isc Silicon PNP Darlington Power Transistor MJ11019DESCRIPTIONHigh DC Current GainLow Collector-Emitter Saturation VoltageComplement to the NPN MJ11020100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifiers ,low frequencyswitching and motor control applications.ABS

Order this documentMOTOROLAby MJ11017/DSEMICONDUCTOR TECHNICAL DATAPNPMJ11017Complementary DarlingtonMJ11021*Silicon Power TransistorsNPN. . . designed for use as general purpose amplifiers, low frequency switching andMJ11018*motor control applications. High dc Current Gain @ 10 Adc hFE = 400 Min (All Types)MJ11022 CollectorEmitter Sustaining Voltage

Order this documentMOTOROLAby MJ11012/DSEMICONDUCTOR TECHNICAL DATAPNPMJ11013High-Current ComplementaryMJ11015Silicon TransistorsNPNMJ11012. . . for use as output devices in complementary general purpose amplifier applica-tions. High DC Current Gain hFE = 1000 (Min) @ IC 20 AdcMJ11014 Monolithic Construction with Builtin Base Emitter Shunt Resistor

MJ11015 (PNP); MJ11012,MJ11016 (NPN)MJ11016 is a Preferred DeviceHigh-CurrentComplementary SiliconTransistorshttp://onsemi.com. . . for use as output devices in complementary general purposeamplifier applications.30 AMPERE DARLINGTON High DC Current Gain - POWER TRANSISTORShFE = 1000 (Min) @ IC - 20 AdcCOMPLEMENTARY SILICON Monolithic Construction with Built-in

MJ11015 (PNP); MJ11012,MJ11016 (NPN)MJ11016 is a Preferred DeviceHigh-CurrentComplementary SiliconTransistorshttp://onsemi.com. . . for use as output devices in complementary general purposeamplifier applications.30 AMPERE DARLINGTON High DC Current Gain - POWER TRANSISTORShFE = 1000 (Min) @ IC - 20 AdcCOMPLEMENTARY SILICON Monolithic Construction with Built-in

MJ11015 (PNP); MJ11012,MJ11016 (NPN)MJ11016 is a Preferred DeviceHigh-CurrentComplementary SiliconTransistorshttp://onsemi.com. . . for use as output devices in complementary general purposeamplifier applications.30 AMPERE DARLINGTON High DC Current Gain - POWER TRANSISTORShFE = 1000 (Min) @ IC - 20 AdcCOMPLEMENTARY SILICON Monolithic Construction with Built-in

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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyMJ11015 PNPSILICON PLANAR DARLINGTON POWER TRANSISTORSMJ11016 NPNMetal Can PackageTO-3Designed for use as Output Devices in Complementary General Purpose Amplifier Applications.ABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL VALUE UNITSCollector Base Voltage VCBO V120Collector

isc Silicon PNP Darlington Power Transistor MJ11017DESCRIPTIONHigh DC Current Gain-: h = 400(Min)@ I = -10AFE CCollector-Emitter Sustaining Voltage-: V = -150V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = -2.0V(Max)@ I = -10ACE(sat) C= -3.4V(Max)@ I = -15ACComplement to the NPN MJ11018Minimum Lot-to-Lot variations for robust deviceperformanc

isc Silicon NPN Darlington Power Transistor MJ11018DESCRIPTIONCollector-Emitter Sustaining Voltage: V = 150V (Min.)CEO(SUS)High DC Current Gain-: h = 400(Min.)@I = 10AFE CLow Collector Saturation Voltage-: V = 1.0V(Max.)@ I = 5.0ACE (sat) CComplement to the PNP MJ11017Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATI

isc Silicon PNP Darlington Power Transistor MJ11013DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -90V(Min.)(BR)CEOHigh DC Current Gain-: h = 1000(Min.)@I = -20AFE CLow Collector Saturation Voltage-: V = -3.0V(Max.)@ I = -20ACE (sat) CComplement to the NPN MJ11014Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICAT

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor MJ11016 DESCRIPTION Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min.) High DC Current Gain- : hFE= 1000(Min.)@IC= 20A Low Collector Saturation Voltage- : VCE (sat)= 3.0V(Max.)@ IC= 20A Complement to Type MJ11015 APPLICATIONS Designed for use as output devices

isc Silicon PNP Darlington Power Transistor MJ11015DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min.)(BR)CEOHigh DC Current Gain-: h = 1000(Min.)@I = -20AFE CLow Collector Saturation Voltage-: V = -3.0V(Max.)@ I = -20ACE (sat) CComplement to the NPN MJ11016Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICA

isc Silicon NPN Darlington Power Transistor MJ11014DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 90V(Min.)(BR)CEOHigh DC Current Gain-: h = 1000(Min.)@I = 20AFE CLow Collector Saturation Voltage-: V = 3.0V(Max.)@ I = 20ACE (sat) CComplement to the PNP MJ11013Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS

isc Silicon NPN Darlington Power Transistor MJ11012DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 60V(Min.)(BR)CEOHigh DC Current Gain-: h = 1000(Min.)@I = 20AFE CLow Collector Saturation Voltage-: V = 3.0V(Max.)@ I = 20ACE (sat) CComplement to the PNP MJ11011Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS

isc Silicon PNP Darlington Power Transistor MJ11011DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -60V(Min.)(BR)CEOHigh DC Current Gain-: h = 1000(Min.)@I = -20AFE CLow Collector Saturation Voltage-: V = -3.0V(Max.)@ I = -20ACE (sat) CComplement to NPN Type MJ11012Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICAT