isc Silicon NPN Darlington Power Transistor MJ11012DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 60V(Min.)(BR)CEOHigh DC Current Gain-: h = 1000(Min.)@I = 20AFE CLow Collector Saturation Voltage-: V = 3.0V(Max.)@ I = 20ACE (sat) CComplement to the PNP MJ11011Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS

Order this documentMOTOROLAby MJ11012/DSEMICONDUCTOR TECHNICAL DATAPNPMJ11013High-Current ComplementaryMJ11015Silicon TransistorsNPNMJ11012. . . for use as output devices in complementary general purpose amplifier applica-tions. High DC Current Gain hFE = 1000 (Min) @ IC 20 AdcMJ11014 Monolithic Construction with Builtin Base Emitter Shunt Resistor

MJ11015 (PNP); MJ11012,MJ11016 (NPN)MJ11016 is a Preferred DeviceHigh-CurrentComplementary SiliconTransistorshttp://onsemi.com. . . for use as output devices in complementary general purposeamplifier applications.30 AMPERE DARLINGTON High DC Current Gain - POWER TRANSISTORShFE = 1000 (Min) @ IC - 20 AdcCOMPLEMENTARY SILICON Monolithic Construction with Built-in

Order this documentMOTOROLAby MJ11017/DSEMICONDUCTOR TECHNICAL DATAPNPMJ11017Complementary DarlingtonMJ11021*Silicon Power TransistorsNPN. . . designed for use as general purpose amplifiers, low frequency switching andMJ11018*motor control applications. High dc Current Gain @ 10 Adc hFE = 400 Min (All Types)MJ11022 CollectorEmitter Sustaining Voltage

MJ11015 (PNP); MJ11012,MJ11016 (NPN)MJ11016 is a Preferred DeviceHigh-CurrentComplementary SiliconTransistorshttp://onsemi.com. . . for use as output devices in complementary general purposeamplifier applications.30 AMPERE DARLINGTON High DC Current Gain - POWER TRANSISTORShFE = 1000 (Min) @ IC - 20 AdcCOMPLEMENTARY SILICON Monolithic Construction with Built-in

MJ11015 (PNP); MJ11012,MJ11016 (NPN)MJ11016 is a Preferred DeviceHigh-CurrentComplementary SiliconTransistorshttp://onsemi.com. . . for use as output devices in complementary general purposeamplifier applications.30 AMPERE DARLINGTON High DC Current Gain - POWER TRANSISTORShFE = 1000 (Min) @ IC - 20 AdcCOMPLEMENTARY SILICON Monolithic Construction with Built-in

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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyMJ11015 PNPSILICON PLANAR DARLINGTON POWER TRANSISTORSMJ11016 NPNMetal Can PackageTO-3Designed for use as Output Devices in Complementary General Purpose Amplifier Applications.ABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL VALUE UNITSCollector Base Voltage VCBO V120Collector

isc Silicon PNP Darlington Power Transistor MJ11017DESCRIPTIONHigh DC Current Gain-: h = 400(Min)@ I = -10AFE CCollector-Emitter Sustaining Voltage-: V = -150V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = -2.0V(Max)@ I = -10ACE(sat) C= -3.4V(Max)@ I = -15ACComplement to the NPN MJ11018Minimum Lot-to-Lot variations for robust deviceperformanc

isc Silicon NPN Darlington Power Transistor MJ11018DESCRIPTIONCollector-Emitter Sustaining Voltage: V = 150V (Min.)CEO(SUS)High DC Current Gain-: h = 400(Min.)@I = 10AFE CLow Collector Saturation Voltage-: V = 1.0V(Max.)@ I = 5.0ACE (sat) CComplement to the PNP MJ11017Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATI

isc Silicon PNP Darlington Power Transistor MJ11013DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -90V(Min.)(BR)CEOHigh DC Current Gain-: h = 1000(Min.)@I = -20AFE CLow Collector Saturation Voltage-: V = -3.0V(Max.)@ I = -20ACE (sat) CComplement to the NPN MJ11014Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICAT

isc Silicon PNP Darlington Power Transistor MJ11019DESCRIPTIONHigh DC Current GainLow Collector-Emitter Saturation VoltageComplement to the NPN MJ11020100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifiers ,low frequencyswitching and motor control applications.ABS

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor MJ11016 DESCRIPTION Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min.) High DC Current Gain- : hFE= 1000(Min.)@IC= 20A Low Collector Saturation Voltage- : VCE (sat)= 3.0V(Max.)@ IC= 20A Complement to Type MJ11015 APPLICATIONS Designed for use as output devices

isc Silicon PNP Darlington Power Transistor MJ11015DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min.)(BR)CEOHigh DC Current Gain-: h = 1000(Min.)@I = -20AFE CLow Collector Saturation Voltage-: V = -3.0V(Max.)@ I = -20ACE (sat) CComplement to the NPN MJ11016Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICA

isc Silicon NPN Darlington Power Transistor MJ11014DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 90V(Min.)(BR)CEOHigh DC Current Gain-: h = 1000(Min.)@I = 20AFE CLow Collector Saturation Voltage-: V = 3.0V(Max.)@ I = 20ACE (sat) CComplement to the PNP MJ11013Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS

isc Silicon PNP Darlington Power Transistor MJ11011DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -60V(Min.)(BR)CEOHigh DC Current Gain-: h = 1000(Min.)@I = -20AFE CLow Collector Saturation Voltage-: V = -3.0V(Max.)@ I = -20ACE (sat) CComplement to NPN Type MJ11012Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICAT