KTC4376 - описание и поиск аналогов

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTC4376 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Small Flat Package High Current Application 3. EMITTER Complementary to KTA1664 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 35 V VCEO Collector-E

SEMICONDUCTOR KTC4376 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURES A C 1W (Mounted on Ceramic Substrate). H Small Flat Package. G Complementary to KTA1664. DIM MILLIMETERS A 4.70 MAX D _ + D B 2.50 0.20 K C 1.70 MAX D 0.45+0.15/-0.10 MAXIMUM RATING (Ta=25 ) F F E 4.25 MAX _ + F 1.50 0.10 CHARACTERISTIC SYMBOL RATING UNIT G 0.40 TYP

KTC4376 TRANSISTOR (NPN) SOT-89-3L FEATURES Small Flat Package 1. BASE High Current Application 2. COLLECTOR Complementary to KTA1664 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current 800 mA PC Collector

SMD Type Transistors NPN Transistors KTC4376 1.70 0.1 Features 1W (Mounted on Ceramic Substrate) Small Flat Package Complementary to KTA1664 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 35 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VEBO 5

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTC4377 TRANSISTOR (NPN) 1. BASE FEATURES Low voltage 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value Unit VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 6 V IC Collector Curr

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTC4373 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Small Flat Package High Voltage Application 3. EMITTER High Voltage High Transition Frequency MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 120 V

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTC4375 TRANSISTOR (NPN) 1. BASE FEATURES Low voltage 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value Unit VCBO 30 V Collector-Base Voltage VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Colle

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors TO 220F KTC4370A TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR High Transition Frequency Complementary to KTA1659A 3. EMITTER High Voltage Application Equivalent Circuit KTC4370A=Device code Solid dot=Green moldinn compound device, if none,the normal device XXXX=Code

JJIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTC4374 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Small Flat Package General Purpose Application 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEB

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTC4379 TRANSISTOR (NPN) 1. BASE FEATURES Low saturation voltage 2. COLLECTOR High speed switching time Complementary to KTA1666 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V VCEO Co

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTC4378 TRANSISTOR (NPN) 1. BASE FEATURES High voltage 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value Unit VCBO 80 V Collector-Base Voltage VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Coll

SEMICONDUCTOR KTC4377 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. A C FEATURES H High DC Current Gain and Excellent hFE Linearity G hFE(1)=140 600(VCE=1V, IC=0.5A) hFE(2)=70(Min.), 140(Typ.) (VCE=1V, IC=2A). DIM MILLIMETERS Low Saturation Voltage A 4.70 MAX D _ + D B 2.50 0.20 VCE(sat)=0.5V(Max.) (IC=2A, IB=50mA).

SEMICONDUCTOR KTC4373 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. FEATURES A C High Voltage VCEO=120V. H High Transition Frequency fT=120MHz(Typ.). G 1W(Monunted on Ceramic Substrate). Small Flat Package. DIM MILLIMETERS Complementary to KTA1661. A 4.70 MAX D _ + D B 2.50 0.20 K C 1.70 MAX D 0.45+0.15/-0.10 F F E 4.25 MAX _ + F 1.50 0.10

SEMICONDUCTOR KTC4375 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURES 1W (Mounted on Ceramic Substrate). A C Small Flat Package. H Complementary to KTA1663. L G M DIM MILLIMETERS A 4.70 MAX N _ + B 2.50 0.20 C 1.70 MAX D D MAXIMUM RATING (Ta=25 ) D 0.45+0.15/-0.10 K E 4.25 MAX _ + CHARACTERISTIC SYMBOL RATING UNIT F F F 1.50

SEMICONDUCTOR KTC4370/A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. A C FEATURES DIM MILLIMETERS S High Transition Frequency fT=100MHz(Typ.). _ A 10.0 + 0.3 _ + B 15.0 0.3 E Complementary to KTA1659/A. C _ 2.70 0.3 + D 0.76+0.09/-0.05 _ E 3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + H 0.5+0.1/-0.05 _ + J 13.6 0.5 L L MAXIMUM RATING (T

SEMICONDUCTOR KTC4374 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES A C 1W (Mounted on Ceramic Substrate). H Small Flat Package. G Complementary to KTA1662. DIM MILLIMETERS A 4.70 MAX D _ + D B 2.50 0.20 K C 1.70 MAX D 0.45+0.15/-0.10 MAXIMUM RATING (Ta=25 ) F F E 4.25 MAX _ + F 1.50 0.10 CHARACTERISTIC SYMBOL RATING UNIT G 0.40

SEMICONDUCTOR KTC4379 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. A C FEATURES H Low Saturation Voltage G VCE(sat)=0.5V(Max.) (IC=1A) High Speed Switching Time tstg=1.0 S(Typ.) DIM MILLIMETERS PC=1 2W (Mounted on Ceramic Substrate) A 4.70 MAX D _ + D B 2.50 0.20 Small Flat Package. K C 1.70 MAX D 0.45+0.15/

SEMICONDUCTOR KTC4370/A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. A C FEATURES DIM MILLIMETERS S High Transition Frequency fT=100MHz(Typ.). _ A 10.0 + 0.3 _ + B 15.0 0.3 E Complementary to KTA1659/A. C _ 2.70 0.3 + D 0.76+0.09/-0.05 _ E 3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + H 0.5+0.1/-0.05 _ + J 13.6 0.5 L L MAXIMUM RATING (T

SEMICONDUCTOR KTC4378 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VOLTAGE REGULATOR, RELAY, LAMP DRIVER, INDUSTRIAL USE A C FEATURES H High Voltage VCEO=60V(Min.). G High Current IC(Max.)=1A. High Transition Frequency fT=150MHz (Typ.). DIM MILLIMETERS Wide Area of Safe Operation. A 4.70 MAX D _ + D B 2.50 0.20 Complementary to KTA1668. K C 1.70 MAX D 0.

SEMICONDUCTOR KTC4372 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE SWITCHING APPLICATION. FEATURES A C High Voltage VCEO=150V. H High Transition Frequency fT=120MHz(Typ.). G 1W (Monunted on Ceramic Substrate). Small Flat Package. DIM MILLIMETERS Complementary to KTA1660. A 4.70 MAX D _ + D B 2.50 0.20 K C 1.70 MAX D 0.45+0.15/-0.10 F F E 4.25 MAX _ + F

KTC4377 SOT-89 TRANSISTOR (NPN) 1. BASE FEATURES Low voltage 2. COLLECTOR 1 2 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. EMITTER 3 Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 2 A PC Collector Power Dissipation 0.5 W TJ Junction Tempera

KTC4373 TRANSISTOR (NPN) SOT-89-3L FEATURES 1. BASE Small Flat Package High Voltage Application 2. COLLECTOR High Voltage 3. EMITTER High Transition Frequency MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current 800

KTC4375 TRANSISTOR (NPN) SOT-89 FEATURES 1. BASE Low voltage 2. COLLECTOR 1 2 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. EMITTER 3 Symbol Parameter Value Units VCBO 30 V Collector-Base Voltage VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.5 W TJ Junction Temp

KTC4374 TRANSISTOR (NPN) SOT-89-3L FEATURES 1. BASE Small Flat Package General Purpose Application 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current 400 mA PC Collector Power Dissipation 500 mW

KTC4379 TRANSISTOR (NPN) SOT-89 FEATURES 1. BASE Low saturation voltage High speed switching time 2. COLLECTOR 1 Complementary to KTA1666 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Con

KTC4378 TRANSISTOR (NPN) SOT-89 1. BASE FEATURES High voltage 2. COLLECTOR 1 2 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. EMITTER 3 Symbol Parameter Value Units VCBO 80 V Collector-Base Voltage VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1 A PC Collector Dissipation 0.5 W TJ Junction Temperature

KTC4372 TRANSISTOR (NPN) SOT-89-3L FEATURES Small Flat Package 1. BASE High Voltage Switching Application 2. COLLECTOR High Voltage High Transition Frequency 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Cur

KTC4375 SOT-89 Transistor(NPN) 1. BASE SOT-89 1 2. COLLECTOR 4.6 2 B 4.4 1.6 1.8 3. EMITTER 1.4 3 1.4 2.6 4.25 Features 2.4 3.75 0.8 Low voltage MIN 0.53 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 1.5 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.0 Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO 30 V Collector-Base Voltage

KTC4377 SOT-89 Transistor(NPN) 1. BASE 1 SOT-89 2. COLLECTOR 2 4.6 B 4.4 1.6 3. EMITTER 1.8 3 1.4 1.4 Features 2.6 4.25 2.4 3.75 Low voltage 0.8 MIN 0.53 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 MAXIMUM RATINGS (TA=25 unless otherwise noted) 1.5 3.0 Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 30 V VCEO C

KTC4378 SOT-89 Transistor(NPN) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 4.4 3. EMITTER 1.6 2 1.8 1.4 1.4 3 Features 2.6 4.25 2.4 3.75 High voltage 0.8 MIN 0.53 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 1.5 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.0 Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO 80 V Collector-Base Voltage

KTC4379 SOT-89 Transistor(NPN) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 2 4.4 3. EMITTER 1.6 1.8 1.4 1.4 3 Features 2.6 4.25 2.4 3.75 Low saturation voltage 0.8 MIN 0.53 High speed switching time 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 Complementary to KTA1666 1.5 3.0 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimete

KTC4377 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features SOT-89 * Low saturation voltage, VCE(sat) 0.5V@2A/50mA * Excellent DC current gain characteristics. Mechanical Data * Case Molded Plastic ABSOLUTE MAXIMUM RATINGS(Ta Rating Symbol Value Unit VCBO 30 V Collector-Base Voltage VCEO 10 V Collector-Emitter Voltage V

KTC4375 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 ABSOLUTE MAXIMUM RATINGS(Ta Rating Symbol Value Unit VCBO 30 V Collector-Base Voltage VCEO 30 V Collector-Emitter Voltage V VEBO 5 Emitter-Base Voltage IC Collector Current-Continuous 1.5 A PC 0.5 W Collector Power Disspation Junction Temperature TJ 150 C -55 to 150

KTC4379 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 ABSOLUTE MAXIMUM RATINGS(Ta Rating Symbol Value Unit VCBO 50 V Collector-Base Voltage VCEO 50 V Collector-Emitter Voltage V VEBO 5 Emitter-Base Voltage IC Collector Current-Continuous 2.0 A PC 0.5 W Collector Power Disspation Junction Temperature TJ 150 C -55 to 150

KTC4375 Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features , KTA1663 Small flat package, complementary to KTA1663. / Applications High current application. / Equivalent Circuit

SMD Type Transistors NPN Transistors KTC4373 1.70 0.1 Features High Voltage Switching Application High Voltage High Transition Frequency 0.42 0.1 0.46 0.1 Comlementary to KTA1661 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 120 V Em

SMD Type Transistors NPN Transistors KTC4375 1.70 0.1 Features Low voltage Comlementary to KTA1663 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 1.5 A Colle

DIP Type Transistors NPN Transistors KTC4370A Unit mm TO-220F 0.20 0.20 0.20 2.54 0.20 0.70 Features High Transition Frequency Complementary to KTA1659A 0.20 2.76 1.47max 0.20 0.50 0.20 0.80 1. Base 2.54typ 2. Collector 2.54typ 3. Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 1

SMD Type Transistors NPN Transistors KTC4379 1.70 0.1 Features Low saturation voltage High speed switching time Complementary to KTA1666 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 5 Co

SMD Type Transistors NPN Transistors KTC4378 1.70 0.1 Features High Voltage and High fT High Current Complementary to KTA1668 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCEO 60 V Emitter - Base Voltage VEBO 5 Collector Cur

SMD Type Transistors NPN Transistors KTC4372 1.70 0.1 Features High Voltage Switching Application High Voltage 0.42 0.1 High Transition Frequency 0.46 0.1 Comlementary to KTA1660 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 200 Collector - Emitter Voltage VCEO 150 V Emi

DIP Type Transistors NPN Transistors KTC4370 Unit mm TO-220F 0.20 0.20 0.20 2.54 0.20 0.70 Features High Transition Frequency Complementary to KTA1659 0.20 2.76 1.47max 0.20 0.50 0.20 0.80 1. Base 2.54typ 2. Collector 2.54typ 3. Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 160

KTC4375 NPN Plastic-Encapsulate Transistors Encapsulate Transistors FEATURES Low voltage MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit SOT-89 VCBO 30 V Collector-Base Voltage 1. BASE 2. COLLECTOR 3. EMITTER VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation

KTC4373Y NPN-General use transistor 1W 1A 80V Applications Can be used for switching and amplifying in various electrical and electronic equipments. SOT-89 4 Circuit MARKING 1 2 3 CY Max ratings Parameters Symbol Rating Unit VCEO 80 V Collector emitter voltage IB=0 VCBO 100 V Collector base voltage IE=0 VEBO 5 V Emitter base voltage IC=0 I

isc Silicon NPN Power Transistor KTC4370A DESCRIPTION High Collector-Emitter Breakdown Voltage V = 180V(Min) CEO Complement to Type KTA1659A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 180 V CBO

isc Silicon NPN Power Transistor KTC4370 DESCRIPTION High Collector-Emitter Breakdown Voltage V = 160V(Min) CEO Complement to Type KTA1659 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 160 V CBO