISTIC SYMBOL RATING UNITF 1.27G 0.85VCBOCollector-Base Voltage 50 V H 0.45_HJ 14.00 +
9.16. Size:72K kec
ktc3190.pdf 
SEMICONDUCTOR KTC3190TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION.HF BAND AMPLIFIER APPLICATION.B CFEATURE Low Noise Figure : NF=3.5dB(Max.) (f=1MHz).N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00MAXIMUM RATING (Ta=25 )F 1.27G 0.85CHARACTERISTIC SYMBOL RATING UNITH 0.45_HJ 14.00 + 0.
9.17. Size:29K kec
ktc3198l.pdf 
SEMICONDUCTOR KTC3198LTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORLOW NOISE AMPLIFIER APPLICATION.B CFEATURES Excellent hFE Linearity: hFE(2)=100(Typ.) at VCE=6V, IC=150mA: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).N DIM MILLIMETERSLow Noise : NF=0.2dB(Typ.). f=(1kHz).A 4.70 MAXEKB 4.80 MAXComplementary to KTA1266L. (O,Y,GR class) GC 3.70 MAXDD 0.45E 1.00F 1.2
9.18. Size:91K kec
ktc3192.pdf 
SEMICONDUCTOR KTC3192TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION.B CFEATURE High Power Gain : Gpe=29dB(Typ.) (f=10.7MHz).N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDMAXIMUM RATING (Ta=25 )D 0.45E 1.00CHARACTERISTIC SYMBOL RATING UNITF 1.27G 0.85VCBOCollector-Base Voltage 35 VH 0
9.19. Size:395K kec
ktc3114.pdf 
SEMICONDUCTOR KTC3114TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. ABSWITCHING APPLICATION.DCEFEATURE FHigh DC Current Gain : hFE=600 3600.GHDIM MILLIMETERSJA 8.3 MAXMAXIMUM RATING (Ta=25 )KB 5.8LC 0.7CHARACTERISTIC SYMBOL RATING UNIT_+D 3.2 0.1E 3.5VCBOCollector-Base Voltage 50 V_+F 11.0 0.3G 2.9 MAX
9.20. Size:190K lge
ktc3197.pdf 
KTC3197(NPN)TO-92 Transistors 1.EMITTER TO-92 2. COLLECTOR 3. BASE Features High Gain: Gpe=33dB(Typ) (f=45MHZ). Good linearity of hFE MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 VVCEO Collector-Emitter Voltage 25 VVEBO Emitter-Base Voltage 4 VIC Collector Current -Continuous 50 mA Dimensions in
9.21. Size:156K lge
ktc3195.pdf 
KTC3195TO-92S Transistor (NPN) 1. EMITTER TO-92S 2. COLLECTOR 1 2 3 3. BASE Features Small reverse transfer capacitance Cre=0.7pF(Typ) Low noise Figure: NF=2.5dB(Typ.) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4 V IC Collector Cur
9.22. Size:387K lge
ktc3192.pdf 
KTC3192(NPN)TO-92 TransistorsTO-92 1. COLLECTOR 2. EMITTER 3. BASE Features High power gain: Gpe=29dB(Typ)(f=10.7MHZ) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 35 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 4 V IC Collector Current -Continuous 50 mA Dimensions in inches and (millim
9.23. Size:999K blue-rocket-elect
ktc3198.pdf 
KTC3198 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features h ,, KTA1266 FEExcellent hFE linearity, low noise, complementary pair with KTA1266. / Applications General amplifier
9.24. Size:448K blue-rocket-elect
ktc3199m.pdf 
KTC3199M(BR3DG3199M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features , h , FEHigh DC current gain, excellent hFE linearity, low noise / Applications General amplifier
9.25. Size:1736K kexin
ktc3198.pdf 
DIP Type TransistorsNPN TransistorsKTC3198Unit:mmTO-924.8 0.3 3.8 0.3 Features Excellent hFE Linearity Low Noise0.60 Max Complementary to KTA12660.45 0.1 0.521 31.Emitter2.Collector1.272.54 3.Base Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 5
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