Биполярный транзистор KTC3228 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: KTC3228
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 1 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 160 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 175 °C
Статический коэффициент передачи тока (hfe): 60
Корпус транзистора: TO92
KTC3228 Datasheet (PDF)
ktc3228.pdf
SEMICONDUCTOR KTC3228TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORCOLOR TV VERT. DEFELECTION OUTPUT APPLICATION.COLOR TV CLASS B SOUND OUTPUT APPLICATION.FEATURES High Voltage : VCEO=160V.Large Continuous Collector Current Capability.Recommended for Vert. Deflection Output & Sound OutputApplications for Line Operated TV.Complementary to KTA1275._+_+MAXIMUM R
ktc3228.pdf
KTC3228 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92LM NPN Silicon NPN transistor in a TO-92LM Plastic Package. / Features KTA1275 High voltage, complementary to KTA1275. / Applications ,Color TV vertical deflection output, color TV class B s
ktc3227.pdf
SEMICONDUCTOR KTC3227TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. B DFEATURES Complementary to KTA1274.DIM MILLIMETERSPDEPTH:0.2A 7.20 MAXB 5.20 MAXCC 0.60 MAXSMAXIMUM RATING (Ta=25 )D 2.50 MAXQE 1.15 MAXKCHARACTERISTIC SYMBOL RATING UNITF 1.27G 1.70 MAXVCBOCollector-Base Voltage 80 V H 0.55 MAXFF_J 14.00 + 0.50
ktc3226.pdf
SEMICONDUCTOR KTC3226TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSTROBO FLASH APPLICATION.HIGH CURRENT APLICATION.B DFEATURES High DC Current Gain and Excellent hFE LinearityDIM MILLIMETERSP: hFE(1)=140 600 (VCE=1V, IC=0.5A)DEPTH:0.2A 7.20 MAX: hFE(2)=70(Min.), 200(Typ.) (VCE=1V, IC=2A). B 5.20 MAXCC 0.60 MAXS Low Saturation Voltage D 2.50 MAXQE 1.15 MAX
ktc3229.pdf
SEMICONDUCTOR KTC3229TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORCOLOR TV CHROMA OUTPUT APPLICATION.ACFEAUTRESDIM MILLIMETERSSHigh Voltage : VCEO=300V._A 10.0 + 0.3_+B 15.0 0.3ESmall Collector Output Capacitance : Cob=4.0pF(Max.).C _2.70 0.3+D 0.76+0.09/-0.05_E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +H 0.5+0.1/-0.05_+J 13.6 0.5L LMA
ktc3229.pdf
isc Silicon NPN Power Transistor KTC3229DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV chroma output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050