KTD1302 - описание и поиск аналогов

SEMICONDUCTOR KTD1302 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR AUDIO MUTING APPLICATION. B C FEATURES High Emitter-Base Voltage VEBO=12V(Min.). High Reverse hFE Reverse hFE=20(Min.) (VCE=2V, IC=4mA). N DIM MILLIMETERS Low on Resistance RON=0.6 (Typ.) (IB=1mA). A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 MAXIMUM RATING (Ta=25 ) H 0.45

KTD1302 TRANSISTOR (NPN) SOT-89-3L FEATURES 1. BASE Small Flat Package Audio Muting Application 2. COLLECTOR High Emitter-Base Voltage 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 12 V IC Collector Current 300 mA PC Collector

SMD Type Transistors NPN Transistors KTD1302 1.70 0.1 Features Small Flat Package Audio Muting Application 0.42 0.1 0.46 0.1 High Emitter-Base Voltage 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VEBO 12 Colle

KTD1304 0.3 A, 25 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES High emitter-base voltage VEBO=12V(Min) low on resistance Ron=0.6 (max)(IB=1mA) PACKAGE DIMENSIONS SOT-23 Collector 3 Dim Min Max A 2.800 3.040 1 Base B 1.200 1.400 2 Emitter C 0.890 1.110 D

SEMICONDUCTOR KTD1303 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR AUDIO MUTING APPLICATION. FEATURES B High Emitter-Base Voltage VEBO=12V(Min.). High Reverse hFE Reverse hFE=20(Min.) (VCE=2V, IC=4mA). DIM MILLIMETERS O A 3.20 MAX Low on Resistance RON=0.6 (Typ.) (IB=1mA). H M B 4.30 MAX C 0.55 MAX _ D 2.40 + 0.15 E 1.27 F 2.30 C _ + G 14.00 0.50 H 0.60 MAX

SEMICONDUCTOR KTD1304 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR AUDIO MUTING APPLICATION. FEATURES E L B L High Emitter-Base Voltage VEBO=12V(Min.). DIM MILLIMETERS High Reverse hFE _ + A 2.93 0.20 B 1.30+0.20/-0.15 Reverse hFE=20(Min.) (VCE=2V, IC=4mA). C 1.30 MAX 2 3 D 0.40+0.15/-0.05 Low on Resistance RON=0.6 (Max.) (IB=1mA). E 2.40+0.30/-0.20 1 G 1.90

KTD1304 SOT-23 TRANSISTOR (NPN) FEATURES High emitter-base voltage 1. BASE low on resistance 2. EMITTER 3.COLLECTOR MARKING MAX MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 12 V IC Collector Current -Continuous 0.3 A PC Collector

KTD1304 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3.COLLECTOR Features High emitter-base voltage VEBO=12V(Min) low on resistance Ron=0.6 (max)(IB=1mA) MARKING MAX Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 20 V VEBO Emit

KTD1304 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 3 1 2 SOT-23 ABSOLUTE MAXIMUM RATINGS(Ta Rating Symbol Value Unit VCBO 25 V Collector-Base Voltage VCEO 20 V Collector-Emitter Voltage V VEBO 12 Emitter-Base Voltage IC Collector Current-Continuous 0.3 A PC 0.2 W Collector Power Disspation Junction Temperature TJ 150 C -55 - 150 Storage Temperature Tstg C WE

SMD Type Transistors NPN Transistors KTD1304 (KTD1304S) SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 3 Features High Emitter-Base Voltage VEBO = 12V(Min) High Reverse hFE 1 2 +0.02 +0.1 Low on Resistance 0.15 -0.02 0.95 -0.1 +0.1 1.9-0.2 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector -

SMD Type Transistors NPN Transistors KTD1304 (KTD1304S) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 Features 3 High Emitter-Base Voltage VEBO = 12V(Min) High Reverse hFE Low on Resistance 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Vo