Биполярный транзистор KTC3882 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: KTC3882
Маркировка: HF
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 15 V
Макcимальный постоянный ток коллектора (Ic): 0.05 A
Предельная температура PN-перехода (Tj): 175 °C
Статический коэффициент передачи тока (hfe): 40
Корпус транзистора: SOT23
KTC3882 Datasheet (PDF)
ktc3882.pdf
SEMICONDUCTOR KTC3882TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH FREQUENCY APPLICATION.TV TUNER, VHF OSCILLATOR APPLICATION.EL B LDIM MILLIMETERS_+2.93 0.20AB 1.30+0.20/-0.15C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.20MAXIMUM RATING (Ta=25 )1G 1.90H 0.95CHARACTERISTIC SYMBOL RATING UNITJ 0.13+0.10/-0.05K 0.00 ~ 0.10VCBOCollector-Base Vol
ktc3882.pdf
SMD Type TransistorsNPN TransistorsKTC3882SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=15V1 2 High frequency application .TV Tuner,VHF+0.1+0.050.95 -0.1 0.1 -0.011.9+0.1-0.1 Oscillator application1.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25
ktc3883.pdf
SEMICONDUCTOR KTC3883TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH FREQUENCY APPLICATION.VHF BAND AMPLIFIER APPLICATION. EL B LFEATURESDIM MILLIMETERS High Current : IC(MAX)=200mA._+2.93 0.20AB 1.30+0.20/-0.15 High Transition Frequency : fT=500MHz(Typ.). C 1.30 MAX2 Low Voltage Operating. 3 D 0.45+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95J 0.13+0.
ktc3880s.pdf
SEMICONDUCTOR KTC3880STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION.EL B LFEATURESDIM MILLIMETERSSmall Reverse Transfer Capacitance_+2.93 0.20AB 1.30+0.20/-0.15: Cre=0.7pF(Typ.)C 1.30 MAX2Low Noise Figure : NF=2.5dB(Typ.) (f=100MHz). 3 D 0.45+0.15/-0.05E 2.40+0.30/-0.201G 1.90
ktc3881s.pdf
SEMICONDUCTOR KTC3881STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH FREQUENCY APPLICATION. VHF BAND AMPLIFIER APPLICATION.EL B LFEATURESDIM MILLIMETERS Good Linerarity of fT._+2.93 0.20AB 1.30+0.20/-0.15C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95MAXIMUM RATING (Ta=25 )J 0.13+0.10/-0.05K 0.00 ~ 0.10CHARACTERISTIC SYMBOL RATING
ktc3880.pdf
KTC3880 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features , Small reverse transfer capacitance, low noise figure. / Applications High frequency low noise amplifier. /
ktc3880lt1.pdf
SEMICONDUCTOR KTC3880LT1 Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR Low Noise Figure NF=2.5DBTYPf=100MHZ Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo 40 V Collector-Emitter Voltage Vceo 30 V Emitter-Base Voltage Vebo 4 V Collector Curren
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