KTC9011 - описание и поиск аналогов

SEMICONDUCTOR KTC9011 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. B C FEATURE High Power Gain Gpe=29dB(Typ.) at f=10.7MHz. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D MAXIMUM RATING (Ta=25 ) D 0.45 E 1.00 CHARACTERISTIC SYMBOL RATING UNIT F 1.27 G 0.85 VCBO Collector-Base Voltage 35 V H 0

SEMICONDUCTOR KTC9011S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. E L B L FEATURE DIM MILLIMETERS High Power Gain Gpe=29dB(Typ.) at f=10.7MHz. _ A 2.93 0.20 + B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 MAXIMUM RATING (Ta=25 ) J 0.13+0.10/-0.05 K 0.00 0.10 CH

SEMICONDUCTOR KTC9014S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L FEATURES DIM MILLIMETERS _ + A 2.93 0.20 Excellent hFE Linearity B 1.30+0.20/-0.15 hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). C 1.30 MAX 2 3 D 0.40+0.15/-0.05 Low Noise NF=1dB(Typ.) at f=1kHz. E 2.40+0.30/-0.20 1 G 1.90 Complementary to KTC9

SEMICONDUCTOR KTC9018 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. B C FEATURES Small Reverse Transfer Capacitance Cre=0.65pF(Typ.). N DIM MILLIMETERS Low Noise Figure NF=2.2dB(Typ.) at f=100MHz. A 4.70 MAX E K B 4.80 MAX High Transition Frequency fT=800MHz(Typ.). G C 3.70 MAX D D 0.45

SEMICONDUCTOR KTC9012 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Excellent hFE Linearity. Complementary to KTC9013. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 MAXIMUM RATING (Ta=25 ) F 1.27 G 0.85 CHARACTERISTIC SYMBOL RATING UNIT H 0.45 _ H J 14.00 + 0.50 VCBO -40

SEMICONDUCTOR KTC9015S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L FEATURES DIM MILLIMETERS Excellent hFE Linearity _ + A 2.93 0.20 B 1.30+0.20/-0.15 hFE(IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.). C 1.30 MAX 2 3 D 0.40+0.15/-0.05 Low Noise NF=1dB(Typ.) at f=1kHz. E 2.40+0.30/-0.20 Complementary to KTC9014S. 1

SEMICONDUCTOR KTC9015SC TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Excellent hFE Linearity hFE(IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.). Complementary to KTC9014SC. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO -70 V Collector-Base Voltage VCEO -50 V Collector-Emitter Voltage VEBO Emitter-Base Vo

SEMICONDUCTOR KTC9016 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. B C FEATURES Small Reverse Transfer Capacitance Cre=0.65pF(Typ.). N DIM MILLIMETERS Low Noise Figure NF=2.2dB(Typ.) at f=100MHz. A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 MAXIMUM RATING (Ta=25

SEMICONDUCTOR KTC9014SC TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Excellent hFE Linearity hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). Complementary to KTC9015SC. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltag

SEMICONDUCTOR KTC9014A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Excellent hFE Linearity hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). N DIM MILLIMETERS Low Noise NF=1dB(Typ.) at f=1kHz. A 4.70 MAX E K B 4.80 MAX Complementary to KTC9015A. G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 _ MAXIMUM RA

SEMICONDUCTOR KTC9013 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Excellent hFE Linearity. Complementary to KTC9012. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 MAXIMUM RATING (Ta=25 ) F 1.27 G 0.85 CHARACTERISTIC SYMBOL RATING UNIT H 0.45 _ H J 14.00 + 0.50 VCBO Collect

SEMICONDUCTOR KTC9016S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. E L B L FEATURES DIM MILLIMETERS Small Reverse Transfer Capacitance _ A 2.93 0.20 + B 1.30+0.20/-0.15 Cre=0.65pF(Typ.). C 1.30 MAX 2 Low Noise Figure NF=2.2dB(Typ.) at f=100MHz. 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1

SEMICONDUCTOR KTC9012S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L FEATURES DIM MILLIMETERS _ Excellent hFE Linearity. + A 2.93 0.20 B 1.30+0.20/-0.15 Complementary to KTC9013S. C 1.30 MAX 2 3 D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 0.10 Q MAXIMUM RATING (Ta=25 )

SEMICONDUCTOR KTC9012SC TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Excellent hFE Linearity. Complementary to KTC9013SC. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO -40 V Collector-Base Voltage VCEO -30 V Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Collector Current -500 mA

SEMICONDUCTOR KTC9018S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. E L B L FEATURES DIM MILLIMETERS Small Reverse Transfer Capacitance _ A 2.93 0.20 + B 1.30+0.20/-0.15 Cre=0.65pF(Typ.). C 1.30 MAX 2 Low Noise Figure NF=2.2dB(Typ.) at f=100MHz. 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 High Tran

SEMICONDUCTOR KTC9015A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Excellent hFE Linearity hFE(IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.). N DIM MILLIMETERS Low Noise NF=1dB(Typ.) at f=1kHz. A 4.70 MAX E K B 4.80 MAX Complementary to KTC9014A. G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 _ MAXIMUM

SEMICONDUCTOR KTC9013SC TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L FEATURES Excellent hFE Linearity. Complementary to KTC9012SC. DIM MILLIMETERS _ + A 2.90 0.1 2 3 B 1.30+0.20/-0.15 C 1.30 MAX 1 D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 G 1.90 MAXIMUM RATING (Ta=25 ) J 0.10 K 0.00 0.10 CHARACTERISTIC SYMBO

SEMICONDUCTOR KTC9013S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L FEATURES DIM MILLIMETERS _ + Excellent hFE Linearity. A 2.93 0.20 B 1.30+0.20/-0.15 Complementary to KTC9012S. C 1.30 MAX 2 3 D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 0.10 Q MAXIMUM RATING (Ta=25 ) L