SEMICONDUCTOR KTC4369TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. ACFEATURES DIM MILLIMETERSSGood Linearity of hFE._A 10.0 + 0.3_+B 15.0 0.3EComplementary to KTA1658.C _2.70 0.3+D 0.76+0.09/-0.05_E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +H 0.5+0.1/-0.05_+J 13.6 0.5L LMAXIMUM RATING (Ta=25 )RK _3.7 0

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate TransistorsSOT-89-3L KTC4377 TRANSISTOR (NPN)1. BASEFEATURES Low voltage 2. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTERSymbol Parameter Value UnitVCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 6 V IC Collector Curr

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTC4373 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Small Flat Package High Voltage Application 3. EMITTER High Voltage High Transition Frequency MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 120 V

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTC4375 TRANSISTOR (NPN) 1. BASE FEATURES Low voltage 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value UnitVCBO 30 VCollector-Base Voltage VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Colle

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTC4376 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Small Flat Package High Current Application 3. EMITTER Complementary to KTA1664 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 35 V VCEO Collector-E

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate TransistorsTO 220F KTC4370A TRANSISTOR (NPN)1. BASEFEATURES 2. COLLECTOR High Transition Frequency Complementary to KTA1659A3. EMITTER High Voltage Application Equivalent Circuit KTC4370A=Device code Solid dot=Green moldinn compound device, if none,the normal deviceXXXX=Code

JJIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTC4374 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Small Flat Package General Purpose Application 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEB

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTC4379 TRANSISTOR (NPN) 1. BASE FEATURES Low saturation voltage 2. COLLECTOR High speed switching time Complementary to KTA1666 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 50 V VCEO Co

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTC4378 TRANSISTOR (NPN) 1. BASE FEATURES High voltage 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value UnitVCBO 80 VCollector-Base Voltage VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Coll

SEMICONDUCTOR KTC4377TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSTROBO FLASH APPLICATION.HIGH CURRENT APPLICATION.ACFEATURESHHigh DC Current Gain and Excellent hFE Linearity G: hFE(1)=140 600(VCE=1V, IC=0.5A): hFE(2)=70(Min.), 140(Typ.) (VCE=1V, IC=2A).DIM MILLIMETERSLow Saturation Voltage A 4.70 MAXD _+D B 2.50 0.20: VCE(sat)=0.5V(Max.) (IC=2A, IB=50mA).

SEMICONDUCTOR KTC4373TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH VOLTAGE APPLICATION.FEATURESACHigh Voltage : VCEO=120V.HHigh Transition Frequency : fT=120MHz(Typ.).G1W(Monunted on Ceramic Substrate).Small Flat Package.DIM MILLIMETERSComplementary to KTA1661.A 4.70 MAXD _+D B 2.50 0.20K C 1.70 MAXD 0.45+0.15/-0.10F FE 4.25 MAX_+F 1.50 0.10

SEMICONDUCTOR KTC4380TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH VOLTAGE APPLICATIONFEATURES High Voltage : VCEO=160V.ACLarge Continuous Collector Current Capability.HRecommended for LED Drive Application.GDIM MILLIMETERSA 4.70 MAX_+B 2.50 0.20C 1.70 MAXDDD 0.45+0.15/-0.10KE 4.25 MAX_+F F F 1.50 0.10G 0.40 TYPMAXIMUM RATING (Ta=25

SEMICONDUCTOR KTC4375TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT APPLICATION. FEATURES1W (Mounted on Ceramic Substrate).ACSmall Flat Package. HComplementary to KTA1663.L GMDIM MILLIMETERSA 4.70 MAXN_+B 2.50 0.20C 1.70 MAXDDMAXIMUM RATING (Ta=25)D 0.45+0.15/-0.10KE 4.25 MAX_+CHARACTERISTIC SYMBOL RATING UNIT F F F 1.50

SEMICONDUCTOR KTC4376TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT APPLICATION. FEATURESAC1W (Mounted on Ceramic Substrate).HSmall Flat Package. GComplementary to KTA1664.DIM MILLIMETERSA 4.70 MAXD _+D B 2.50 0.20K C 1.70 MAXD 0.45+0.15/-0.10MAXIMUM RATING (Ta=25 )F FE 4.25 MAX_+F 1.50 0.10CHARACTERISTIC SYMBOL RATING UNITG 0.40 TYP

SEMICONDUCTOR KTC4370/ATECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH VOLTAGE APPLICATION.ACFEATURESDIM MILLIMETERSSHigh Transition Frequency : fT=100MHz(Typ.)._A 10.0 + 0.3_+B 15.0 0.3EComplementary to KTA1659/A.C _2.70 0.3+D 0.76+0.09/-0.05_E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +H 0.5+0.1/-0.05_+J 13.6 0.5L LMAXIMUM RATING (T

SEMICONDUCTOR KTC4374TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. FEATURESAC1W (Mounted on Ceramic Substrate).HSmall Flat Package. GComplementary to KTA1662.DIM MILLIMETERSA 4.70 MAXD _+D B 2.50 0.20K C 1.70 MAXD 0.45+0.15/-0.10MAXIMUM RATING (Ta=25 )F FE 4.25 MAX_+F 1.50 0.10CHARACTERISTIC SYMBOL RATING UNITG 0.40

SEMICONDUCTOR KTC4379TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORPOWER AMPLIFIER APPLICATIONS.POWER SWITCHING APPLICATIONS. ACFEATURESHLow Saturation Voltage G: VCE(sat)=0.5V(Max.) (IC=1A)High Speed Switching Time : tstg=1.0 S(Typ.)DIM MILLIMETERSPC=1 2W (Mounted on Ceramic Substrate)A 4.70 MAXD _+D B 2.50 0.20Small Flat Package.K C 1.70 MAXD 0.45+0.15/

SEMICONDUCTOR KTC4370/ATECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH VOLTAGE APPLICATION.ACFEATURESDIM MILLIMETERSSHigh Transition Frequency : fT=100MHz(Typ.)._A 10.0 + 0.3_+B 15.0 0.3EComplementary to KTA1659/A.C _2.70 0.3+D 0.76+0.09/-0.05_E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +H 0.5+0.1/-0.05_+J 13.6 0.5L LMAXIMUM RATING (T

SEMICONDUCTOR KTC4378TECHNICAL DATAEPITAXIAL PLANAR NPN TRANSISTORVOLTAGE REGULATOR, RELAY, LAMP DRIVER, INDUSTRIAL USEACFEATURESHHigh Voltage : VCEO=60V(Min.). GHigh Current : IC(Max.)=1A.High Transition Frequency : fT=150MHz (Typ.).DIM MILLIMETERSWide Area of Safe Operation.A 4.70 MAXD _+D B 2.50 0.20Complementary to KTA1668.K C 1.70 MAXD 0.

SEMICONDUCTOR KTC4372TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH VOLTAGE SWITCHING APPLICATION.FEATURES ACHigh Voltage : VCEO=150V.HHigh Transition Frequency : fT=120MHz(Typ.).G1W (Monunted on Ceramic Substrate).Small Flat Package.DIM MILLIMETERSComplementary to KTA1660.A 4.70 MAXD _+D B 2.50 0.20K C 1.70 MAXD 0.45+0.15/-0.10F FE 4.25 MAX_+F

KTC4377SOT-89 TRANSISTOR (NPN) 1. BASE FEATURES Low voltage 2. COLLECTOR 1 2 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. EMITTER 3 Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 2 A PC Collector Power Dissipation 0.5 W TJ Junction Tempera

KTC4373TRANSISTOR (NPN) SOT-89-3L FEATURES 1. BASE Small Flat Package High Voltage Application 2. COLLECTOR High Voltage3. EMITTER High Transition Frequency MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current 800

KTC4375TRANSISTOR (NPN) SOT-89 FEATURES 1. BASE Low voltage 2. COLLECTOR 1 2 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. EMITTER 3 Symbol Parameter Value UnitsVCBO 30 VCollector-Base Voltage VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.5 W TJ Junction Temp

KTC4376TRANSISTOR (NPN) SOT-89-3L FEATURES Small Flat Package 1. BASE High Current Application 2. COLLECTOR Complementary to KTA1664 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current 800 mA PC Collector

KTC4374TRANSISTOR (NPN) SOT-89-3L FEATURES 1. BASE Small Flat Package General Purpose Application 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current 400 mA PC Collector Power Dissipation 500 mW

KTC4379TRANSISTOR (NPN) SOT-89 FEATURES 1. BASE Low saturation voltage High speed switching time 2. COLLECTOR 1 Complementary to KTA1666 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Con

KTC4378TRANSISTOR (NPN) SOT-89 1. BASE FEATURES High voltage 2. COLLECTOR 1 2 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. EMITTER 3 Symbol Parameter Value UnitsVCBO 80 VCollector-Base Voltage VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1 A PC Collector Dissipation 0.5 W TJ Junction Temperature

KTC4372TRANSISTOR (NPN) SOT-89-3L FEATURES Small Flat Package1. BASE High Voltage Switching Application 2. COLLECTOR High Voltage High Transition Frequency 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Cur

KTC4375 SOT-89 Transistor(NPN)1. BASE SOT-891 2. COLLECTOR 4.62 B4.41.61.83. EMITTER 1.43 1.42.64.25Features 2.43.75 0.8 Low voltage MIN0.530.400.480.442x)0.13 B0.35 0.371.5MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.0Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO 30 VCollector-Base Voltage

KTC4377 SOT-89 Transistor(NPN)1. BASE 1 SOT-892. COLLECTOR 2 4.6B4.41.63. EMITTER 1.83 1.41.4Features2.64.252.43.75 Low voltage 0.8MIN0.530.400.480.442x)0.13 B0.35 0.37MAXIMUM RATINGS (TA=25 unless otherwise noted) 1.53.0Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltage 30 V VCEO C

KTC4378 SOT-89 Transistor(NPN)1. BASE SOT-892. COLLECTOR 1 4.6B4.43. EMITTER 1.62 1.81.41.43 Features2.64.252.43.75 High voltage 0.8MIN0.530.400.480.442x)0.13 B0.35 0.371.5MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.0Symbol Parameter Value Units Dimensions in inches and (millimeters)VCBO 80 VCollector-Base Voltage

KTC4379 SOT-89 Transistor(NPN)1. BASE SOT-892. COLLECTOR 1 4.6B2 4.43. EMITTER 1.61.81.41.43 Features2.64.252.43.75 Low saturation voltage 0.8MIN0.53 High speed switching time 0.400.480.442x)0.13 B0.35 0.37 Complementary to KTA1666 1.53.0MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimete

KTC4377NPN EPITAXIAL PLANAR TRANSISTORP b Lead(Pb)-Free1. BASE2. COLLECTOR3. EMITTER 123Features:SOT-89* Low saturation voltage, VCE(sat) 0.5V@2A/50mA* Excellent DC current gain characteristics.Mechanical Data:* Case : Molded PlasticABSOLUTE MAXIMUM RATINGS(TaRating Symbol Value UnitVCBO30 VCollector-Base VoltageVCEO10 VCollector-Emitter VoltageV

KTC4375NPN EPITAXIAL PLANAR TRANSISTORP b Lead(Pb)-Free1. BASE2. COLLECTOR3. EMITTER 123SOT-89ABSOLUTE MAXIMUM RATINGS(TaRating Symbol Value UnitVCBO30 VCollector-Base VoltageVCEO30 VCollector-Emitter VoltageVVEBO 5Emitter-Base VoltageICCollector Current-Continuous 1.5 APC0.5 WCollector Power DisspationJunction Temperature TJ 150 C-55 to 150

KTC4379NPN EPITAXIAL PLANAR TRANSISTORP b Lead(Pb)-Free1. BASE2. COLLECTOR3. EMITTER 123SOT-89ABSOLUTE MAXIMUM RATINGS(TaRating Symbol Value UnitVCBO50 VCollector-Base VoltageVCEO50 VCollector-Emitter VoltageVVEBO 5Emitter-Base VoltageICCollector Current-Continuous 2.0 APC0.5 WCollector Power DisspationJunction Temperature TJ 150 C-55 to 150

KTC4375 Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features , KTA1663 Small flat package, complementary to KTA1663. / Applications High current application. / Equivalent Circuit

KTC4379 Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features , KTA1666Low saturation voltage, high speed switching time, small flat package Complementary to KTA1666. / Applications

SMD Type TransistorsNPN TransistorsKTC43731.70 0.1 Features High Voltage Switching Application High Voltage High Transition Frequency0.42 0.10.46 0.1 Comlementary to KTA16611.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 120 V Em

SMD Type TransistorsNPN TransistorsKTC43751.70 0.1 Features Low voltage Comlementary to KTA16630.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 1.5 A Colle

SMD Type TransistorsNPN TransistorsKTC43761.70 0.1 Features 1W (Mounted on Ceramic Substrate) Small Flat Package Complementary to KTA16640.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 35 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VEBO 5

DIP Type TransistorsNPN TransistorsKTC4370AUnit: mmTO-220F0.200.200.202.540.200.70 Features High Transition Frequency Complementary to KTA1659A0.202.761.47max0.200.500.200.801. Base2.54typ2. Collector2.54typ3. Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 1

SMD Type TransistorsNPN TransistorsKTC43791.70 0.1 Features Low saturation voltage High speed switching time Complementary to KTA16660.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 5 Co

SMD Type TransistorsNPN TransistorsKTC43781.70 0.1 Features High Voltage and High fT High Current Complementary to KTA16680.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCEO 60 V Emitter - Base Voltage VEBO 5 Collector Cur

SMD Type TransistorsNPN TransistorsKTC43721.70 0.1 Features High Voltage Switching Application High Voltage0.42 0.1 High Transition Frequency 0.46 0.1 Comlementary to KTA16601.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 200 Collector - Emitter Voltage VCEO 150 V Emi

DIP Type TransistorsNPN TransistorsKTC4370Unit: mmTO-220F0.200.200.202.540.200.70 Features High Transition Frequency Complementary to KTA16590.202.761.47max0.200.500.200.801. Base2.54typ2. Collector2.54typ3. Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 160

RoHS KTC4347SOT-89 KTC4373 TRANSISTOR (NPN) 1. BASE FEATURES Power dissipation 2. COLLECTOR 1 PCM: 500 mW (Tamb=25) 2 3. EMITTER 3 Collector current ICM: 800 mA Collector-base voltage V(BR)CBO: 120 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

KTC4375NPN Plastic-Encapsulate TransistorsEncapsulate Transistors FEATURES Low voltage MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitSOT-89VCBO 30 VCollector-Base Voltage 1. BASE 2. COLLECTOR 3. EMITTER VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation

KTC4373YNPN-General use transistor1W 1A 80V ApplicationsCan be used for switching and amplifying in various electrical and electronic equipments. SOT-894Circuit MARKING 1 2 3 CYMax ratings Parameters Symbol RatingUnit VCEO 80 VCollectoremitter voltageIB=0 VCBO 100 VCollectorbase voltageIE=0 VEBO 5 VEmitter base voltageIC=0 I

KTC4374NPN-General use transistor1W 0. 8A 80V ApplicationsCan be used for switching and amplifying in various electrical and electronic equipments. Circuit 4SOT-89MARKING 1 2 3EYMax ratings Parameters Symbol RatingUnit VCEO 80 VCollectoremitter voltageIB=0 VCBO 80 VCollectorbase voltageIE=0 VEBO 5 VEmitter base voltageIC=0

isc Silicon NPN Power Transistor KTC4370ADESCRIPTIONHigh Collector-Emitter Breakdown VoltageV = 180V(Min)CEOComplement to Type KTA1659AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 180 VCBO

isc Silicon NPN Power Transistor KTC4370DESCRIPTIONHigh Collector-Emitter Breakdown VoltageV = 160V(Min)CEOComplement to Type KTA1659Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 160 VCBO