MG100H1AL2. Аналоги и основные параметры
Наименование производителя: MG100H1AL2
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 600 W
Макcимально допустимое напряжение коллектор-база (Ucb): 600 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 450 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 100 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Ёмкость коллекторного перехода (Cc): 1000 pf
Статический коэффициент передачи тока (hFE): 100
Корпус транзистора: X99
Аналоги (замена) для MG100H1AL2
- подборⓘ биполярного транзистора по параметрам
MG100H1AL2 даташит
mmg100h120h6hn.pdf
MMG100H120H6HN 1200V 100A Four-Pack Module May 2015 Preliminary RoHS Compliant PRODUCT FEATURES IGBT CHIP(T4 Fast Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switchin
mmg100hb060h6en.pdf
MMG100HB060H6EN 600V 100A Four-Pack Module May 2015 Version 01 RoHS Compliant PRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses
mmg100hb060b6en.pdf
MMG100HB060B6EN 600V 100A IGBT Module February 2017 Version 2 RoHS Compliant PRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses
mmg100hb120h6hn.pdf
MMG100HB120H6HN 1200V 100A Four-Pack Module May 2015 Version 01 RoHS Compliant PRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switchin
Другие транзисторы: ME9021, ME9022, MF1161, MF1162, MF1163, MF1164, MF3304, MG100G1FL1, BC546, MG100H2DL1, MG15G1AL3, MG15G6EL1, MG200H1AL1, MG30G1BL2, MG30G2CL3, MG50G1BL2, MG50G2CL3
History: EW53-2 | F118 | ETP5095 | 2SA1359O | 2SA1364 | 2SA1360O | 2SA1548
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Список транзисторов
Обновления
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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