Биполярный транзистор MG100H2DL1 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MG100H2DL1
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 400 W
Макcимально допустимое напряжение коллектор-база (Ucb): 600 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 550 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 100 A
Предельная температура PN-перехода (Tj): 150 °C
Ёмкость коллекторного перехода (Cc): 800 pf
Статический коэффициент передачи тока (hfe): 80
Корпус транзистора: X99
Аналоги (замена) для MG100H2DL1
MG100H2DL1 Datasheet (PDF)
mmg100hb060h6en.pdf
MMG100HB060H6EN600V 100A Four-Pack ModuleMay 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses
mmg100h120h6hn.pdf
MMG100H120H6HN1200V 100A Four-Pack ModuleMay 2015 Preliminary RoHS CompliantPRODUCT FEATURES IGBT CHIP(T4 Fast Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switchin
mmg100hb060b6en.pdf
MMG100HB060B6EN600V 100A IGBT ModuleFebruary 2017 Version 2 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses
mmg100hb120h6hn.pdf
MMG100HB120H6HN1200V 100A Four-Pack ModuleMay 2015 Version 01 RoHS CompliantPRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switchin
mg100hf12mrc1.pdf
MG100HF12MRC1 RoHS COMPLIANT IGBT Modules VCES 1200V IC 100A Applications Industrial Inverters Servo Applications SMPS UPS Induction Heating Circuit Features Short Circuit Rated 10s Low Stray Inductance Low Saturation Voltage Ultra Low loss HI-REL Power Terminals Lead Free, Compliant With RoHS Requirement Absolute
mg100hf12mic1.pdf
PRELIMINARY MG100HF12MIC1 RoHS COMPLIANT IGBT Modules VCES 1200V IC 100A Applications High frequency switching application Medical applications Motion/servo control UPS systems Features Circuit High short circuit capability, self limiting short circuit current IGBT CHIP (Trench+Field Stop technology) VCE(sat) with positive temperature coef
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2N5410
History: 2N5410
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050