MJ11013 - описание и поиск аналогов

isc Silicon PNP Darlington Power Transistor MJ11013 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -90V(Min.) (BR)CEO High DC Current Gain- h = 1000(Min.)@I = -20A FE C Low Collector Saturation Voltage- V = -3.0V(Max.)@ I = -20A CE (sat) C Complement to the NPN MJ11014 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICAT

Order this document MOTOROLA by MJ11017/D SEMICONDUCTOR TECHNICAL DATA PNP MJ11017 Complementary Darlington MJ11021* Silicon Power Transistors NPN . . . designed for use as general purpose amplifiers, low frequency switching and MJ11018* motor control applications. High dc Current Gain @ 10 Adc hFE = 400 Min (All Types) MJ11022 Collector Emitter Sustaining Voltage

Order this document MOTOROLA by MJ11012/D SEMICONDUCTOR TECHNICAL DATA PNP MJ11013 High-Current Complementary MJ11015 Silicon Transistors NPN MJ11012 . . . for use as output devices in complementary general purpose amplifier applica- tions. High DC Current Gain hFE = 1000 (Min) @ IC 20 Adc MJ11014 Monolithic Construction with Built in Base Emitter Shunt Resistor

MJ11015 (PNP); MJ11012, MJ11016 (NPN) MJ11016 is a Preferred Device High-Current Complementary Silicon Transistors http //onsemi.com . . . for use as output devices in complementary general purpose amplifier applications. 30 AMPERE DARLINGTON High DC Current Gain - POWER TRANSISTORS hFE = 1000 (Min) @ IC - 20 Adc COMPLEMENTARY SILICON Monolithic Construction with Built-in

MJ11015 (PNP); MJ11012, MJ11016 (NPN) MJ11016 is a Preferred Device High-Current Complementary Silicon Transistors http //onsemi.com . . . for use as output devices in complementary general purpose amplifier applications. 30 AMPERE DARLINGTON High DC Current Gain - POWER TRANSISTORS hFE = 1000 (Min) @ IC - 20 Adc COMPLEMENTARY SILICON Monolithic Construction with Built-in

MJ11015 (PNP); MJ11012, MJ11016 (NPN) MJ11016 is a Preferred Device High-Current Complementary Silicon Transistors http //onsemi.com . . . for use as output devices in complementary general purpose amplifier applications. 30 AMPERE DARLINGTON High DC Current Gain - POWER TRANSISTORS hFE = 1000 (Min) @ IC - 20 Adc COMPLEMENTARY SILICON Monolithic Construction with Built-in

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company MJ11015 PNP SILICON PLANAR DARLINGTON POWER TRANSISTORS MJ11016 NPN Metal Can Package TO-3 Designed for use as Output Devices in Complementary General Purpose Amplifier Applications. ABSOLUTE MAXIMUM RATINGS (Ta=25 C) DESCRIPTION SYMBOL VALUE UNITS Collector Base Voltage VCBO V 120 Collector

isc Silicon PNP Darlington Power Transistor MJ11017 DESCRIPTION High DC Current Gain- h = 400(Min)@ I = -10A FE C Collector-Emitter Sustaining Voltage- V = -150V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = -2.0V(Max)@ I = -10A CE(sat) C = -3.4V(Max)@ I = -15A C Complement to the NPN MJ11018 Minimum Lot-to-Lot variations for robust device performanc

isc Silicon NPN Darlington Power Transistor MJ11018 DESCRIPTION Collector-Emitter Sustaining Voltage V = 150V (Min.) CEO(SUS) High DC Current Gain- h = 400(Min.)@I = 10A FE C Low Collector Saturation Voltage- V = 1.0V(Max.)@ I = 5.0A CE (sat) C Complement to the PNP MJ11017 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATI

isc Silicon PNP Darlington Power Transistor MJ11019 DESCRIPTION High DC Current Gain Low Collector-Emitter Saturation Voltage Complement to the NPN MJ11020 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifiers ,low frequency switching and motor control applications. ABS

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor MJ11016 DESCRIPTION Collector-Emitter Breakdown Voltage- V(BR)CEO= 120V(Min.) High DC Current Gain- hFE= 1000(Min.)@IC= 20A Low Collector Saturation Voltage- VCE (sat)= 3.0V(Max.)@ IC= 20A Complement to Type MJ11015 APPLICATIONS Designed for use as output devices

isc Silicon PNP Darlington Power Transistor MJ11015 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min.) (BR)CEO High DC Current Gain- h = 1000(Min.)@I = -20A FE C Low Collector Saturation Voltage- V = -3.0V(Max.)@ I = -20A CE (sat) C Complement to the NPN MJ11016 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICA

isc Silicon NPN Darlington Power Transistor MJ11014 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 90V(Min.) (BR)CEO High DC Current Gain- h = 1000(Min.)@I = 20A FE C Low Collector Saturation Voltage- V = 3.0V(Max.)@ I = 20A CE (sat) C Complement to the PNP MJ11013 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

isc Silicon NPN Darlington Power Transistor MJ11012 DESCRIPTION Collector-Emitter Breakdown Voltage V = 60V(Min.) (BR)CEO High DC Current Gain- h = 1000(Min.)@I = 20A FE C Low Collector Saturation Voltage- V = 3.0V(Max.)@ I = 20A CE (sat) C Complement to the PNP MJ11011 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

isc Silicon PNP Darlington Power Transistor MJ11011 DESCRIPTION Collector-Emitter Breakdown Voltage V = -60V(Min.) (BR)CEO High DC Current Gain- h = 1000(Min.)@I = -20A FE C Low Collector Saturation Voltage- V = -3.0V(Max.)@ I = -20A CE (sat) C Complement to NPN Type MJ11012 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICAT