2N4236 - описание и поиск аналогов

Boca Semiconductor corp. bocasemi.com http //www.bocasemi.com http //www.bocasemi.com http //www.bocasemi.com http //www.bocasemi.com

"2N4236X" 2N4236X Dimensions in mm (inches). Bipolar PNP Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 80V dia. IC = 3A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed p

TM 2N4237 Central 2N4238 Semiconductor Corp. 2N4239 NPN SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR 2N4237, 2N4238, and 2N4239 are Silicon NPN Transistors, in a hermetically sealed metal case designed for power amplifier, power driver and switching power supply applications. JEDEC TO-39 CASE MAXIMUM RATINGS (TC=25 C unless otherwise noted) SYMBOL 2N4237 2N4238 2N

Boca Semicondcutor Corp. bocasemi.com http //www.bocasemi.com http //www.bocasemi.com http //www.bocasemi.com

A Boca Semiconductor Corp. BSC http //www.bocasemi.com A Boca Semiconductor Corp. BSC http //www.bocasemi.com A Boca Semiconductor Corp. BSC http //www.bocasemi.com A Boca Semiconductor Corp. BSC http //www.bocasemi.com

Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company PNP SILICON PLANAR TRANSISTORS 2N4234, 2N4235 2N4236 TO-39 Metal Can Package General Purpose Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N4234 2N4235 2N4236 UNIT VCEO Collector Emitter Voltage 40 60 80 V VCBO Collector Base Voltage 40 60 80 V VEBO Emitter Base Voltage 7.0 V IB Base Curr

isc Silicon NPN Power Transistor 2N4231 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for general-purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

isc Silicon NPN Power Transistor 2N4232A DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for general-purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

isc Silicon NPN Power Transistor 2N4233A DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for general-purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE